Влияние давления при эпитаксии на свойства слоев GaN

Growth of GaN layers by MOVPE on sapphire substrates at various pressures, including above atmospheric, was studied. It is shown that epitaxy at higher pressures does not change the crystal perfection of the layers, the electron mobility, and the impurities incorporation, but leads to the formation of a surface with a smaller lateral scale of inhomogeneities. The epitaxy pressure also affects the ratio of the intensity of the band-edge and impurity-related lines in the photoluminescence spectra and the leakage currents in the reverse-biased Schottky barrier.