scholarly journals Synthesis CuInSe2 (CISe) Thin Films Prepared from Metal-Ethanolamine Complex Compound

2017 ◽  
Vol 2 (2) ◽  
pp. 191 ◽  
Author(s):  
Ersan Y Muslih ◽  
Agus Ismail ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Reaction Mechanism ◽  
Spin Coating ◽  
Soda Lime ◽  
Complex Compounds ◽  
Soda Lime Glass ◽  
Ambient Atmosphere ◽  
Structure Morphology

CuInSe2 (CISe) thin film was successfully fabricated from copper and indium salts with ethanolamine as precursors. All of these precursors were dissolved and formed complex compounds with ethanolamine simultaneously which deposited on soda lime glass by spin coating at 200 rpm, followed by heat treatment in the ambient atmosphere at 200oC for 120 minutes and finally selenization at 550oC using selenium pellets under Ar (95%) + H2 (5%) for 120 minutes to fabricate CISe thin film. Reaction mechanism, structure, morphology and chemical composition also reported in this work.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

scholarly journals OPTICAL AND STRUCTURAL PROPERTIES OF ZnxCd1-xS (X=0.2, 0.4, 0.6 AND 0.8)

2013 ◽  
Vol 1 (4) ◽  
pp. 30-46
Author(s):  
Humaira Latif ◽  
Rehana Zia ◽  
Muneeb Irshad ◽  
Huma Latif
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Conductivity ◽  
Room Temperature ◽  
Wavelength Region ◽  
Zinc Content ◽  
Soda Lime ◽  
Chamber Pressure ◽  
Visible Range ◽  
Soda Lime Glass

Thin films of ZnxCd1-xS (x=0.2, 0.4, 0.6 and 0.8) were deposited on cleaned soda lime glass substrates at room temperature by thermal evaporation technique, having source current 50-65 Ampere, chamber pressure 10-5Torr and deposition rate 0.4 nm/sec. These conditions were same for all the thin films having different zinc concentrations. UV-VIS Spectrophotometry was used to study the optical properties of thin films of ZnxCd1-xS in room temperature. XRD was used to study the structure of the thin films of ZnxCd1-xS having various composition of „x‟. UV-VIS studies revealed that as the concentration of zinc content increases, transmission spectra shift towards the shorter wavelength region from (575-526)nm, the percent transmittance was increased in the visible range with the increase of zinc content, absorption edges and absorption coefficient spectra also shift towards the shorter wavelength and hence the direct band gap energy varied non-linearly from 2.55ev to 2.84ev.It was also found that optical conductivity increases with photon energy and thin film of Zn0.4Cd0.6S has high optical conductivity as compared to other value of „x‟. The reflectance and optical constants such as the extinction coefficient and refractive index were also found to depend upon the zinc concentration in the films. XRD studies showed that all the thin films of ZnxCd1-xS (x= 0.2, 0.4, 0.6 and 0.8) had a strong peak in between the diffraction angle 26.60- 31.70, which confirmed that all the thin films exhibited the wurtzite structure with a preferential orientation of (002) plane. It was also found that lattice constants, inters planer spacing, volume and grain size decreases except for Zn0.4Cd0.6S thin film which had high crystallinity as compared to the other composition of the zinc content.

Structural Evolution of Cu-In-Se Thin Films Prepared by Spin Coating Technique

2013 ◽  
Vol 770 ◽  
pp. 279-282
Author(s):  
Kentreeda Lipiwongwattanakit ◽  
Chanwit Chityuttakan ◽  
Wandee Onreabroy ◽  
Panita Chityuttakan
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Soda Lime ◽  
Spin Coating Technique ◽  
Precursor Film ◽  
Soda Lime Glass ◽  
Copper Indium Diselenide ◽  
Coating Technique ◽  
Copper Indium ◽  
Selenization Process

