Abnormal Microstructure Evolution Behaviors of Annealed Ag-Co Alloy Film on Flexible Polyimide Substrates

2020 ◽  
Author(s):  
Yuanjiang Lv ◽  
Xin Xin Lian ◽  
Haoliang Sun ◽  
Xiaoxue Huang ◽  
Guang xin Wang
Keyword(s):  
Microstructure Evolution ◽  
Alloy Film

scholarly journals Different Effects of Annealing on Microstructure Evolution and SERS Performance for Cu–Cr Alloy Film and Bulk Alloy

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2990 ◽  
Author(s):  
Xiaoxue Huang ◽  
Haoliang Sun ◽  
Jun Shen ◽  
Kai Cui ◽  
Guangxin Wang
Keyword(s):  
Residual Stress ◽  
Microstructure Evolution ◽  
Bulk Material ◽  
Alloy Film ◽  
Atomic Diffusion ◽  
Chromium Alloy ◽  
Bulk Alloy ◽  
Significant Difference ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering

Copper–chromium alloy film and Cu–Cr bulk alloy were obtained using magnetron sputtering and vacuum smelting. Experimental results indicated that Cu–Cr bulk alloy and alloy films having different residual stress and atomic diffusion exhibit a significant difference in microstructure evolution behaviors after annealing. Numerous polyhedral Cu particles and dendritic Cr particles precipitated on the surface of annealed Cu–Cr alloy film and as–cast Cu–Cr bulk alloy, respectively. Cu particles were formed under the driving of energy and residual stress in the film. The effect of annealing temperature and Cr content on the size and quantity of Cu particles is discussed. Cr particles precipitated on the bulk alloy due to the low solid solubility of Cr in Cu, and the crystallinity of Cu grains promoted the diffusion of Cr atoms. The surface–enhanced Raman scattering (SERS) intensity of the Cu–14.6%Cr alloy film was obviously higher than that of the Cu–14.2%Cr bulk alloy. The particles/film composite structure possessed the appropriate particle number, surface roughness, and interstitial gap, as opposed to the bulk material, to effectively improve SERS enhancement.

Abnormal Microstructure Evolution Behaviors of Annealed Ag-18.9 at% Co Alloy Film on Flexible Polyimide Substrates

2021 ◽  
pp. 101614
Author(s):  
YuanJiang Lv ◽  
XinXin Lian ◽  
HaoLiang Sun ◽  
GuangXin Wang ◽  
Akiyoshi Osaka
Keyword(s):  
Microstructure Evolution ◽  
Alloy Film

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Microstructure Evolution Induced by Ultraviolet Light Irradiation in Ti-Si Codoped Diamond-like Carbon films

2014 ◽  
Vol 29 (9) ◽  
pp. 941
Author(s):  
JIANG Jin-Long ◽  
WANG Qiong ◽  
HUANG Hao ◽  
ZHANG Xia ◽  
WANG Yu-Bao ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Microstructure Evolution ◽  
Carbon Films ◽  
Light Irradiation ◽  
Diamond Like Carbon ◽  
Ultraviolet Light Irradiation

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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