Fabrication of Highly Porous and Pure Zinc Oxide Films Using Modified DC Magnetron Sputtering and Post-Oxidation

Porous films of metals and metal oxides exhibit larger surface areas and higher reactivities than those of dense films. Therefore, they have gained growing attention as potential materials for use in various applications. This study reports the use of a modified direct current magnetron sputtering method to form porous Zn-ZnO composite films, wherein a subsequent wet post-oxidation process is employed to fabricate pure porous ZnO films. The porous Zn-ZnO composite films were initially formed in clusters, and evaluation of their resulting properties allowed the optimal conditions to be determined. An oxygen ratio of 0.3% in the argon gas flow resulted in the best porosity, while a process pressure of 14 mTorr was optimal. Following deposition, porous ZnO films were obtained through rapid thermal annealing in the presence of water vapor, and the properties and porosities of the obtained films were analyzed. An oxidation temperature of 500 °C was optimal, with an oxidation time of 5 min giving a pure ZnO film with 26% porosity. Due to the fact that the films produced using this method are highly reliable, they could be employed in applications that require large specific surface areas, such as sensors, supercapacitors, and batteries.

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Effect of Zinc Oxide Films on Si Substrates Growth by Microwave Plasma Jet Sintering System

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.22.1 ◽

2013 ◽

Vol 22 ◽

pp. 1-8

Author(s):

Chun Hsi Su ◽

Chia Min Huang

Keyword(s):

Gas Flow ◽

Microwave Plasma ◽

Optical Emission ◽

Plasma Jet ◽

Zno Films ◽

X Ray Diffraction ◽

Si Substrates ◽

Plasma Energy ◽

Zinc Oxide Films ◽

Process Pressure

Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on Si (100) substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately N2 with a 10 sccm gas flow rate for a process pressure of 35 Torr and several power of 300W, 600W, 900W and 1200W applied power. Optical emission spectroscopic (OES) studies of N2 microwave plasmas, X-ray diffraction (XRD), Micro-Raman, and FESEM spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. The Zn2SiO4 peaks reveal an increase of the crystals dimensions with the increase of the E-field. Intensity of diffraction peak of ZnO films increases with increasing microwave powers in MPJSS.

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Low Temperature Deposition of Zinc Oxide Films

MRS Proceedings ◽

10.1557/proc-763-b5.16 ◽

2003 ◽

Vol 763 ◽

Author(s):

H. W. Lee ◽

Y. G. Wang ◽

S. P. Lau ◽

B. K. Tay

Keyword(s):

Zinc Oxide ◽

Carrier Concentration ◽

Vacuum Arc ◽

Zno Films ◽

Al Alloy ◽

Pure Zinc ◽

Zinc Oxide Films ◽

Alloy Target ◽

Temperature Deposition ◽

Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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Structural color and photocatalytic property of polyester fabrics coated with Ag/ZnO composite films

International Journal of Clothing Science and Technology ◽

10.1108/ijcst-09-2018-0112 ◽

2019 ◽

Vol 31 (4) ◽

pp. 487-494 ◽

Cited By ~ 2

Author(s):

Xiaohong Yuan ◽

Qufu Wei ◽

Huizhen Ke ◽

Zujian Huang ◽

Dongsheng Chen

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Composite Films ◽

Photocatalytic Property ◽

Zno Films ◽

Zno Film ◽

Polyester Fabrics ◽

Content Type ◽

Structural Colors ◽

The Relationship

Purpose The purpose of this paper is to prepare structural colors of fabrics coated with Silver/Zinc Oxide (Ag/ZnO) composite films by magnetron sputtering and analyze the relationship between the colors and the thickness of Zinc Oxide (ZnO) film in Ag/ZnO composite film and the photocatalytic property of the fabrics coated with Ag/ZnO composite film. Design/methodology/approach Ag/ZnO composite films deposited on polyester fabrics were prepared by magnetron sputtering technology. The structural colors of textiles coated with Ag/ZnO composite films and the relationship between the colors and Ag/ZnO composite films were analyzed, and the photocatalytic property of Ag/ZnO composite films was also discussed. Findings The results indicated that the colors varied with the thicknesses of the ZnO film in Ag/ZnO composite films. The reactive sputtering time of ZnO film was 5, 8, 10 and 14 min, respectively, and the colors of the corresponding fabrics were purple, blue, blue-green and yellow. Meanwhile, the polyester fabrics coated with Ag/ZnO composite films showed the excellent photocatalytic properties, and silver (Ag) films deposited under the ZnO films in Ag/ZnO composite films could also improve the photocatalytic activities of ZnO films, and the formaldehyde degradation rates was 77.5%, which was higher than the 69.9% for the fabrics coated only with the ZnO film. Originality/value The polyester fabrics coated with Ag/ZnO composite films not only created various structural colors using change the thicknesses of the ZnO film, but also achieved the multifuctionality, which will have a broad application prospect in textile fields.

