Magnetic Enhancement and Nitriding Process of Fe Atomic Layers on Si (111)-7×7-CH3OH Surface

Abstract Fe atoms were steamed on Si(111)-7×7 surface, which had been saturated by CH3OH. Aim to greatly enhance the magnetic performance, nitriding experiments were implemented and adjusted on the existing linear Fe clusters. First of all, the dissociation of CH3OH adsorption process was deducted in detail, which laid a good foundation for the better use of surface quasi-potential. Further to solve the coming problems like weak linearity and low nitriding effect, the formation mechanism of iron-nitride was explored. Atomic layers of Fe deposition are confirmed as the key to NH3 dissociation process (at room temperature). Specifically, the higher Fe atomic layer contacted by NH3, the weaker influence of surface quasi-potential. With the introduction of Ar, Fe deposition could be controlled at 1-2 atomic layers, result in good NH3 dissociation and nitriding efficiency. Combing with magnetic performance result, the density of residual magnetization is improved from 1.5E-0.5 emu to 7.0E-0.5 emu, forming an obvious linear structure. It is also proved that our new linear iron-nitride clusters will maintain good stability with the improvement of nitriding efficiency.PACS: 07.79.Cz; 81.15.-z; 75.75.Fk

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Formation Mechanism and Chirality Evolution of Chiral Carbon Dots Prepared via Radical Assisted Synthesis at Room Temperature

Nanoscale ◽

10.1039/d1nr01927a ◽

2021 ◽

Author(s):

Lorenzo Branzi ◽

Giacomo Lucchini ◽

Elti Cattaruzza ◽

Nicola Pinna ◽

Alvise Benedetti ◽

...

Keyword(s):

Thermal Treatment ◽

Formation Mechanism ◽

Carbon Dots ◽

Room Temperature ◽

Chiral Carbon

We report on a Cu(II) catalyzed process for the production of cysteine based chiral carbon dots, the process does not require any thermal treatment and the carbon dots formation is...

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01232k ◽

2021 ◽

Author(s):

Yuanyuan Cao ◽

Sha Zhu ◽

Julien Bachmann

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Two Dimensional ◽

Molecular Precursors ◽

Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION

International Journal of Nanoscience ◽

10.1142/s0219581x12400248 ◽

2012 ◽

Vol 11 (04) ◽

pp. 1240024 ◽

Cited By ~ 4

Author(s):

N. JOUVET ◽

M. A. BOUNOUAR ◽

S. ECOFFEY ◽

C. NAUENHEIM ◽

A. BEAUMONT ◽

...

Keyword(s):

Room Temperature ◽

Memory Cell ◽

Atomic Layer ◽

Cmos Process ◽

3D Integration ◽

Simulation Tools ◽

Layer Deposition ◽

Recent Developments ◽

Sram Memory ◽

Electrical Characterizations

This work presents a nanodamascene process for a CMOS back-end-of-line fabrication of metallic single electron transistor(SET), together with the use of simulation tools for the development of a SET SRAM memory cell. We show room temperature electrical characterizations of SETs fabricated on CMOS with relaxed dimensions, and simulations of a SET SRAM memory cell. Using their physical characteristics achievable through the use of atomic layer deposition, it will be demonstrated that it has the potential to operate at temperature up to 398 K, and that power consumption is less than that of equivalent circuit in advanced CMOS technologies. In order to take advantage of both low power SETs and high CMOS drive efficiency, a hybrid 3D SET CMOS circuit is proposed.

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Purification of Eucalyptus globulus water prehydrolyzates using the HiTAC process (high-temperature adsorption on activated charcoal)

Holzforschung ◽

10.1515/hf.2011.065 ◽

2011 ◽

Vol 65 (4) ◽

Cited By ~ 15

Author(s):

Jenny Sabrina Gütsch ◽

Herbert Sixta

Keyword(s):

