Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

2002 ◽  
Vol 744 ◽  
Author(s):  
J.S. Huang ◽  
T. Nguyen ◽  
N. Bar-Chaim ◽  
C.B. Vartuli ◽  
S. Anderson ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermal Annealing ◽  
Interfacial Reaction ◽  
Rapid Thermal Annealing ◽  
Phase Changes ◽  
Long Wavelength ◽  
Transmission Electron ◽  
Resistance Reduction ◽  
Scanning Transmission ◽  
Metallic Compounds

ABSTRACTWe studied the influence of n-metal alloy on the long wavelength InP device performance. Various alloy schemes of rapid thermal annealing (RTA) were experimented to obtain the optimized contact resistance for the n-InP/AuGe/Ni/Au/Cr/Au metallization systems. Significant resistance reduction was achieved at 390°C for 45sec with wafer flattening step at 310°C. Using scanning transmission electron microscopy (STEM) and Auger electron spectroscopy (AES) analyses, we showed that resistance was correlated with interfacial reaction at the n-InP/metal. For the high resistance devices, little interfacial reaction between n-InP and Au occurred. For the low resistance devices, significant out-diffusion of P in the bottom Au and Ni layers occurred, forming Au-P and Ni-P metallic compounds. In addition, accumulation of Ge in the Ni layer was also detected. We suggest that Ni-P is very critical in obtaining low contact resistance for n-InP.

Correlation of resistance and interfacial reaction of contacts to n-type InP

2002 ◽  
Vol 17 (11) ◽  
pp. 2929-2934 ◽  
Author(s):  
J. S. Huang ◽  
C. B. Vartuli ◽  
T. Nguyen ◽  
N. Bar-Chaim ◽  
J. Shearer ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Compound Semiconductors ◽  
Metal Contact ◽  
Chemical Information ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Metallic Compounds

Metal contact of compound semiconductors has been extensively studied using various characterization tools. However, there was little work of scanning transmission electron microscopy (STEM) done previously for the study of the InP contact systems. Using STEM and Auger electron spectroscopy analyses, we correlated the resistance with interfacial reactions in the AuGe/Ni/Au/Cr/Au contacts to n-InP. Detailed nanoscale structural and chemical information was uniquely revealed by the STEM compared to other techniques. For the high-resistance samples, little interfacial reaction between n-InP and Au occurred. For the low-resistance samples, significant out-diffusion of P in the Au and Ni layers occurred, forming Au–P and Ni–P metallic compounds. Accumulation of Ge in the Ni layer was also detected. We suggest that Ni–P may be very critical in obtaining low contact resistance for n-InP.

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Dopant Incorporation of Boron Implanted Silicon During Rapid Thermal Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
Hung-Yu Liu Hung-Yu Liu ◽  
Peng-Heng Chang Peng-Heng Chang
Keyword(s):  
Surface Layer ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Compressive Strain ◽  
Ion Energy ◽  
X Ray ◽  
Silicon Crystals ◽  
Dopant Incorporation ◽  
Transmission Electron ◽  
Fitting Procedures

ABSTRACTSurface layer damage of boron implanted (100) silicon crystals were characterized by x-ray rocking curves using computer fitting procedures. The implantation was carried out at ion energy of 130 KeV with the dose of 1*1016 atoms/cm2. The in-depth strain distribution of the surface layer after rapid thermal annealing was discussed based on x-ray rocking curve observation. It is clearly revealed that the strain profile reverses completely from the positive (tensile) strain in the as-implanted condition to the negative (compressive) strain after annealing. This change is ascribed to the incorporation of boron atoms from interstitial sites to substitutional positions. The results were also compared with transmission electron microscopy (TEM) observations.

scholarly journals A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

2015 ◽  
Vol 821-823 ◽  
pp. 432-435 ◽  
Author(s):  
Tony Abi-Tannous ◽  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Mihai Lazar ◽  
Berangère Toury ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Specific Contact Resistance ◽  
Free Sample ◽  
Elemental Analyses ◽  
Specific Contact ◽  
P Type ◽  
Al Oxide

In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Annealing (RTA) furnace. Structural analyses reveal the formation of epitaxial hexagonal Ti3SiC2 (0001) oriented. Elemental analyses show that high amount of Al and O elements are present inside the deposit. Obviously, the formation of Ti3SiC2 is accompanied by parasitic Al oxide, probably due to some unwanted oxygen residual in the RTA chamber. By using proper backing steps before the annealing, the deposit is not anymore composed of only Ti3SiC2 but accompanied with other compounds (Al3Ti, and Al). On the oxide-free sample, the specific contact resistance ρc of the Ti3SiC2 based contact on p-type 4H-SiC (having Na= 2×1019 cm-3) was measured to be as low as 6×10-5 Ω.cm2.

Epitaxial Growth of Near Noble Silicides on (111)Si by Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen
Keyword(s):  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Vacuum Method ◽  
Comparable Quality

AbstractThe epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

Direct Silicidation of Co on Si by Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
M. Tabasky ◽  
E. S. Bulat ◽  
B. M. Ditchek ◽  
M. A. Sullivan ◽  
S. Shatas
Keyword(s):  
Contact Resistance ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cobalt Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Resistivity ◽  
Dopant Redistribution

ABSTRACTRapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

Epitaxial Phase Formation of FeSi2 in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing

1992 ◽  
Vol 279 ◽  
Author(s):  
X. W. Lin ◽  
M. Behar ◽  
J. Desimoni ◽  
H. Bemas ◽  
W. Swider ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Crystallization Process ◽  
Ion Irradiation ◽  
Implantation Dose ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Fe Ions ◽  
Different Doses

ABSTRACTSi (001) wafers were implanted at room temperature with 50-keV Fe ions to different doses and subsequently crystallized either by rapid thermal annealing (RTA) (900°C, 120 s) or by Si+ irradiation (500 keV, 320 °C). Transmission electron microscopy, as well as Rutherford backscattering and channeling, were used to study the phase formation of FeSi2 in Si. Depending on the implantation dose and the crystallization process, three phases of FeSi2 were produced. While RTA results in the formation of β-FeSi2, ion irradiation promotes the growth of either cubic FeSi2 phase for low implantation doses (< = 4 at.% Fe) or a-FeSi2 for high implantation doses (≈18 at.% Fe). All these phases of FeSi2 were found to grow epitaxially in the Si matrix and their orientation relationships relative to Si have been determined. The interfacial energy between FeSi2 and Si appears to be an important factor in determining the final structure of FeSi2.

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