scholarly journals IMPROVED PROCESS FLOW FOR FORMATION OF BIPOLAR STATIC INDUCTION TRANSISTOR

2018 ◽  
Vol 17 (1) ◽  
pp. 72-78 ◽  
Author(s):  
N. L. Lagunovich
Keyword(s):  
Process Simulation ◽  
Electrical Characteristics ◽  
Semiconductor Wafer ◽  
Process Flow ◽  
Software Products ◽  
Virtual Production ◽  
Current Voltage ◽  
Static Induction Transistor ◽  
Current Voltage Characteristics ◽  
Static Induction

The improved process flow differs from the known ones in the fact that the same photomask is used for formation of a channel stopper and metal contacts. Such approach has made it possible not only to decrease a number of the used phototomasks but it has also permitted to obtain a device with the required electrical characteristics. The paper presnts results of device and process simulation of bipolar static induction transistor (BSIT) manufactured in accordance with the improved process flow, measuring data of electrophysical parameters of its experimental samples and also comparison of simulation results with experimental data. At present there is a large quantity of software products that permit to perform physico-topological simulation of semiconductor structures. The device-process simulation is considered as a part of such simulation and it allows prior to obtaining experimental samples to determine process flow parameters at which the investigated structure will have necessary electrical parameters and characteristics. Thus the device-process simulation represents a certain “virtual production” for manufacturing semiconductor devices and microcircuits beginning from the startup stage of semiconductor wafer at production site and finishing by electrical characteristics measurements of the obtained structure. The BSIT device simulation being an analog of direct measurements of current-voltage characteristics has been performed with help of program system MOD-1D developed by the author. The BSIT model based on the fundamental system of semiconductor equations is mainly used for calculation of the BSIT current-voltage characteristics direct branch and its parameters and charge carrier recombination is described by Shockley – Read – Hall expression and equation depicting the Auger recombination process.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Metastable Defect Distributions in CIGS Solar Cells and Their Impact on Device Efficiency

2007 ◽  
Vol 1012 ◽  
Author(s):  
Malgorzata Igalson
Keyword(s):  
Carrier Transport ◽  
Theoretical Calculations ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Device Efficiency ◽  
Current Voltage Characteristics ◽  
Cigs Solar Cells ◽  
Metastable Effects ◽  
The Impact ◽  
Metastable Defect

AbstractMetastabilities in the electrical characteristics of CIGS devices are commonly observed phenomena originating from persistent changes of shallow and deep levels distributions within the absorber. We examine characteristic changes induced by voltage bias and light together with their relaxation behavior and interpret them as the consequences of a negative-U type of centers predicted by theoretical calculations of Lany and Zunger. It is shown how the properties of these centers justify a model of p+ layer explaining specific features of light and dark current-voltage characteristics. The discussion showing the impact of various charge distributions on carrier transport is presented. The arguments are provided, that centers responsible for metastable effects are also to blame for majority of photovoltaic losses exhibited in various devices.

Study of Nonlinear Current-Voltage Characteristic of Semiconductor Ceramic by the Method of Tilted Energy Band

2014 ◽  
Vol 941-944 ◽  
pp. 547-550
Author(s):  
Chao Fang ◽  
Liang Yan Chen
Keyword(s):  
Grain Size ◽  
Energy Band ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Non Linear ◽  
Semiconducting Ceramics ◽  
Current Voltage Characteristics ◽  
Effective Carrier ◽  
Grain Boundary Barrier

A analytic method for the calculation of the electrical characteristics of semiconducting ceramics is suggested. This paper put forward the concept of effective carrier concentration. Electrical characteristics under extra electric field have been calculated by the method of tilted energy band. The non-linear current-voltage characteristics with different grain sizes has been obtained. The results pointed out that the current-voltage characteristics divide into three regions: Linear region before breakdown field, nonlinear region near breakdown field and upturn region after breakdown field; The grain boundary barrier leads to the strong non-linear characteristics, which has nothing to do with the grain size. With the grain size decreasing, the breakdown field increases. The results are compared with experimental data.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

Stress Test of Cascode Switch Using SiC Static Induction Transistor

2020 ◽  
Vol 1004 ◽  
pp. 985-991
Author(s):  
Takashi Matsumoto ◽  
Yasunori Tanaka ◽  
Koji Yano
Keyword(s):  
High Reliability ◽  
Stress Test ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Stress Tests ◽  
Turn On ◽  
Significant Difference ◽  
Static Induction Transistor ◽  
Static Induction ◽  
Channel Region

Stress tests were conducted for the cascode switch using the SiC buried gate static induction transistor (SiC-BGSIT). The stress of the reverse overshoot voltage was periodically applied to the pn junction between the gate terminal and source one in the BGSIT in the cascode with pulses of 40kHz for 202 hours. This simulates the stress which can be occurred in the channel region of the BGSIT during the turn-off and turn-on operation with a parasitic inductance in the interconnection of the cascode package. The result of the stress tests has revealed that there is no significant difference between the electrical characteristics of the BGSIT cascode sample before the stress and those after the stress. Thus, the BGSIT cascode can guarantee high reliability against the stress. The result from the drain current DLTS suggests that no deferent kind of defect is created in the channel region of the BGSIT by the stress.

New Method for Improving the Electrical Characteristics of P-N Junction Diode

2011 ◽  
Vol 378-379 ◽  
pp. 606-609 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Amporn Poyai ◽  
Surasak Niemcharoen
Keyword(s):  
Carrier Lifetime ◽  
Series Resistance ◽  
Device Performance ◽  
Electrical Characteristics ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

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