Dry Etching of Indium Phosphide

1992 ◽  
Vol 262 ◽  
Author(s):  
P. Bond ◽  
P. Sengupta ◽  
Kevin G. Orrman-Rossiter ◽  
G. K. Reeves ◽  
P. J. K. Paterson
Keyword(s):  
Indium Phosphide ◽  
Etch Rate ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Building Blocks ◽  
Photonic Devices ◽  
Ion Energy ◽  
Growth Area ◽  
Argon Ion ◽  
Main Growth

ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices. Traditional wet etching techniques have often proved to be inadequate for the required anisotropie removal of material. This paper presents the results of etching semi-insulating InP (100) using a combination of an Argon ion beam and a reactive gas, CCl2F2 (Freon 12). It was found that the etch rate was enhanced by increasing the ion energy and by the addition of CCl2F2. Auger electron spectroscopy revealed that the increased etch rate was accompanied by an increase in the surface indium concentration and at low ion beam energies carbon build-up retarded the etch rate. The optimum etch angle to fabricate 3μm waveguides was found to be 22° to the surface normal, however Schottky contacts to these structures were unsuccessful.

Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 247-252
Author(s):  
Narasimhan Srinivasan ◽  
Katrina Rook ◽  
Ivan Berry ◽  
Binyamin Rubin ◽  
Frank Cerio
Keyword(s):  
Beam Energy ◽  
Etch Rate ◽  
Incidence Angle ◽  
Ion Beam ◽  
Ion Energy ◽  
Beam Voltage ◽  
Ion Energies ◽  
Sidewall Angle ◽  
Etch Rates

ABSTRACTWe investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.

Properties of Al2O3 films prepared by argon ion assisted deposition

1994 ◽  
Vol 9 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
Mansour S. Al-Robaee ◽  
Ghanashyam M. Krishna ◽  
G.N. Subanna ◽  
Narasimha K. Rao ◽  
S. Mohan
Keyword(s):  
Refractive Index ◽  
Current Density ◽  
Ion Beam ◽  
Ion Energy ◽  
Argon Ions ◽  
Beam Parameters ◽  
Substrate Temperatures ◽  
Argon Ion ◽  
Al2o3 Films ◽  
Deposited Films

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 333-338 ◽  
Author(s):  
Anis M. Saad ◽  
Olga V. Zinchuk ◽  
N.A. Drozdov ◽  
A.K. Fedotov ◽  
A.V. Mazanik
Keyword(s):  
Low Temperature ◽  
Spectral Region ◽  
Ion Beam ◽  
Surface Region ◽  
Near Surface ◽  
Ion Energy ◽  
Ion Beam Treatment ◽  
P Type ◽  
20 Nm ◽  
Argon Ion

The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet (UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.

Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids

2018 ◽  
Author(s):  
M. J. Campin ◽  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
P. E. Fischione ◽  
L. A. Giannuzzi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Carbon Support ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Narrow Beam ◽  
Ion Milling ◽  
Preparation Methods ◽  
Argon Ion

Abstract The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (< 1 keV), narrow-beam (< 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.

The Effect of CU Intermediate Layer made by IBAD on the CU Surface Film of E–Gun Evaporation

1992 ◽  
Vol 279 ◽  
Author(s):  
Jie Yang ◽  
Chen Wang ◽  
Kun Tao ◽  
Yudien Fan
Keyword(s):  
Crystallographic Texture ◽  
Intermediate Layer ◽  
Surface Film ◽  
Ion Beam ◽  
Electron Gun ◽  
Surface Films ◽  
Interface Adhesion ◽  
Ion Energy ◽  
Intermediate Layers ◽  
Argon Ion

ABSTRACTCu intermediate layers (IL) by argon ion beam assisted deposition(IBAD) between substrates and Cu surface films (SF) deposited by electron-gun were made and their effect on the microstructure and properties of the Cu surface films were studied. Primary deposition variables were ion energy and substrates type. Trends in crystallographic texture, crystal-size and resistivity of Cu surface films with different IBAD layers on different substrates are significantly different. Analyzed by RBS, and XRD, the IBAD intermediate layer changed the crystallinity of Cu SF and increased the interface adhesion between the Cu SF and substrate. The experimental results shows that films with lower resistivity and better interface adhesion could be obtained by IBAD- PVD combined technique. The mechanism of crystallographic texture formation is also discussed.

Chemically Assisted Ion Beam Etching (CAIBE)- a New Technique for TEM Specimen Preparation of Materials

1990 ◽  
Vol 199 ◽  
Author(s):  
Reza Alani ◽  
Joseph Jones ◽  
Peter Swann
Keyword(s):  
Ion Beam ◽  
Semiconductor Industry ◽  
Active Species ◽  
Inert Gas ◽  
New Technique ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Ion Beam Etching ◽  
Specimen Holder ◽  
Argon Ion

ABSTRACTChemically assisted ion beam etching (CAIBE) is widely practiced in the semiconductor industry. In the electron microscopy field, the CAIBE technique offers a new method for preparing specimens that are difficult to make by conventional inert gas milling techniques, e.g. indium containing type III-V compound semiconductors. CAIBE employs a collimated, molecular beam of a reactive species, e.g. iodine in combination with a conventional inert gas fast atom beam for thinning TEM specimens. CAIBE should not be confused with reactive ion beam etching (RIBE) which takes a chemically active species (e.g. iodine) and converts it into a beam of fast ions directed at the sample. CAIBE has three major advantages over (RIBE): i) corrosion of the ion gun components does not occur, ii) much smaller quantities of reactive gas are required and hence pump maintenance and pollution problems are minimized, iii) a wider range of chemicals may be used. Superior results are obtained if CAIBE is done on only one side of the specimen at a time. This is achieved using a new type of specimen holder post which enables very low angle milling and minimizes specimen contamination by sputtering from the holder. This new technique is described and results from iodine CAIBE milling, iodine RIBE milling and argon ion milling are compared for InP, InSb and GaAs as well as metals like tungsten. Also, the beneficial effects of very low angle (∼1°) argon ion milling in preparing specimens of silicide containing Si based IC wafers is reported.

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

The microstructure of a TiB2/Ti-47 Al composite material

1989 ◽  
Vol 47 ◽  
pp. 674-675
Author(s):  
O. Popoola ◽  
A.H. Heuer ◽  
P. Pirouz
Keyword(s):  
Composite Material ◽  
Ion Beam ◽  
Chemical Properties ◽  
Intermetallic Alloys ◽  
Transmission Electron ◽  
Diamond Polishing ◽  
Al Composite ◽  
The Matrix ◽  
Argon Ion ◽  
And Chemical Properties

The addition of fibres or particles (TiB2, SiC etc.) into TiAl intermetallic alloys could increase their toughness without compromising their good high temperature mechanical and chemical properties. This paper briefly discribes the microstructure developed by a TiAl/TiB2 composite material fabricated with the XD™ process and forged at 960°C.The specimens for transmission electron microscopy (TEM) were prepared in the usual way (i.e. diamond polishing and argon ion beam thinning) and examined on a JEOL 4000EX for microstucture and on a Philips 400T equipped with a SiLi detector for microanalyses.The matrix was predominantly γ (TiAl with L10 structure) and α2(TisAl with DO 19 structure) phases with various morphologies shown in figure 1.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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