Micro-Welding of Glass Substrate by YAG Laser – Effects of Substrate Temperature –

2016 ◽  
Vol 10 (6) ◽  
pp. 909-915 ◽  
Author(s):  
Hirofumi Suzuki ◽  
◽  
Tsuyoshi Funayama ◽  
Hideo Shibutani ◽  
Osamu Horiuchi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Glass Surface ◽  
Laser Power ◽  
Yag Laser ◽  
Glass Substrates ◽  
Micro Cracks ◽  
Welding Strength ◽  
Glass Plates ◽  
Welding Surface ◽  
Coated Area

This paper deals with micro-welding of glass substrates using a YAG laser to prevent cracks. In order to fuse the glass substrates precisely using a YAG laser, a new glass welding method was proposed and developed in the previous report. In the method, two glass plates were made to overlap and the welded area of the glass surface was coated with absorbent. The YAG laser irradiated the surface, and the laser was absorbed in the coated area only. Therefore, only the coated area can be welded and the glass surface is expected to be clear. However, in the previous report, some micro cracks generated by the thermal shock of the YAG laser appeared on the fused area of the glass substrates. In this study, it is proposed that pre-heating the substrates decreses the heat shock, producing a crack-free surface of the fused area. In the pre-heated welding experiments, the substrate temperature and laser power are changed, and the welding surface and welding strength are evaluated. It is clarified from the experiments, that the glass plates can be welded without a crack using pre-heated welding.

XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

2013 ◽  
Vol 845 ◽  
pp. 241-245
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Direct Current Plasma ◽  
Crystallite Sizes ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Control of porosity in fluoride thin films prepared by vapor deposition

2007 ◽  
Vol 22 (7) ◽  
pp. 2012-2016 ◽  
Author(s):  
Hakkwan Kim ◽  
Alexander H. King
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Lithium Fluoride ◽  
Quartz Crystal ◽  
Thermal Evaporation ◽  
Magnesium Fluoride ◽  
Crystal Thickness ◽  
Glass Substrates ◽  
Atomic Force

We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF2), and calcium fluoride (CaF2) as a function of the substrate temperature for films deposited by thermal evaporation onto glass substrates. The amount of porosity in the thin films was measured using an atomic force microscope and a quartz crystal thickness monitor. The porosity was very sensitive to the substrate temperature and decreased as the substrate temperature increased. Consistent behavior was observed among all of the materials in this study.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Thin Film Depositions of CdTe Semiconductors on Amorphous and Single Crystal Substrates and Comparisons of their Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Indium Doping ◽  
Sapphire Single Crystal ◽  
Cdte Thin Films ◽  
The Difference

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.

Effect of the Substrate Temperature on the Transition from Amorphous to Microcrystalline Silicon with High Hydrogen Dilution

2013 ◽  
Vol 773 ◽  
pp. 520-523
Author(s):  
Ming Liang Zhang ◽  
Hui Dong Yang ◽  
Kai Zhao Yang
Keyword(s):  
Substrate Temperature ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
High Hydrogen ◽  
Hydrogenated Silicon ◽  
Glass Substrates ◽  
Amorphous Hydrogenated Silicon ◽  
The Stability

Transition films of amorphous hydrogenated silicon (a-Si:H) to microcrystalline silicon (μc-Si:H) have attracted much attention due to the stability, high overall quality for solar cells configuration. Hydrogenated amorphous and microcrystalline silicon films were deposited on glass substrates by a conventional plasma enhanced chemical vapor deposition (PEVCD) varying the substrate temperature from 275 to 350 °C. A silane concentration of 4% and a total flow rate of 100 sccm were used at a gas pressure of 267 Pa. The film thicknesses of the prepared samples were between 700 and 900 nm estimated from the optical transmission spectra. The deposition rates were between 0.2 and 0.3 nm/s. The phase composition of the deposited silicon films were investigated by Raman spectroscopy. The transition from amorphous to microcrystalline silicon was found at the higher temperatures. The crystallization process of the amorphous silicon can be affected by the substrate temperature. A narrow structural transition region was observed from the changes of the crystalline volume fraction. The dark electrical conductivity of the silicon films increased as the substrate temperature increasing.

Uniform and Directed Crystallization of Deposited a­Si on Glass Substrates at Linear Velocities Of 1 to 20 Meters Per Second

1981 ◽  
Vol 4 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
V. T. Nguyen ◽  
G. A. Rozgonyi
Keyword(s):  
Phase Boundary ◽  
Laser Power ◽  
Crystallization Process ◽  
Solid Phase ◽  
Crystallization Front ◽  
Continuous Furnace ◽  
Directed Crystallization ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Scan Speed

ABSTRACTIt has been found that careful control of the laser power and scan speed will convert deposited a­Si into continuous lines of uniformly crystallized silicon. Two solid phase “explosive” crystallization front velocities of 1000 cm/sec and 1400 cm/sec have been experimentally determined by matching the laser scan velocity with the runaway a–c phase boundary. If solid phase explosive crystallization is suppressed by pre-annealing, then a liquid assisted runaway crystallization velocity of 220 cm/sec is observed, as well as a continuous furnace-like crystallization process at 250 cm/sec.

Substrate Temperature Dependence on Sputtered Titania Thin Film

2013 ◽  
Vol 795 ◽  
pp. 294-298 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
A.B. Raudah ◽  
W.F.H. Abdullah ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Film Structure ◽  
Glass Substrates ◽  
Titania Thin Film ◽  
Titania Films ◽  
Substrate Temperatures

Titania films were deposited on glass substrates by RF magnetron sputtering method at different substrate temperatures which are room temperature, 50°C, 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and cross section of the particles structure were studied using Field Emission Scanning Electron Microscope. It is shown that the increase in substrate temperature during the sputtering process up to 300°C will make the film become more dense and grown in a columnar structure. Significant changes occur on the titania thin film structure at 250°C due to the significant changes in the surface thermal energy and the surface diffusion.

Sign in / Sign up

Export Citation Format

Share Document