scholarly journals Review of intense-ion-beam propagation with a view toward measuring ion energy

1982 ◽  
Author(s):  
M. Garcia
Keyword(s):  
Ion Beam ◽  
Beam Propagation ◽  
Ion Energy

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Ion Bombardment Effect on the Hardness of Ti(C,N,O) Films Prepared by Ion Beam Controlled Deposition (IBCD)

1992 ◽  
Vol 279 ◽  
Author(s):  
Chen Youshan ◽  
Sun Yilin ◽  
Zhang Fumin ◽  
Mou Haichuan ◽  
Tao Wei ◽  
...  
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Advanced Technology ◽  
Preferential Growth ◽  
Ion Energy ◽  
Lattice Constants ◽  
Film Hardness ◽  
Pure Compounds ◽  
Controlled Deposition

Ion beam controlled deposition (IBCD) or ion beam assisted deposition (IB AD) of Ti(C,N,O) films has been investigated much in the last decade for both the advantage of this advanced technology and the promising properties of such materials. Ti(C,N,O) films are various solid solutions of interstitial compounds TiC, TiN and TiO of F.C.C structure with lattice constants lying between the values of the pure compounds. Some content of oxygen improves their wear resistance due to the lower fn;e enthalpies of such films in comparison with pure TiC and TiN films [1]. Many so-synthesizcd titanium carbide and titanium nitride films reported in published papers were actually of this sort as they often had more or less oxygen content from residual gas in vacuum. A number of papers were contributed to depict the texture and composition dependence of film on the arrival ratio of assisting ions versus deposited atoms (AR) as well as their mechanical properties [2–6]. However, the film formation mechanism in IBCD isn't quite clear yet, especially for cases with assisting ion energy of several to tens of keV. During a course to synthesize Ti(C,N,O) films by IBCD with the two beam technique, datum were accumulated. Based on a part of it, a previous paper on ion beam governed preferential growth in IBCD has been published [7]. This paper was aimed to search for the origin of ion bombardment effect on film hardness.

Dry Etching of Indium Phosphide

1992 ◽  
Vol 262 ◽  
Author(s):  
P. Bond ◽  
P. Sengupta ◽  
Kevin G. Orrman-Rossiter ◽  
G. K. Reeves ◽  
P. J. K. Paterson
Keyword(s):  
Indium Phosphide ◽  
Etch Rate ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Building Blocks ◽  
Photonic Devices ◽  
Ion Energy ◽  
Growth Area ◽  
Argon Ion ◽  
Main Growth

ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices. Traditional wet etching techniques have often proved to be inadequate for the required anisotropie removal of material. This paper presents the results of etching semi-insulating InP (100) using a combination of an Argon ion beam and a reactive gas, CCl2F2 (Freon 12). It was found that the etch rate was enhanced by increasing the ion energy and by the addition of CCl2F2. Auger electron spectroscopy revealed that the increased etch rate was accompanied by an increase in the surface indium concentration and at low ion beam energies carbon build-up retarded the etch rate. The optimum etch angle to fabricate 3μm waveguides was found to be 22° to the surface normal, however Schottky contacts to these structures were unsuccessful.

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1355-1360 ◽  
Author(s):  
UDAY LANKE ◽  
ANNETTE KOO ◽  
SIMON GRANVILLE ◽  
JOE TRODAHL ◽  
ANDREAS MARKWITZ ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Nuclear Reaction Analysis ◽  
Ion Energy ◽  
X Ray ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

Sign in / Sign up

Export Citation Format

Share Document