scholarly journals Conduction and Resistive Switching Memory in Al/MoS2+PVP/Ag Devices Fabricated using Drop cast Method

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Tebogo Sfiso Mahule ◽  
Shuying Wu ◽  
Vijaya Srinivasu Vallabhapur
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Strong Dependence ◽  
Conductive Filament ◽  
Bipolar Resistive Switching ◽  
Active Layers ◽  
Ag Electrodes ◽  
Positive Voltage ◽  
Switching Mode ◽  
Free Drop

Abstract Resistive switching in MoS2 embedded PVP composite-based ReRAM with Al and Ag electrodes is reported. A cost-free drop cast method was used to deposit active layers consisting of 30 wt%, 40 wt%, and 70 wt% of MoS2 in PVP. Each system exhibited unique electroforming and switching mode. Asymmetrical bipolar resistive switching occurring only in the positive voltage bias, a typical bipolar resistive switching and a typical ‘O-type’ resistive switching were observed for the 30 wt%, 40 wt%, and 70 wt% systems, respectively. Furthermore, injection of charge carriers at the electrode/active layer interface and electrochemical metalization mechanisms drove the formation of a nanoscale conductive filament in the device A and B. On the other hand, we attributed the conduction mechanism of device C to hopping conduction. Our results demonstrate the behaviour of MoS2 embedded PVP composite-based ReRAM has a strong dependence on the amount of MoS2 and that both the switching and conduction mechanism can be exploited by controlling the amount of MoS2 in the composite.

Resistive Switching in CdTe/CdSe Core–Shell Quantum Dots Embedded Chitosan-Based Memory Devices

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Core Shell ◽  
Cdse Core ◽  
Active Layers ◽  
Ag Electrodes ◽  
Exponential Decrease ◽  
Conductive Bridge ◽  
Bipolar Memory ◽  
State Resistance

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550031 ◽  
Author(s):  
PRANAB KUMAR SARKAR ◽  
ASIM ROY
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Cell ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Switching Performance ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Compliance ◽  
Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3for Bipolar Resistive Switching

2011 ◽  
Vol 50 (1R) ◽  
pp. 011501 ◽  
Author(s):  
Myoung-Sun Lee ◽  
Jung-Kyu Lee ◽  
Hyun-Sang Hwang ◽  
Hyung-Cheol Shin ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bipolar Resistive Switching

scholarly journals Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1049
Author(s):  
Nayan C. Das ◽  
Minjae Kim ◽  
Jarnardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Magnesium Fluoride ◽  
Data Retention ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Operational Characteristics ◽  
Switching Mode ◽  
Limited Conduction ◽  
Resistive Switching Mechanism

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

2017 ◽  
Vol 101 ◽  
pp. 172-179 ◽  
Author(s):  
Fatih Gul ◽  
Hasan Efeoglu
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Bipolar Resistive Switching

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

2010 ◽  
Vol 96 (15) ◽  
pp. 152909 ◽  
Author(s):  
Min Hwan Lee ◽  
Kyung Min Kim ◽  
Gun Hwan Kim ◽  
Jun Yeong Seok ◽  
Seul Ji Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Impedance Spectroscopy ◽  
Resistive Switching ◽  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Tio2 Thin Films ◽  
Bipolar Resistive Switching ◽  
Electrical Conduction Mechanism

scholarly journals Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoyu Zhou ◽  
Yuan Luo ◽  
Aidong Li ◽  
Di Wu
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Conductive Filament ◽  
Bipolar Resistive Switching ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Diode Behavior ◽  
And Migration ◽  
Switching Characteristics ◽  
Pzt Ferroelectric Thin Films

Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3substrates buffered with La0.7Sr0.3MnO3(LSMO) electrodes. AmorphousTiOxthin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary withTiOxdeposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in theTiOxlayer.

Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3for Bipolar Resistive Switching

2011 ◽  
Vol 50 ◽  
pp. 011501 ◽  
Author(s):  
Myoung-Sun Lee ◽  
Jung-Kyu Lee ◽  
Hyun-Sang Hwang ◽  
Hyung-Cheol Shin ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bipolar Resistive Switching

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

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