scholarly journals DVCC-based Low-power RF Filter with 32 nm CNFETs

2021 ◽  
Author(s):  
Shailendra Tripathi ◽  
Amit Mahesh Joshi
Keyword(s):  
Low Power ◽  
Analog Circuits ◽  
Satellite Communication ◽  
Supply Voltage ◽  
Wide Band ◽  
Rf Receiver ◽  
Rf Filter ◽  
Low Supply Voltage ◽  
Differential Voltage Current Conveyor ◽  
Carbon Nanotube Fet

Abstract This work presents a wide-band active filter for RF receiver. The design uses Carbon Nanotube-FET (CNFET) based differential voltage current conveyor (DVCC) for the implementation of the proposed filter. The filter is designed to operate Ku-band frequencies (12-18 GHz), which is used in satellite communication. Additionally, CMOS based circuit and CNFET-based circuit for DVCC are compared for the performance evaluation. HSPICE simulations have been carried out to test the design aspects of the circuit. The CNFET-based circuit has better results in terms of 60 % reduction in the power consumption and about six times improvement in the bandwidth. The filter utilizes low supply voltage of 0.9 V and consumes 524 µW only. The proposed filter outperforms the existing CMOS-based designs which suggests its usage for low-power high-frequency analog circuits.

Low-Power and Reference-Less Data and Clock Recovery Circuit for Visible Light Receivers

2018 ◽  
Author(s):  
Ming-Cheng Liu ◽  
Paul C.-P. Chao ◽  
Soh Sze Khiong
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Visible Light ◽  
Low Voltage ◽  
Supply Voltage ◽  
Clock And Data Recovery ◽  
Optical Receiver ◽  
Clock Recovery ◽  
Cmos Process ◽  
Rf Receiver

In this paper a low power all-digital clock and data recovery (ADCDR) with 1Mhz frequency has been proposed. The proposed circuit is designed for optical receiver circuit on the battery-less photovoltaic IoT (Internet of Things) tags. The conventional RF receiver has been replaced by the visible light optical receiver for battery-less IoT tags. With this proposed ADCDR a low voltage, low power consumption & tiny IoT tags can be fabricated. The proposed circuit achieve the maximum bandwidth of 1MHz, which is compatible with the commercial available LED and light sensor. The proposed circuit has been fabricated in TSMC 0.18um 1P6M standard CMOS process. Experimental results show that the power consumption of the optical receiver is approximately 5.58uW with a supply voltage of 1V and the data rate achieves 1Mbit/s. The lock time of the ADCDR is 0.893ms with 3.31ns RMS jitter period.

Wide band and low supply voltage ICs for satellite tuner unit

1992 ◽  
Vol 38 (3) ◽  
pp. 402-409
Author(s):  
A. Yamamoto ◽  
M. Noda ◽  
T. Nagashima ◽  
I. Akitake ◽  
M. Oga ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Wide Band ◽  
Low Supply Voltage

LOW VOLTAGE, LOW POWER CHEBYSHEV FILTER IN 0.18 μm CMOS TECHNOLOGY

2013 ◽  
Vol 22 (07) ◽  
pp. 1350053 ◽  
Author(s):  
S. REKHA ◽  
T. LAXMINIDHI
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Transconductance Amplifier ◽  
Low Pass ◽  
Unity Gain ◽  
Design Centering ◽  
Low Supply Voltage

This paper presents an active-RC continuous time filter in 0.18 μm standard CMOS technology intended to operate on a very low supply voltage of 0.5 V. The filter designed, has a 5th order Chebyshev low pass response with a bandwidth of 477 kHz and 1-dB passband ripple. A low-power operational transconductance amplifier (OTA) is designed which makes the filter realizable. The OTA uses bulk-driven input transistors and feed-forward compensation in order to increase the Dynamic Range and Unity Gain Bandwidth, respectively. The paper also presents an equivalent circuit of the OTA and explains how the filter can be modeled using descriptor state-space equations which will be used for design centering the filter in the presence of parasitics. The designed filter offers a dynamic range of 51.3 dB while consuming a power of 237 μW.

