scholarly journals RF/Analog and Linearity Performance Evaluation of Lattice-Matched ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

2021 ◽  
Author(s):  
Abdul Naim Khan ◽  
KANJALOCHAN JENA ◽  
Soumya Ranjan Routray ◽  
Gaurav Chatterjee
Keyword(s):  
High Frequency ◽  
Figure Of Merit ◽  
Superior Performance ◽  
Si Substrate ◽  
Gan Hemt ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Tcad Simulation ◽  
High Transconductance ◽  
Lattice Matched

Abstract In this article, the Authors have demonstrated and analyzed various analog/RF and linearity performance of a AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based TCAD simulation. Specifically, a Al2O3 dielectric GR-MOSHEMT has shown tremendous potential in terms of AC/DC figure of merits (FOM’s) such as low leakage current, high transconductance, high Ion/Ioff current ratio and excellent linear properties corresponding to conventional AlGaN/GaN HEMT and MOSHEMT. The figure-of-merit metrics such as VIP2, VIP3, IIP3 and IDM3 are performed for different drain to source voltages (VDS) of 2.5V, 5V and 10V. All the modeling and simulation results are generated by Commercial Silvaco TCAD and found to be satisfactory in terms of high frequency and power applications. The present GR-MOSHEMT device shows a superior performance with a threshold voltage of 0.5V, Current density of 888 mA, high transconductance of 225 mS/mm and high unit gain cut-off frequency of 0.91GHz. The results of the developed AlGaN/GaN GR-MOSHEMT considerably improves the device performance and also suitable for high power distortion less RF applications.

Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaOxNy Gate Dielectric

2011 ◽  
Author(s):  
T. Sato ◽  
J. Okayasu ◽  
T. Yamanouchi ◽  
T. Yashiro ◽  
J. Suzuki ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Gan Hemt ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

Energies ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 8582
Author(s):  
Jongwoon Yoon ◽  
Jaeyeop Na ◽  
Kwangsoo Kim
Keyword(s):  
Electric Field ◽  
Energy Loss ◽  
High Frequency ◽  
Recovery Time ◽  
Figure Of Merit ◽  
Heterojunction Diode ◽  
Static And Dynamic Characteristics ◽  
Gate Structure ◽  
Tcad Simulation ◽  
Reverse Recovery Time

A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse recovery charge of the IHP-MOSFET decreased by 62.5% and 85.7%, respectively. In addition, a high breakdown voltage (BV) and low maximum oxide electric field (EMOX) could be achieved in the IHP-MOSFET by introducing a p-shield region (PSR) that effectively disperses the electric field in the off-state. The proposed device also exhibited 3.9 times lower gate-to-drain capacitance (CGD) than the C-MOSFET due to the split-gate structure and grounded PSR. As a result, the IHP-MOSFET had electrically excellent static and dynamic characteristics, and the Baliga’s figure of merit (BFOM) and high frequency figure of merit (HFFOM) were increased by 37.1% and 72.3%, respectively. Finally, the switching energy loss was decreased by 59.5% compared to the C-MOSFET.

Comparative Study on Lateral Silicide Growth in Self-Aligned Ti and Co Silicidation: Interaction and Reactivity with SiO2 and Si3N4

1999 ◽  
Vol 564 ◽  
Author(s):  
Ji-Soo Park ◽  
Dong Kyun Sohn ◽  
Jong-Uk Bae ◽  
Yun-Jun Huh ◽  
Jin Won Park
Keyword(s):  
Comparative Study ◽  
Leakage Current ◽  
Si Substrate ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Silicide Growth

AbstractThe interaction and reactivity of Ti and Co with SiO2 and Si3N4 have been investigated. In the case of Ti salicide, SiO2 sidewall spacer showed no lateral silicide overgrowth and low leakage current between gate and source/drain up to silicidation temperature of 750 1C. However, Si3N4 sidewall spacer showed dopant dependence of the lateral silicide growth and leakage current. This discrepancy between SiO2 and Si3N4 and dopant dependence is closely related to the reactivity. For Co, lateral silicide overgrowth is greatly reduced. Instead, Co films on SiO2 and Si3N4 layer were agglomerated by annealing. An annealing at 1050°C caused not only agglomeration of Co film but penetration of Co agglomerates through the layers. Interestingly, the CoSi2 spike of B type epitaxial and twinned orientation was formed in the Si substrate by the penetrated Co source.

UNSTRAINED InAlN/GaN HEMT STRUCTURE

2004 ◽  
Vol 14 (03) ◽  
pp. 785-790 ◽  
Author(s):  
M. NEUBURGER ◽  
T. ZIMMERMANN ◽  
E. KOHN ◽  
A. DADGAR ◽  
F. SCHULZE ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Si Substrate ◽  
Output Current ◽  
Charge Densities ◽  
Gan Hemt ◽  
Class A ◽  
Saturated Output Power ◽  
Sheet Charge ◽  
Bias Point ◽  
Lattice Matched

InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization. In this configuration the sheet charge density is only induced by spontaneous polarization. First experimental results of unpassivated undoped samples realized on 111- Si substrate exceed a DC output current density of 1.8 A/mm for a gate length of 0.5 μm. Small signal measurements yield a f t = 26 GHz and f max = 14 GHz , still limited by the residual conductivity of the Si -substrate. A saturated output power at 2 GHz in class A bias point yielded a density of 4.1 W/mm at V DS = 24 V .

Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues

2003 ◽  
Vol 798 ◽  
Author(s):  
Pradeep Rajagopal ◽  
John C. Roberts ◽  
J. W. Cook ◽  
J. D. Brown ◽  
Edwin L. Piner ◽  
...  
Keyword(s):  
High Frequency ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
Small Signal ◽  
Si Substrate ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Mocvd Growth ◽  
Gan Hemts

ABSTRACTAlGaN/GaN based high power, high frequency high electron mobility transistors (HEMTs) have been in development for over a decade. Although much progress has been made, AlGaN/GaN HEMT technology has yet to be commercialized. The choice of silicon as the substrate for the growth of GaN-based epi layers will enable commercialization of AlGaN/GaN based HEMTs, because of its maturity, scalability, reproducibility and economy. One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the understanding of parasitic losses that can adversely impact the RF device performance. The effect of the III-N MOCVD process on the resistivity of the Si substrate, and correlations between the Si substrate resistivity and AlGaN/GaN HEMT RF characteristics are presented. Optimization of the MOCVD growth process led to a reduction in parasitic doping of the Si substrate. This resulted in the following improvements: (a) small signal gain increased from 17 to 21dB, (b) the cut-off frequency increased from 7 to 11GHz and (c) the maximum frequency of oscillation improved from 12 to 20GHz. This optimized process will enhance performance of AlGaN/GaN HEMTs at higher frequencies.

Aluminum electrolytic capacitors for tablet PC

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740011
Author(s):  
Longchun Liu ◽  
Liangwei Dong ◽  
Qinglong Li ◽  
Xiangyang Xu
Keyword(s):  
High Frequency ◽  
Temperature Stability ◽  
Operating Conditions ◽  
Electrolytic Capacitor ◽  
Tablet Pc ◽  
Durability Test ◽  
Aluminum Electrolytic Capacitor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Aluminum Electrolytic Capacitors

Based on the operating conditions of tablet PC, this paper presents the design of a long load life aluminum electrolytic capacitor. Due to the key technology breakthrough of electrolyte with low resistance and excellent temperature stability, the capacitor boasts low leakage current, low impedance, high frequency, high ripple resistance and high temperature resistance. In the meantime, it can pass 5000 h of durability test with load at 105[Formula: see text]C. The aluminum electrolytic capacitor can be used in tablet PC with long load life.

Formation of HfSiON/SiO/sub 2//Si-substrate gate stack with low leakage current for high-performance high-/spl kappa/ MISFETs

2006 ◽  
Vol 53 (4) ◽  
pp. 923-925 ◽  
Author(s):  
M. Yamaguchi ◽  
T. Sakoda ◽  
H. Minakata ◽  
Shiqin Xiao ◽  
Y. Morisaki ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Si Substrate ◽  
Gate Stack ◽  
Low Leakage ◽  
Low Leakage Current

High-performance SiC MOSFET embedded heterojunction diode with electric field protection region

2021 ◽  
Author(s):  
Jongwoon Yoon ◽  
Kwangsoo Kim
Keyword(s):  
Electric Field ◽  
High Frequency ◽  
High Performance ◽  
Figure Of Merit ◽  
High Reliability ◽  
Side Wall ◽  
Heterojunction Diode ◽  
Static Performance ◽  
Simulation Results ◽  
Tcad Simulation

Abstract In this study, we proposed high-performance SiC MOSFET embedded heterojunction diode (HJD) with an electric field protection (EFP) region and analyzed it using a Sentaurus TCAD simulation. The proposed device features an HJD positioned at the trench side wall in the middle of the JFET region and a highly doped EFP region under the P+ polysilicon to features excellent static performance and high reliability. The simulation results revealed that the maximum oxide electric field (EMOX) and the Baliga’s figure-of-merit (BFOM) improved by 54% and 12%, respectively, compared with those of conventional SiC MOSFETs (C-MOSFETs). In addition, the EFP region suppressed the DIBL effect and leakage current in the HJD interface sufficiently. The HJD suppressed the bipolar degradation of the PiN body diode effectively due to its low VF (1.75 V). In addition, the proposed device demonstrated superior reverse-recovery characteristics, thereby improving trr and Qrr by 35% and 57%, respectively, compared to the corresponding values in C-MOSFET. Moreover, the input capacitance (CISS) was reduced by 17.5%, and CGD was reduced by 96%. Therefore, the high-frequency figure-of-merit (HFOM) improved by a factor of 25.8 in terms of RON × CGD. As a result, the proposed device is a promising structure for high-frequency and high-reliability applications.

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