UNSTRAINED InAlN/GaN HEMT STRUCTURE

2004 ◽  
Vol 14 (03) ◽  
pp. 785-790 ◽  
Author(s):  
M. NEUBURGER ◽  
T. ZIMMERMANN ◽  
E. KOHN ◽  
A. DADGAR ◽  
F. SCHULZE ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Si Substrate ◽  
Output Current ◽  
Charge Densities ◽  
Gan Hemt ◽  
Class A ◽  
Saturated Output Power ◽  
Sheet Charge ◽  
Bias Point ◽  
Lattice Matched

InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization. In this configuration the sheet charge density is only induced by spontaneous polarization. First experimental results of unpassivated undoped samples realized on 111- Si substrate exceed a DC output current density of 1.8 A/mm for a gate length of 0.5 μm. Small signal measurements yield a f t = 26 GHz and f max = 14 GHz , still limited by the residual conductivity of the Si -substrate. A saturated output power at 2 GHz in class A bias point yielded a density of 4.1 W/mm at V DS = 24 V .

scholarly journals RF/Analog and Linearity Performance Evaluation of Lattice-Matched ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

2021 ◽  
Author(s):  
Abdul Naim Khan ◽  
KANJALOCHAN JENA ◽  
Soumya Ranjan Routray ◽  
Gaurav Chatterjee
Keyword(s):  
High Frequency ◽  
Figure Of Merit ◽  
Superior Performance ◽  
Si Substrate ◽  
Gan Hemt ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Tcad Simulation ◽  
High Transconductance ◽  
Lattice Matched

Abstract In this article, the Authors have demonstrated and analyzed various analog/RF and linearity performance of a AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based TCAD simulation. Specifically, a Al2O3 dielectric GR-MOSHEMT has shown tremendous potential in terms of AC/DC figure of merits (FOM’s) such as low leakage current, high transconductance, high Ion/Ioff current ratio and excellent linear properties corresponding to conventional AlGaN/GaN HEMT and MOSHEMT. The figure-of-merit metrics such as VIP2, VIP3, IIP3 and IDM3 are performed for different drain to source voltages (VDS) of 2.5V, 5V and 10V. All the modeling and simulation results are generated by Commercial Silvaco TCAD and found to be satisfactory in terms of high frequency and power applications. The present GR-MOSHEMT device shows a superior performance with a threshold voltage of 0.5V, Current density of 888 mA, high transconductance of 225 mS/mm and high unit gain cut-off frequency of 0.91GHz. The results of the developed AlGaN/GaN GR-MOSHEMT considerably improves the device performance and also suitable for high power distortion less RF applications.

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

2017 ◽  
Vol 10 (7) ◽  
pp. 075504 ◽  
Author(s):  
Keisuke Yamane ◽  
Masaya Goto ◽  
Kenjiro Takahashi ◽  
Kento Sato ◽  
Hiroto Sekiguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Substrate ◽  
Tandem Solar Cells ◽  
Lattice Matched

CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application

2021 ◽  
Author(s):  
Po-Chun Yeh ◽  
Po-Tsung Tu ◽  
Hsueh-Hsing Liu ◽  
Chien-Hua Hsu ◽  
Hsin-Yun Yang ◽  
...  
Keyword(s):  
Si Substrate ◽  
Gan Hemt ◽  
Cmos Compatible

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT

2014 ◽  
pp. 175-177
Author(s):  
Apurba Chakraborty ◽  
Saptarshi Ghosh ◽  
Ankush Bag ◽  
Palash Das ◽  
Dhrubes Biswas
Keyword(s):  
Barrier Layer ◽  
Analytical Expression ◽  
Enhancement Mode ◽  
Gan Hemt

Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications

2019 ◽  
Vol 66 (3) ◽  
pp. 1236-1242 ◽  
Author(s):  
Hongliang Zhao ◽  
Lin-An Yang ◽  
Hao Zou ◽  
Xiao-hua Ma ◽  
Yue Hao
Keyword(s):  
Barrier Layer ◽  
Differential Mobility ◽  
Gan Hemt ◽  
Terahertz Applications

scholarly journals Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Yanli Liu ◽  
Xifeng Yang ◽  
Dunjun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Stress State ◽  
Raman Scattering ◽  
Barrier Layer ◽  
Algan Layer ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate

2001 ◽  
Vol 79 (9) ◽  
pp. 1306-1308 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Atsushi Utsumi ◽  
Kenji Momose ◽  
Yuzo Furukawa
Keyword(s):  
Quantum Well ◽  
Si Substrate ◽  
Quantum Well Structure ◽  
Lattice Matched

Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiNx / HfO2 Dual Passivation Layer

2015 ◽  
Author(s):  
D.H. Kim ◽  
M.J. Kang ◽  
S.K. Eom ◽  
H.Y. Cha ◽  
K.S. Seo
Keyword(s):  
Passivation Layer ◽  
Si Substrate ◽  
Gan Hemt

High Breakdown Voltage GaN Power HEMT on Si Substrate

2013 ◽  
Vol 805-806 ◽  
pp. 948-953
Author(s):  
Cen Kong ◽  
Jian Jun Zhou ◽  
Jin Yu Ni ◽  
Yue Chan Kong ◽  
Tang Sheng Chen
Keyword(s):  
Breakdown Voltage ◽  
Low Cost ◽  
Electronic Devices ◽  
Power Electronic ◽  
Si Substrate ◽  
Field Plate ◽  
Maximum Current Density ◽  
Gan Hemt ◽  
Maximum Current ◽  
State Resistance

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

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