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RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Research Letters in Materials Science ◽

10.1155/2007/26459 ◽

2007 ◽

Vol 2007 ◽

pp. 1-5 ◽

Cited By ~ 4

Author(s):

Chaoyang Li ◽

Mamoru Furuta ◽

Tokiyoshi Matsuda ◽

Takahiro Hiramatsu ◽

Hiroshi Furuta ◽

...

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thermal Annealing ◽

Annealing Temperature ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Zinc Oxide Films ◽

Deposition Power ◽

Comparison Measurements

Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to400∘C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from300∘C. When annealing temperature was higher than300∘C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over300∘Cwould contribute to the formation of high quality ZnO films.

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Influence of Argon/oxygen Ratio on Linear and Nonlinear Optical Properties of Copper Doped ZnO Films

Materials Science ◽

10.5755/j01.ms.26.2.21568 ◽

2019 ◽

Vol 26 (2) ◽

pp. 121-126

Author(s):

Xing WEN ◽

Yue HAN ◽

Cheng-Bao YAO ◽

Ke-Xin ZHANG ◽

Jin LI ◽

...

Keyword(s):

Thin Films ◽

Nonlinear Absorption ◽

Gas Flow ◽

Hexagonal Wurtzite Structure ◽

Zno Films ◽

X Ray Diffraction ◽

Flow Rates ◽

Doped Zno ◽

Diffraction Patterns ◽

Oxygen Ratio

Copper (Cu)-doped ZnO (CZO) films were grown by simultaneous direct current and radio frequency magnetron sputtering technique under the situation of different gas flow rates of Ar: O2 (1:1, 2:1 and 1:0). The X-ray diffraction patterns revealed the naturally polycrystalline ZnO films with the predominant reflection (002) peak, which referred to the hexagonal wurtzite structure toward c-axis. The elemental composition of thin films was analyzed by energy dispersive spectroscopy (EDS). The Cu concentrations in thin films increased with Ar ratio of up to 1:0. The EDS spectra of three kinds of elements indicate that Cu-doping has obvious and sophisticated effect on the chemical state of oxygen, but less effect on those of copper and zinc. Furthermore, the nonlinear absorption of CZO films was investigated by the way of Z-scan technique. These films demonstrated good nonlinear absorption behavior for the different gas flow rates of Ar: O2.

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X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

Powder Diffraction ◽

10.1154/1.2903496 ◽

2008 ◽

Vol 23 (S1) ◽

pp. S94-S97 ◽

Cited By ~ 3

Author(s):

G. Juárez-Díaz ◽

H. Solache-Carranco ◽

G. Romero-Paredes R. ◽

R. Peña-Sierra ◽

J. Martínez-Juárez ◽

...

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Zno Films ◽

Silicon Substrates ◽

Reactive Magnetron ◽

X Ray Diffraction ◽

X Ray ◽

Zinc Oxide Films ◽

Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

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Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O2/N2

Journal of Luminescence ◽

10.1016/j.jlumin.2013.09.029 ◽

2014 ◽

Vol 145 ◽

pp. 884-887 ◽

Cited By ~ 10

Author(s):

Wei-Min Cho ◽

Yow-Jon Lin ◽

Chia-Jyi Liu ◽

Liang-Ru Chen ◽

Yu-Tai Shih ◽

...

Keyword(s):

Magnetron Sputtering ◽

Gas Flow ◽

Compensation Effect ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Doped Zno ◽

Luminescence Behavior

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Oxygen Ratio Effect on Zinc Oxide Films Fabricated by Radio Frequency Magnetron Sputtering for Photoluminescence Type Gas Sensor Application

2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.23919/am-fpd52126.2021.9499209 ◽

2021 ◽

Author(s):

Htet Su Wai ◽

Testsuya Ueda ◽

Chaoyang Li

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Gas Sensor ◽

Oxide Films ◽

Radio Frequency Magnetron Sputtering ◽

Ratio Effect ◽

Sensor Application ◽

Zinc Oxide Films ◽

Oxygen Ratio

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Analysis of Sputtered Zinc Oxide Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001781 ◽

1980 ◽

Vol 38 ◽

pp. 416-417

Author(s):

T. A. Emma ◽

M. P. Singh

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Piezoelectric Materials ◽

Oxide Films ◽

Optical Quality ◽

Zno Films ◽

Rf Power ◽

X Ray Diffraction ◽

Sputtered Films ◽

Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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