Electro-Optic and Magneto-Optic Photonic Bandgap Materials Kevin

2004 ◽  
Vol 834 ◽  
Author(s):  
Y. Zou ◽  
Yanyun Wang ◽  
Kewen Li ◽  
Hua Jiang ◽  
Samir K. Mondal ◽  
...  
Keyword(s):  
Thin Film ◽  
Semiconductor Device ◽  
Photonic Bandgap ◽  
Organic Chemical ◽  
High Quality ◽  
Glass Substrates ◽  
Photonic Bandgap Materials ◽  
Electro Optic ◽  
Iron Garnet ◽  
Magneto Optic

ABSTRACTThis work presents a study of electro-optic and magneto-optic films made by a Metal-Organic Chemical Liquid Deposition (MOCLD) method. Electro-optic thin film, La-modified Pb(Mg1/3Nb2/3)O3-PbTiO3 (PLMNT) and magneto-optic thin film, rare earth doped yittrium iron garnet (YIG) have been grown at different conditions. Low temperature growth on buffered semiconductor substrates has been studied for semiconductor device integration. High quality PLMNT film with EO coefficient of 1x10-16 (m/V)2 was obtained with MOCLD. Doped and undoped YIG onto MgO and glass substrates and also onto buffered semiconductors were successfully deposited using MOCLD method. Several of these films had successful rotations that were of device quality. Based on these high quality functional films, two dimensional photonic bandgap waveguide structures were designed and simulated.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

scholarly journals Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2464 ◽  
Author(s):  
Yue Yin ◽  
Fang Ren ◽  
Yunyu Wang ◽  
Zhiqiang Liu ◽  
Jinping Ao ◽  
...  
Keyword(s):  
Thin Film ◽  
Defect Density ◽  
2D Materials ◽  
Van Der Waals ◽  
Single Peak ◽  
Organic Chemical ◽  
High Quality ◽  
Single Crystalline ◽  
Light Emitting ◽  
Deep Ultraviolet

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

scholarly journals Physical Properties and Behaviour of Highly Bi-Substituted Magneto-Optic Garnets for Applications in Integrated Optics and Photonics

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Mohammad Nur-E-Alam ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
Viacheslav Kotov
Keyword(s):  
Thin Film ◽  
Physical Properties ◽  
Integrated Optics ◽  
High Performance ◽  
Functional Materials ◽  
Visible Spectral Region ◽  
Nanocomposite Films ◽  
Wide Range ◽  
Iron Garnet ◽  
Magneto Optic

Rare-earth and Bi-substituted iron garnet thin film materials exhibit strong potential for application in various fields of science and frontier optical technologies. Bi-substituted iron garnets possess extraordinary optical and MO properties and are still considered as the best MO functional materials for various emerging integrated optics and photonics applications. However, these MO garnet materials are rarely seen in practical photonics use due to their high optical losses in the visible spectral region. In this paper, we report on the physical properties and magneto-optic behaviour of high-performance RF sputtered highly bismuth-substituted iron garnet and garnet-oxide nanocomposite films of generic composition type (Bi, Dy/Lu)3(Fe, Ga/Al)5O12. Our newly synthesized garnet materials form high-quality nanocrystalline thin film layers which demonstrate excellent optical and MO properties suitable for a wide range of applications in integrated optics and photonics.

Formation of multiferroic thin-film heterostructure (BiAl:YIG/La:PMNT) via a wet chemical process

2007 ◽  
Vol 22 (8) ◽  
pp. 2125-2129 ◽  
Author(s):  
Xiaomei Guo ◽  
Yingyin K. Zou ◽  
Kewen K. Li ◽  
Qiushui Chen ◽  
Hua Jiang
Keyword(s):  
Thin Film ◽  
Xrd Analysis ◽  
Buffer Layers ◽  
Chemical Route ◽  
Force Microscopy ◽  
Atomic Force ◽  
Electro Optic ◽  
Lead Magnesium ◽  
Wet Chemical ◽  
Iron Garnet

A novel multiferroic thin-film heterostructure exhibiting both ferromagnetic (FM) and ferroelectric (FE) properties, as well as magneto-optic (MO) and electro-optic (EO) properties, was fabricated via a wet chemical route. Oxide buffer layers were used to allow the growth of ferroelectric lanthanum modified lead magnesium niobate titanate (La:PMNT) layer on top of ferromagnetic bismuth and aluminum substituted yttrium iron garnet (BiAl:YIG). X-ray diffractometer (XRD) analysis confirmed the formation of both crystalline structures. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to examine the surface and cross-section morphologies of the resulted heterostructure. Multiferroic properties of the film were investigated.

scholarly journals Enhanced Magneto-Optic Properties in Sputtered Bi- Containing Ferrite Garnet Thin Films Fabricated Using Oxygen Plasma Treatment and Metal Oxide Protective Layers

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5113
Author(s):  
V. Kotov ◽  
M. Nur-E-Alam ◽  
M. Vasiliev ◽  
K. Alameh ◽  
D. Balabanov ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Visible Spectral Region ◽  
Oxygen Plasma Treatment ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Garnet Films ◽  
Iron Garnet ◽  
Magneto Optic

Magneto-optic (MO) imaging and sensing are at present the most developed practical applications of thin-film MO garnet materials. However, in order to improve sensitivity for a range of established and forward-looking applications, the technology and component-related advances are still necessary. These improvements are expected to originate from new material system development. We propose a set of technological modifications for the RF-magnetron sputtering deposition and crystallization annealing of magneto-optic bismuth-substituted iron-garnet films and investigate the improved material properties. Results show that standard crystallization annealing for the as-deposited ultrathin (sputtered 10 nm thick, amorphous phase) films resulted in more than a factor of two loss in the magneto-optical activity of the films in the visible spectral region, compared to the liquid-phase grown epitaxial films. Results also show that an additional 10 nm-thick metal-oxide (Bi2O3) protective layer above the amorphous film results in ~2.7 times increase in the magneto-optical quality of crystallized iron-garnet films. On the other hand, the effects of post-deposition oxygen (O2) plasma treatment on the magneto-optical (MO) properties of Bismuth substituted iron garnet thin film materials are investigated. Results show that in the visible part of the electromagnetic spectrum (at 532 nm), the O2 treated (up to 3 min) garnet films retain higher specific Faraday rotation and figures of merit compared to non-treated garnet films.

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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