scholarly journals KARAKTERISTIK RANGKAIAN EKIVALEN DIODA BLEND ORGANIK P3OT : PCBM

2017 ◽  
Vol 2 (2) ◽  
pp. 7-12
Author(s):  
Winda Setya
Keyword(s):  
Equivalent Circuit ◽  
Indium Tin Oxide ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Organic Diode

Has conducted research diode characteristics equivalent circuit of the organic blend P3OT: PCBM.  In this study, the blend of P3OT:PCBM was sandwiched between a transparent indium tin oxide (ITO) electrode and an Al backside contact. The current-voltage characteristic of the diode was measured under the dark and illumination. In order to determine the electrical parameters of the diode, we employed an equivalent circuit model developed originally for inorganic diode. As a result, the series resistance decreases while the reverse saturation current density increases by decreasing the thickness of P3OT:PCBM layer. This result may be useful for improving the performance of developing organic diode.

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

scholarly journals Влияние легирования слоев брэгговских отражателей на электрические свойства InGaAs/GaAs метаморфных фотопреобразователей

2020 ◽  
Vol 54 (4) ◽  
pp. 400
Author(s):  
В.М. Емельянов ◽  
Н.А. Калюжный ◽  
С.А. Минтаиров ◽  
М.В. Нахимович ◽  
Р.А. Салий ◽  
...  
Keyword(s):  
Fill Factor ◽  
Series Resistance ◽  
Indium Content ◽  
Bragg Reflectors ◽  
Current Voltage Characteristic ◽  
Sharp Rise ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Silicon Doped

Abstract The current–voltage characteristics of In_ x Ga_1 –_ x As/GaAs metamorphic photovoltaic converters with built-in n -InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0 . 025–0 . 24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs– n :Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0 . 32–0 . 36 eV and a substantial width. To suppress this effect, the technology of the Te doping of n -InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm^2. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.

scholarly journals Hafnium dioxide effect on the electrical properties of M/n-GaN structure

2020 ◽  
Vol 38 (1) ◽  
pp. 165-173
Author(s):  
Sadoun Ali ◽  
Mansouri Sedik ◽  
Chellali Mohammed ◽  
Lakhdar Nacereddine ◽  
Hima Abdelkader ◽  
...  
Keyword(s):  
Barrier Height ◽  
Series Resistance ◽  
Hafnium Dioxide ◽  
Electrical Parameters ◽  
Semiconductor Interface ◽  
Metal Insulator ◽  
Current Voltage ◽  
Equation Versus ◽  
Diode Current ◽  
Numerical Simulator

AbstractIn the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson (\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right) equation versus ({1 \over {{\rm{kT}}}}) have been extracted using the mentioned methods. The following values: {\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}, 14.29 A/cm2 K2, 25.53 A/cm2 K2 and 21.75 A/cm2 K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.

scholarly journals On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Abbas Sabahi Namini ◽  
Mehdi Shahedi Asl ◽  
Gholamreza Pirgholi-Givi ◽  
Seyed Ali Delbari ◽  
Javid Farazin ◽  
...  
Keyword(s):  
Series Resistance ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Current Voltage ◽  
Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES

2010 ◽  
Vol 24 (17) ◽  
pp. 1883-1890
Author(s):  
ALIREZA KARGAR
Keyword(s):  
Carbon Nanotube ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Gate Insulator ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage by using these parameters.

Reply to “Comment on ‘Simulation of current–voltage curves for inverted structure perovskite solar cells using equivalent circuit model with inductance’ ”

2017 ◽  
Vol 10 (5) ◽  
pp. 059102 ◽  
Author(s):  
Ludmila Cojocaru ◽  
Satoshi Uchida ◽  
Piyankarage V. V. Jayaweera ◽  
Shoji Kaneko ◽  
Yasutake Toyoshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Equivalent Circuit ◽  
Perovskite Solar Cells ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Inverted Structure ◽  
Current Voltage
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