scholarly journals Fully integrated on-chip switched capacitor DC-DC converters for battery-powered mixed-signal SoCs

2012 ◽  
Author(s):  
Heungjun Jeon
2012 ◽  
Vol 263-266 ◽  
pp. 76-79
Author(s):  
Hui Kai Fu

A technique of replacing the floating capacitor by an active capacitance multiplier is proposed in this paper, in order to overcome the difficulty in fabrication of the large capacitors in monolithic integrated circuits. The simulation results show that the same output characteristics can be obtained from the new charge pump with a capacitor much smaller than that adopted in the normal charge pump products. Therefore, the new charge pump is much easier to be fabricated in fully integrated realizations with on-chip capacitor.


Symmetry ◽  
2017 ◽  
Vol 9 (1) ◽  
pp. 18 ◽  
Author(s):  
Heungjun Jeon ◽  
Kyung Kim ◽  
Yong-Bin Kim

Author(s):  
Fabio Aquilino ◽  
Francesco G. Della Corte ◽  
Letizia Fragomeni ◽  
Massimo Merenda ◽  
Fabio Zito

Electronics ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 68
Author(s):  
Woorham Bae ◽  
Sung-Yong Cho ◽  
Deog-Kyoon Jeong

This paper presents a fully integrated Peripheral Component Interconnect (PCI) Express (PCIe) Gen4 physical layer (PHY) transmitter. The prototype chip is fabricated in a 28 nm low-power CMOS process, and the active area of the proposed transmitter is 0.23 mm2. To enable voltage scaling across wide operating rates from 2.5 Gb/s to 16 Gb/s, two on-chip supply regulators are included in the transmitter. At the same time, the regulators maintain the output impedance of the transmitter to meet the return loss specification of the PCIe, by including replica segments of the output driver and reference resistance in the regulator loop. A three-tap finite-impulse-response (FIR) equalization is implemented and, therefore, the transmitter provides more than 9.5 dB equalization which is required in the PCIe specification. At 16 Gb/s, the prototype chip achieves energy efficiency of 1.93 pJ/bit including all the interface, bias, and built-in self-test circuits.


2021 ◽  
Vol 11 (2) ◽  
pp. 22
Author(s):  
Umberto Ferlito ◽  
Alfio Dario Grasso ◽  
Michele Vaiana ◽  
Giuseppe Bruno

Charge-Based Capacitance Measurement (CBCM) technique is a simple but effective technique for measuring capacitance values down to the attofarad level. However, when adopted for fully on-chip implementation, this technique suffers output offset caused by mismatches and process variations. This paper introduces a novel method that compensates the offset of a fully integrated differential CBCM electronic front-end. After a detailed theoretical analysis of the differential CBCM topology, we present and discuss a modified architecture that compensates mismatches and increases robustness against mismatches and process variations. The proposed circuit has been simulated using a standard 130-nm technology and shows a sensitivity of 1.3 mV/aF and a 20× reduction of the standard deviation of the differential output voltage as compared to the traditional solution.


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