A low cost and simple fabrication of Cu-In-Se polycrystalline thin film for copper indium diselenide solar cell was prepared in a two-step process. The first step, a Cu In precursor film was prepared from copper acetate monohydrate and indium acetate mixed solution. The solution was coated on molybdenum-coated soda lime glass using the spin coating technique at room temperature following annealing in air at 500°C for 20 minutes. The effect between spin parameters and film thickness of as-deposited Cu-In film were investigated. The second step, selenium was added in the precursor film by selenization process at 450°C in Se atmosphere for 30 minutes in a low vacuum tube furnace with background pressure of 10-2 mbar. The crystallographic properties of Cu-In-Se thin films were identified by X-ray diffractometer (XRD), the surface and cross-sectional morphology of films were observed by scanning electron microscopy (SEM). The chemical compositions of films were characterized by energy dispersive spectroscopy (EDS). It was found that the thickness of Cu-In films deposited on molybdenum-coated soda lime glass were approximately 1 μm. The EDS analysis showed the composition ratio in atomic % of Cu/In as approximately as 0.77. The XRD results reveal that the as-deposited Cu-In films consist of a mixture of copper oxide (CuO) and indium oxide (In2O3) phase at the annealing temperature of 500°C. Furthermore, CuO and In2O3 phase were converted to (112) oriented chalcopyrite copper indium diselenide after selenization process.

The Optical and Electrical Properties of Polymer Poly (3-Hexylthiophene) P3HT by Heat Treatment

2015 ◽  
Vol 1109 ◽  
pp. 419-423
Author(s):  
C.H. Rosmani ◽  
A.Z. Zainurul ◽  
M. Rusop ◽  
S. Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Optical Properties ◽  
Electrical Properties ◽  
Spin Coating ◽  
Effect Of Temperature ◽  
Optical And Electrical Properties ◽  
Optical Absorption Spectra ◽  
Coating Method

The polymer of poly (3-hexylthiophene) was active layer in application such as solar cells. In this paper, P3HT has been chosed to know the effect of temperature onto P3HT. The optical properties of P3HT were measured by using photoluminescence spectroscopy (PL) and UV-Vis measurement. The polymer of P3HT has been spin coated on the glass by using spin-coating method for thin films produced. The temperature was measured start at 60°C to 180 o C. From PL result the peak was exist at range 500-600 nm and started moved to left side when temperature increase. The UV-Vis result showed at range 400-500 nm towards to blue shifted. After heat treatment, the optical absorption spectra for the thin film of P3HT on the glass showed a distinct red-shifted with developing vibronic features of P3HT and the quenched photoluminescence (PL) spectrum was considerably restored .Keywords: P3HT; temperature; Uv-Vis; photoluminescence; PL; I-V

Effect of Heat Treatment on the Crystal Structure and Optical Band Gap of Cigs Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 94-97
Author(s):  
Lei Han ◽  
Tie Zhu Ding ◽  
Yan Lai Wang ◽  
Luo Meng Chao ◽  
Tao Shang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Heat Treatment ◽  
Band Gap ◽  
Soda Lime ◽  
Absorption Efficiency ◽  
Treatment Temperature ◽  
Soda Lime Glass ◽  
Glass Substrates ◽  
Crystallization Conditions

The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer has been determined. The influence of different heat treatment temperature on crystal structure and optical properties has been studied. The results shows that heat treatment at 450°C, the films along the (112) plane preferential grow. The thin film’s structure is integrity, the film is in best crystallization conditions, band gap is 1.35eV and the film has a high visible light absorption efficiency.

Preparation and Characterization of PZT Thin Films on ITO/Glass Substrate by CSD

2006 ◽  
Vol 301 ◽  
pp. 41-44 ◽  
Author(s):  
Tomoya Ohno ◽  
Masayuki Fujimoto ◽  
Hisao Suzuki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrate ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Pzt Thin Films ◽  
Light Region ◽  
Pzt Thin Film ◽  
Ito Glass

This paper describes the deposition of PZT thin films on soda-lime glass substrate with ITO bottom electrode by CSD (Chemical Solution Deposition). The transmittance of the obtained PZT thin film on ITO/glass substrate was about 60 % in the visible light region. The deposited transparent PZT thin film exhibited the ferroelectricity of Pr=36.3 μC/cm2 and Ec=71.3 kV/cm. In addition, the piezoelectric property of the resultant PZT thin film was relatively large and exhibited the measured effective d33 of 120 pC/N after the polarization.

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

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