scholarly journals Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs

2009 ◽  
Author(s):  
M.K. Husain ◽  
X.V. Li ◽  
C.H. de Groot
Keyword(s):  
Schottky Barrier ◽  
Leakage Currents

scholarly journals High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

2009 ◽  
Vol 56 (3) ◽  
pp. 499-504 ◽  
Author(s):  
Muhammad Khaled Husain ◽  
Xiaoli V. Li ◽  
Cornelis Hendrik de Groot
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Leakage Currents ◽  
High Quality

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

Stress Induced Increased Low Level Leakage in Thin Oxides

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dumin ◽  
J. R. Maddux ◽  
D.-P. Wong
Keyword(s):  
Schottky Barrier ◽  
Stress Measurement ◽  
Tunneling Current ◽  
Schottky Emission ◽  
Leakage Currents ◽  
Gate Oxides ◽  
Low Level ◽  
Tunneling Currents ◽  
Best Fit ◽  
Nordheim Tunneling

ABSTRACTIt has been observed that the low-level, pre-tunneling currents through thin gate oxides increased after the oxides had been stressed at high voltages. The number of traps inside of the oxide generated by the stress has been shown to increase as the 1/3 power of the fluence that had passed through the oxide during the stress. The increases in the low-level, pre-tunneling currents have been shown to be proportional to the number of stress generated traps in the oxide and not to the fluence during the stress. The voltage dependences of the excess low-level leakage currents were stress and measurement polarity dependent. Attempts have been made to fit the voltage dependences of the excess low-level currents to Fowler-Nordheim tunneling, Frenkel-Poole conduction or Schottky barrier lowering. The increase in the portion of the low-level, pre-tunneling current that was not dependent on stress/measurement polarity sequence was best fit using Schottky emission currents. The model that has been developed to describe the increases in the low-level currents has centered on trap-assisted currents through the oxides.

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

2000 ◽  
Vol 640 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Shinji Ogino ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
High Yield ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Bright Spots ◽  
Blocking Voltage ◽  
Voltage Region ◽  
The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

scholarly journals Влияние давления при эпитаксии на свойства слоев GaN

2020 ◽  
Vol 46 (24) ◽  
pp. 3
Author(s):  
А.В. Сахаров ◽  
В.В. Лундин ◽  
Е.Е. Заварин ◽  
С.О. Усов ◽  
П.Н. Брунков ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electron Mobility ◽  
Band Edge ◽  
Photoluminescence Spectra ◽  
Leakage Currents ◽  
Crystal Perfection ◽  
Sapphire Substrates ◽  
Lateral Scale

Growth of GaN layers by MOVPE on sapphire substrates at various pressures, including above atmospheric, was studied. It is shown that epitaxy at higher pressures does not change the crystal perfection of the layers, the electron mobility, and the impurities incorporation, but leads to the formation of a surface with a smaller lateral scale of inhomogeneities. The epitaxy pressure also affects the ratio of the intensity of the band-edge and impurity-related lines in the photoluminescence spectra and the leakage currents in the reverse-biased Schottky barrier.

Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer

1994 ◽  
Vol 340 ◽  
Author(s):  
Bing Yang ◽  
J. C. Chen ◽  
F. S. Choa
Keyword(s):  
Surface Layer ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Great Reduction ◽  
Schottky Barrier Height ◽  
Electrical Measurements ◽  
Leakage Currents ◽  
Inp Surface

ABSTRACTIn this study, we demonstrate the enhancement of n-In0.53Ga0.47A s Schottky barrier height by using a thin (300-1800 Å) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents. Results of the electrical measurements are summarized in table 1. The barrier height of n- In0.53Ga0.47As was increased from 0.2 eV to 0.66 eV when a 1200-Å-thick p-InP surface layer was employed.

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope

2012 ◽  
Vol 717-720 ◽  
pp. 375-378 ◽  
Author(s):  
Takashi Katsuno ◽  
Yukihiko Watanabe ◽  
Tsuyoshi Ishikawa ◽  
Hirokazu Fujiwara ◽  
Masaki Konishi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Electrical Field ◽  
Electrical Field Strength ◽  
Force Microscopy ◽  
Atomic Force ◽  
Koh Etching

The leakage current sources of 4H-SiC Schottky barrier diodes (SBDs) were analyzed using atomic force microscopy (AFM) to determine the surface morphology. Nanosized circular cone shaped pits (nanopits), which depth were distributed from 5 to 70 nm, were observed at the leakage current sources. The leakage currents of 4H-SiC SBDs generate at the nanopits due to the concentration of the electrical field strength. The positions of nanopits correspond to the positions of threading dislocations (TDs), which were identified from molten potassium hydroxide (KOH) etching.

Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts

1981 ◽  
Vol 10 ◽  
Author(s):  
B.-Y. Tsaur ◽  
D. J. Silversmith ◽  
R. W. Mountain ◽  
C. H. Anderson
Keyword(s):  
Schottky Barrier ◽  
Single Layer ◽  
Electrical Characteristics ◽  
Contact Interface ◽  
Large Area ◽  
Leakage Currents ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A New Technique ◽  
Multilayer Metallization

The properties of PtSi-Si Schottky barrier contacts formed by a new technique employing multilayer metallization are compared with those of contacts prepared by the conventional single-layer metallization method. The multilayer technique permits the formation of very shallow contacts without any limitation being placed on the thickness of the PtSi layer. For a PtSi layer of given thickness the PtSi-Si contact interface obtained by this technique is more uniform than the interface formed by annealing a single layer of platinum on silicon. The interfacial uniformity is independent of PtSi thickness for shallow PtSi-Si contacts produced by the multilayer technique, while for conventional contacts the uniformity decreases with increasing PtSi thickness. Large-area (9.4 × 10−3 cm2) diodes utilizing shallow PtSi-Si contacts about 200 Å deep have been fabricated without guard rings. These diodes exhibit near-ideal forward current-voltage characteristics, low reverse leakage currents (less than 5 nA at −10 V) and high breakdown voltages (over −90 V). These characteristics are superior to those of diodes using conventional PtSi-Si contacts.

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

1986 ◽  
Vol 71 ◽  
Author(s):  
K. Nauka ◽  
Jun Amano ◽  
M.P. Scott ◽  
E.R. Weber ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Analytical Techniques ◽  
Deep Trap ◽  
Junction Region ◽  
Leakage Currents ◽  
Junction Diode ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

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