Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters

2020 ◽  
Vol E103.C (4) ◽  
pp. 144-152
Author(s):  
Kentaro KOJIMA ◽  
Kodai YAMADA ◽  
Jun FURUTA ◽  
Kazutoshi KOBAYASHI
Keyword(s):  
Cross Sections ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

2013 ◽  
Vol 60 (6) ◽  
pp. 4368-4373 ◽  
Author(s):  
N. J. Gaspard ◽  
S. Jagannathan ◽  
Z. J. Diggins ◽  
M. P. King ◽  
S-J. Wen ◽  
...  
Keyword(s):  
Cross Sections ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event ◽  
Flip Flop ◽  
Technology Scaling

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy

Simulation of Thermal-Neutron-Induced Single-Event Upset Using Particle and Heavy-Ion Transport Code System

2007 ◽  
Vol 46 (6A) ◽  
pp. 3377-3379
Author(s):  
Yutaka Arita ◽  
Koji Niita ◽  
Yuji Kihara ◽  
Junich Mitsuhasi ◽  
Mikio Takai ◽  
...  
Keyword(s):  
Ion Transport ◽  
Thermal Neutron ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event ◽  
Code System ◽  
Transport Code

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

scholarly journals Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

2007 ◽  
Vol 54 (6) ◽  
pp. 2303-2311 ◽  
Author(s):  
P. E. Dodd ◽  
J. R. Schwank ◽  
M. R. Shaneyfelt ◽  
J. A. Felix ◽  
P. Paillet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy ◽  
Nuclear Interactions

Modeling the heavy ion cross-section for single event upset with track structure effects: the HIC-UP-TS model

1996 ◽  
Vol 43 (6) ◽  
pp. 2814-2819 ◽  
Author(s):  
L.W. Connell ◽  
F.W. Sexton ◽  
P.J. McDaniel ◽  
A.K. Prinja
Keyword(s):  
Cross Section ◽  
Heavy Ion ◽  
Track Structure ◽  
Single Event Upset ◽  
Single Event
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