scholarly journals SiCi_xNxthin films preparation by TEA-Co2 Laser induced Vapor-phase reaction and study of the nature of chemical bonds and some their electrical and optical properties

2004 ◽  
Vol 1 (2) ◽  
pp. 239-246
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Localized States ◽  
Infrared Spectrometry ◽  
Phase Reaction ◽  
Chemical Bonds ◽  
Electrical And Optical Properties ◽  
Vapor Phase Reaction ◽  
Ft Ir ◽  
C And N ◽  
Deposited Films

A pulsed (TEA-0O2) laser was used to dissociate molecules of silane ethylene (C2I-14) and ammonia (NH3) gases, through collision assisted multiple photon dissociation (MPD) to deposit(SiC i_xNx) thin films, where the X-values are 0, 0.13 and 0.33, on glass substrate at T,----648 K. deposition rate of (0.416-0.833) nm/pulse and thickness of (500-1000)nm .Fourier transform infrared spectrometry (FT-IR) was used to study the nature of the chemical bonds that exist in the films. Results revealed that these films contain complex networks of the atomic (Si, C, and N), other a quantity of atomic hydrogen and chemical bonds such as (Si-N, C-N, C-14 and N-H).Absorbance and Transmittance spectra in the wavelength range (400-1100) nm were used to study the optical properties of the deposited films. It was found the optical nergy ap E0) of these films is indirect and increases with increasing (X) while the width of localized states decreases.The study of the electrical properties of the deposited films revealed that their electrical conductivity at any constant temperature decreases with increasing (X) and the films have two activation energies both increase with increasing (X).

Ion-Assisted Deposition of CaF2 Films on (111) Si

1992 ◽  
Vol 268 ◽  
Author(s):  
J.G. Cook ◽  
H. Moeller ◽  
S.R. Das ◽  
Li Zhongming
Keyword(s):  
Optical Properties ◽  
Emission Spectroscopy ◽  
Rf Discharge ◽  
Electrical And Optical Properties ◽  
Sputter Deposited ◽  
Deposited Films ◽  
Better Than

ABSTRACTCaF2 films have been deposited by evaporation onto H-passivated (111) Si in the presence of an rf discharge. The discharge is seen to promote epitaxy. Emission spectroscopy reveals strong CaF2 bands and a weak Ca line, indicating that deposition is largely molecular but that some breakup of the CaF2 molecules occurs in the discharge. Electrical and optical properties of these films were substantially better than those of sputter-deposited films.

scholarly journals Studying the effect of annealing on some electrical and optical properties for thin CdS , CdS:In films

2010 ◽  
Vol 7 (3) ◽  
pp. 1141-1145
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Glass Substrate ◽  
Energy Gap ◽  
Displacement Method ◽  
Structural And Optical Properties ◽  
Electrical And Optical Properties ◽  
Deposited Films

In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration .

Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

2013 ◽  
Vol 441 ◽  
pp. 11-14
Author(s):  
Rong Bin Liu ◽  
Kai Liang Zhang ◽  
Yu Jie Yuan ◽  
Fang Wang ◽  
Juan Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Processing ◽  
Rf Magnetron Sputtering ◽  
Processing Temperature ◽  
Rapid Thermal Process ◽  
Electrical And Optical Properties ◽  
Pure Nitrogen ◽  
Glass Substrates ◽  
Deposited Films

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10-2 to 1.48×10-3Ωcm and carrier concentration increased from 1.48×1020 to 5.59×1020 cm3 when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

scholarly journals Effect of Postdeposition Annealing on the Structural, Electrical, and Optical Properties of DC Magnetron SputteredTa2O5Films

2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
S. V. Jagadeesh Chandra ◽  
P. Sreedhara Reddy ◽  
G. Mohan Rao ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Electrical Characteristics ◽  
Electrical And Optical Properties ◽  
Tantalum Target ◽  
Deposited Films

Thin films of tantalum oxide were formed on quartz and silicon (111) substrates kept at room temperature (303 K) by reactive sputtering of tantalum target in the presence of mixture of oxygen and argon gases. The as-deposited films were annealed in air for an hour in the temperature range 673–873 K. The films were characterized by studying structural, dielectric, electrical, and optical properties. The as-deposited films were amorphous in nature. As the annealing temperature increased to 673 K, the films were transformed into polycrystalline. Electrical characteristics of as-deposited and annealedTa2O5thin films were compared. The thermal annealing reduced the leakage current density and increased the dielectric constant. The optical transmittance of the films increased with the increase of annealing temperature. The as-deposited films showed the optical band gap of 4.38 eV. It increased to 4.44 eV with the increase of annealing temperature to 873 K. The as-deposited films showed the low value (1.89) of refractive index and it increased to 2.15 when annealed at 873 K. The increase of refractive index with annealing temperature was due to the increase in the packing density and crystallinity of the films.

