MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer

ABSTRACTIn the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

Download Full-text

Material Properties of GaAs-on-Si and Fabrication of Digital Integrated Circuits

MRS Proceedings ◽

10.1557/proc-116-205 ◽

1988 ◽

Vol 116 ◽

Cited By ~ 3

Author(s):

N. Clhand ◽

F. Ren ◽

S. N. G. Chu ◽

A. M. Sergent ◽

T. Boone ◽

...

Keyword(s):

Integrated Circuits ◽

Buffer Layer ◽

Cross Sections ◽

Power Dissipation ◽

Propagation Delay ◽

Si Substrate ◽

Digital Integrated Circuits ◽

Lower Growth ◽

Gaas On Si ◽

Gaas Buffer Layer

AbstractWe have found that the surface morphology of GaAs grown on Si by MBE is smoother at lower growth temperatures (<500° C), but that the crystalline properties improve at higher growth temperatures (575-600°C). After thermal annealing at 850°C for 15 rai the TEM plan-views indicate that the dislocation density on the surface is reduced by a factor of 4 only. However, the TEM cross-sections indicate a much larger reduction of dislocations in highly dislocated regions near the GaAs/Si interface. Dislocations which are loops or tangles tend to shrink and clean up after annealing leaving a larger volume of GaAs free from, or with fewer, dislocations. The density of electron deep levels reduces with increasing thickness. Electron traps M1, M3 and M4 are not seen when a high purity As is used. For high device performance, the GaAs buffer layer thickness should be at least 2 µm. Although the wafer warpage increases from 7 µm to 52 µm as the GaAs thickness increases from 1.2 µm to 4.2 µm on 7.5 cm wafers, the wafers are as fiat as the original Si wafers under vacuum clamping. Wafer warpage reduced significantly when GaAs was grown selectively through a Si shadow mask. For 1 µm gate MESFET's, σvT was 65 mV on a 3.5 × 3 cm2 wafer area with gmax = 153 mS/ram. A minimum propagation delay of 52 ps/stage at a power dissipation of 1.3 mW/gate was measured for the 19 stage DCFL ring oscillators with 40= yield. Conductivity of the Si substrate and GaAs buffer layer posed no problem in channel isolation. The divide-by-two circuits performed the frequency dividing operation up to 1.8 GHz. The study shows that GaAs-on-Si has a great potential for digital IC's.

Download Full-text

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

Thin Solid Films ◽

10.1016/s0040-6090(95)08509-2 ◽

1996 ◽

Vol 286 (1-2) ◽

pp. 107-110 ◽

Cited By ~ 2

Author(s):

Ching-Ting Lee ◽

Chi-Yu Wang ◽

Yeong-Chang Chou

Keyword(s):

Buffer Layer ◽

Layer Function ◽

Gaas Buffer Layer

Download Full-text

MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.06.058 ◽

2005 ◽

Vol 284 (3-4) ◽

pp. 459-463 ◽

Cited By ~ 58

Author(s):

L. Wang ◽

Y. Pu ◽

Y.F. Chen ◽

C.L. Mo ◽

W.Q. Fang ◽

...

Keyword(s):

Buffer Layer ◽

Zno Films ◽

Mocvd Growth ◽

Aln Buffer

Download Full-text

Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

Applied Physics Letters ◽

10.1063/1.113157 ◽

1995 ◽

Vol 66 (19) ◽

pp. 2531-2533 ◽

Cited By ~ 4

Author(s):

Dong‐Keun Kim ◽

Ju‐Heon Ahn ◽

Byung‐Teak Lee ◽

H. J. Lee ◽

S. S. Cha ◽

...

Keyword(s):

Liquid Phase ◽

Epitaxial Growth ◽

Buffer Layer ◽

Patterned Substrates ◽

High Quality ◽

Liquid Phase Epitaxial ◽

Gaas Buffer Layer ◽

Liquid Phase Epitaxial Growth

Download Full-text

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l236 ◽

1993 ◽

Vol 32 (Part 2, No. 2B) ◽

pp. L236-L238 ◽

Cited By ~ 3

Author(s):

Kuninori Kitahara ◽

Nobuyuki Ohtsuka ◽

Toshihiko Ashino ◽

Masashi Ozeki ◽

Kazuo Nakajima

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Atomic Layer ◽

Layer Growth ◽

Atomic Layer Epitaxy ◽

Layer By Layer ◽

Gaas On Si

Download Full-text

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020190216 ◽

2020 ◽

Vol 90 (2) ◽

pp. 20301

Author(s):

Ilkay Demir ◽

Ahmet Emre Kasapoğlu ◽

Hasan Feyzi Budak ◽

Emre Gür ◽

Sezai Elagoz

Keyword(s):

Buffer Layer ◽

Growth Parameters ◽

Internal Quantum Efficiency ◽

Optical Quality ◽

Structural Quality ◽

Atomic Step ◽

Organic Vapor ◽

Gaas Buffer Layer ◽

Metal Organic ◽

Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

Download Full-text

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s109257830000003x ◽

2000 ◽

Vol 5 (1) ◽

Cited By ~ 45

Author(s):

J. Šik ◽

M. Schubert ◽

T. Hofmann ◽

V. Gottschalch

Keyword(s):

Buffer Layer ◽

Spectroscopic Ellipsometry ◽

Nitrogen Concentration ◽

Free Carrier ◽

Strong Increase ◽

Angle Of Incidence ◽

Surface Polariton ◽

Infrared Spectroscopic ◽

Gaas Buffer Layer ◽

Undoped Gaas

The infrared-optical properties of GaAs/GaNxAs1−x superlattice (SL) heterostructures (0 < x < 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm−1 to 700 cm−1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm−1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm−1 in the GaNxAs1−x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaNxAs1−x.

Download Full-text

The Structure of GaAs/Si(211) Heteroepitaxial Layers

MRS Proceedings ◽

10.1557/proc-91-91 ◽

1987 ◽

Vol 91 ◽

Cited By ~ 10

Author(s):

Zuzanna Liliental-Weber ◽

E.R. Weber ◽

J. Washburn ◽

T.Y. Liu ◽

H. Kroemer

Keyword(s):

Buffer Layer ◽

Surface Preparation ◽

Gaas Layer ◽

Misfit Dislocations ◽

Strained Layer ◽

Si Substrates ◽

Density Of Dislocations ◽

Gaas Buffer Layer ◽

Graded Layers ◽

Strained Layer Superlattices

ABSTRACTGallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface.Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505°C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (∼;5×l07/cm2) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates [8]. Applying three sets of the same strained layersdecreased the density of dislocations an additional ∼2/3 times.

Download Full-text