Моделирование переходных процессов в полупроводниковых приборах на основе 4H-SiC (учет неполной ионизации легирующих примесей в модуле ATLAS программного пакета SILVACO TCAD)
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AbstractTransient process in a resistor–capacitor (RC) circuit with a reverse-biased 4 H -SiC p – n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4 H -SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.
2013 ◽
Vol 392
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pp. 693-696
1994 ◽
Vol 208
(4)
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pp. 279-287
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2003 ◽
Vol 217
(8)
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pp. 861-869
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1975 ◽
Vol 41
(490)
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pp. 1060-1065
2015 ◽
Vol 815
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pp. 364-368
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