Deposition and Properties of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films for Solar Cells

2013 ◽  
Vol 662 ◽  
pp. 173-176
Author(s):  
Yan Long Li ◽  
Zhong Lin Zhang ◽  
Hong Gang ◽  
Peng Qiu
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Wide Range ◽  
Deposited Films

Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique is widely used in preparing uniform and large area a-Si:H films for various photoelectric devices. However, in the deposition processes of PECVD, the plasma bombardment to the deposited films will result in hindering the processes of crystallization. In the processes of hot-wire chemical vapor deposition (HWCVD), high-crystallinity films with a quickly growth rate can be obtained. In this article, hydrogenated microcrystalline silicon (μc-Si:H) films on glass substrate were prepared by a combination technique of HWCVD and RF inductively coupled plasma (ICP) at a low pressure (7Pa). The deposition parameters including the distance between the glass substrate with the hot wire and the flow ratio of SiH4/H2 in order to optimize the properties of μc-Si:H films. The crystallinity, microstructure, electrical and optical properties of the μc-Si:H films were investigated by Raman Spectroscopy, X-ray diffraction analysis (XRD), and UV-visible spectrometer, respectively. The results indicate that the crystallinity of the μc-Si:H films can be controlled at a very wide range and the deposition rate is up to 3nm/s. The deposited films show excellence electrical and optical properties.

scholarly journals Optical and electrical characterization of BixSe1−x thin films

2016 ◽  
Vol 34 (2) ◽  
pp. 460-467
Author(s):  
M.M. Ibrahim ◽  
S.A. Fayek ◽  
G.A.M. Amin ◽  
D.M. Elnagar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Changes ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Film Surface ◽  
Localized States ◽  
Optical Parameters ◽  
Electrical And Optical Properties ◽  
Evaporation Technique

AbstractBulk samples of the BixSe1-x system with (x = 0, 5, and 10) were prepared using conventional melt quenching technique. Thin films were then deposited by thermal evaporation technique under high vacuum conditions from the prepared bulk samples. Effect of Bi substitution on surface morphology, electrical and optical properties of BixSe1-x thin films was studied. X-ray diffraction studies showed the formation of nanocrystalline clusters at Bi concentration x = 10. Formation of these clusters resulted in a rough surface which was confirmed by AFM measurements. The film surface was smooth, with RMS roughness of 0.0124 nm for Bi5Se95. For Bi10Se90, the RMS roughness increased to 3.93 nm indicating the formation of Bi2Se3 clusters. A simple hot probe technique showed a transition from p-type to n-type due to Bi incorporation. Charge transport mechanisms were investigated by temperature dependent DC electrical conductivity measurements in the temperature range of 209 K to 313 K. Electrical activation energy (ΔE) of the films with different Bi concentrations was found to exhibit a notable change at the p to n transition. At low temperature, the conduction was in reasonable agreement with Mott’s condition of variable range hopping. Mott parameters and the density of localized states near Fermi level were evaluated and correlated with the structural changes resulting from Bi addition. In addition, a red shift of the optical absorption edge of the films under study caused by Bi-Se substitution was observed. Slight changes in the optical parameters were observed with the γ-irradiation. Addition of Bi atoms could be used to tailor the structural, electrical and optical properties of chalcogenide materials such as junctionless photovoltaic devices.

scholarly journals Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 196
Author(s):  
Shraddha Dhanraj Nehate ◽  
Ashwin Kumar Saikumar ◽  
Kalpathy B. Sundaram
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Boron Carbide ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Metal Insulator Metal ◽  
Deposited Films

Amorphous hydrogenated boron carbide films were deposited on silicon and glass substrates using radio frequency sputtering. The substrate temperature was varied from room temperature to 300 °C. The substrate temperature during deposition was found to have significant effects on the electrical and optical properties of the deposited films. X-ray photoelectron spectroscopy (XPS) revealed an increase in sp2-bonded carbon in the films with increasing substrate temperature. Reflection electron energy loss spectroscopy (REELS) was performed in order to detect the presence of hydrogen in the films. Metal-insulator-metal (MIM) structure was developed using Al and hydrogenated boron carbide to measure dielectric value and resistivity. Deposited films exhibited lower dielectric values than pure boron carbide films. With higher substrate deposition temperature, a decreasing trend in dielectric value and resistivity of the films was observed. For different substrate temperatures, the dielectric value of films ranged from 6.5–3.5, and optical bandgap values were between 2.25–2.6 eV.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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