High Temperature ◽

Room Temperature ◽

Adsorption Process ◽

Value Added ◽

Sustainable Utilization ◽

Pulp And Paper Mills ◽

Paper Mills ◽

Charcoal Adsorption ◽

Increasing Temperature ◽

Value Added Products

Abstract The implementation of biorefinery concepts into existing pulp and paper mills is a key step for a sustainable utilization of the natural resource wood. Water prehydrolysis of wood is an interesting process for the recovery of xylo-oligosaccharides and derivatives thereof, while at the same time cellulose is preserved to a large extent for subsequent dissolving pulp production. The recovery of value-added products out of autohydrolyzates is frequently hindered by extensive lignin precipitation, especially at high temperatures. In this study, a new high-temperature adsorption process (HiTAC process) was developed, where lignin is removed directly after the autohydrolysis, which enables further processing of the autohydrolyzates. The suitability of activated charcoals as a selective adsorbent for lignin under process-relevant conditions (150 and 170°C) has not been considered up to now, because former experiments showed decreasing efficiency of charcoal adsorption of lignin with increasing temperature in the range 20–80°C. In contrast to these results, we demonstrated that the adsorption of lignin at 170°C directly after autohydrolysis is even more efficient than after cooling the hydrolyzate to room temperature. The formation of lignin precipitation and incrustations can thus be efficiently prevented by the HiTAC process. The carbohydrates in the autohydrolysis liquor remain unaffected over a wide charcoal concentration range and can be further processed to yield valuable products.

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Direct Nanoscale Patterning by Atomic Manipulation

MRS Proceedings ◽

10.1557/proc-380-143 ◽

1995 ◽

Vol 380 ◽

Cited By ~ 1

Author(s):

Craig T. Salling

Keyword(s):

Scanning Tunneling Microscope ◽

Room Temperature ◽

Atomic Layer ◽

Sample Surface ◽

Atomic Scale ◽

Scanning Tunneling ◽

Nanoscale Patterning ◽

Direct Patterning ◽

Scale Structures ◽

Atomic Manipulation

ABSTRACTThe ability to create atomic-scale structures with the scanning tunneling microscope (STM) plays an important role in the development of a future nanoscale technology. I briefly review the various modes of STM-based fabrication and atomic manipulation. I focus on using a UHV-STM to directly pattern the Si(001) surface by atomic manipulation at room temperature. By carefully adjusting the tip morphology and pulse voltage, a single atomic layer can be removed from the sample surface to define features one atom deep. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Trenches ∼3 nm wide and 2–3 atomic layers deep can be created with less stringent control of patterning parameters. Direct patterning provides a straightforward route to the fabrication of nanoscale test structures under UHV conditions of cleanliness.

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Formation Mechanism and Photoelectric Properties of Al2O3 Film based on Atomic Layer Deposition

Applied Surface Science ◽

10.1016/j.apsusc.2021.151419 ◽

2021 ◽

pp. 151419

Author(s):

Bin Wei ◽

Huimin Chen ◽

Wenqiang Hua ◽

Minyu Chen ◽

Xingwei Ding ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Formation Mechanism ◽

Atomic Layer ◽

Al2o3 Film ◽

Photoelectric Properties ◽

Layer Deposition

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ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2866598 ◽

2018 ◽

Vol 65 (10) ◽

pp. 4513-4519

Author(s):

Mei Shen ◽

Triratna P. Muneshwar ◽

Kenneth C. Cadien ◽

Ying Yin Tsui ◽

Douglas W. Barlage

Keyword(s):

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Layer Deposition

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Room temperature Mg reduction of TiO2: formation mechanism and application in photocatalysis

Chemical Communications ◽

10.1039/c9cc03396c ◽

2019 ◽

Vol 55 (53) ◽

pp. 7675-7678 ◽

Cited By ~ 6

Author(s):

Di Zu ◽

Zhongfei Xu ◽

Ao Zhang ◽

Haiyang Wang ◽

Hehe Wei ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxides ◽

Formation Mechanism ◽

Room Temperature ◽

Oxygen Vacancies ◽

Oxide Structure

A Mg/HCl infiltrated metal oxide structure was designed as a facile approach for implanting oxygen vacancies and H atoms into metal oxides.

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Impurity and Stoichiometry Control in Atomic Layer Epitaxy

MRS Proceedings ◽

10.1557/proc-262-143 ◽

1992 ◽

Vol 262 ◽

Author(s):

H. Yokoyama ◽

K. Ikuta ◽

N. Inoue

Keyword(s):

Point Defects ◽

Resonant Tunneling ◽

Room Temperature ◽

Defect Density ◽

Atomic Layer ◽

Negative Resistance ◽

Atomic Layer Epitaxy ◽

Tunneling Diode ◽

Order Of Magnitude ◽

Stoichiometry Control

ABSTRACTWe investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.

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Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽

10.21820/23987073.2020.5.16 ◽

2020 ◽

Vol 2020 (5) ◽

pp. 16-18

Author(s):

Fumihiko Hirose

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Graduate School ◽

Room Temperature ◽

Atomic Layer ◽

Science And Engineering ◽

Layer Deposition ◽

Potential Applications ◽

Properties Of Materials ◽

Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

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