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

scholarly journals A CURRENT-MODE RMS-TO-DC CONVERTER BASED ON TRANSLINEAR PRINCIPLE

2015 ◽  
pp. 171-174
Author(s):  
MOHAMMAD HADI DANESH ◽  
SASAN NIKSERESHT ◽  
MAHYAR DEHDAST
Keyword(s):  
Low Power ◽  
High Performance ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Input Range ◽  
Low Supply Voltage

In this paper a low-power current-mode RMS-to-DC converter is proposed. The proposed converter includes absolute value circuit, squarer/divider circuit, low-pass filter and square root circuit which employ CMOS transistors operating in weak inversion region. The RMS-to-DC converter has low power consumption (<1μW), low supply voltage (0.9V), wide input range (from 50 nA to 500 nA), low relative error (<3 %), and low circuit complexity. Comparing the proposed circuit with two other current-mode circuits shows that the former outperforms the latters in terms of power dissipation, supply voltage, and complexity. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

scholarly journals A CMOS CURRENT-MODE LOW POWER RMS-TO-DC CONVERTER

2015 ◽  
pp. 210-214
Author(s):  
MOHAMMAD HADI DANESH ◽  
MAHYAR DEHDAST ◽  
ABDOLGHANI AREKHI ◽  
AMIN EMAMI FARD
Keyword(s):  
Low Power ◽  
High Performance ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Input Range ◽  
Low Supply Voltage

In this paper a low-power current-mode RMS-to-DC converter is proposed. The converter includes two-quadrant squarer/divider and the first-order low-pass filter cell, both of them use MOS translinear loops. The RMS-to-DC converter has low power consumption (< 0.75μW), low supply voltage (0.8 V), wide input range (from 40 nA to 500 nA), low relative error (< 3 %), and low circuit complexity. Comparing the proposed circuit with two other current-mode circuits shows that the former outperforms the latters in terms of power dissipation, supply voltage, and complexity. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

scholarly journals A Switched-MOSFET Programmable Low-Voltage Filter

2004 ◽  
Vol 1 (1) ◽  
pp. 32-37
Author(s):  
Luís Cléber C. Marques ◽  
Wouter A. Serdijn
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Process ◽  
Total Current ◽  
Sampled Data ◽  
Current Consumption ◽  
Digitally Programmable ◽  
Low Supply Voltage

This paper describes a digitally programmable low-voltage low-power analogue filter that can be used in hearing-aid circuits. The filter employs the recently introduced switched-MOSFET technique, a sampled-data technique suitable for low supply voltage operation since it avoids the conduction gap of the switches and does not need any dedicated process. The filter was implemented using the DIMES 1.6μm CMOS process and achieves 64 dB dynamic range. The total current consumption, drawn from a 2.2V supply, equals 93μA.

scholarly journals Robust 12T Sram Cell Using 45nm Technology

2020 ◽  
pp. 170-174
Author(s):  
N. Geetha Rani ◽  
N. Jyothi ◽  
P. Leelavathi ◽  
P. Deepthi Swarupa Rani ◽  
S. Reshma
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Supply ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Leakage Power ◽  
Sram Cell ◽  
Static Power ◽  
Low Supply Voltage ◽  
Multi Core Processor

SRAM cells are used in many applications such as micro and multi core processor. SRAM cell improves both read stability and write ability at low supply voltage. The objective is to reduce the power dissipation of a novel low power 12T SRAM cell. This method removes half-select issue in 6T and 9T SRAM cell. This work proposes new functional low-power designs of SRAM cells with 6T, 9T and 12 transistors which operate at only 0.4V power supply in sub-threshold operation at 45 nm technology. The leakage power consumption of the proposed SRAM cell is thereby reduced compared to that of the conventional six-transistor (6T) SRAM cell. 12T cell obtains low static power dissipation.

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