scholarly journals Russian electronic components for extreme conditions: silicon carbide industry founded by LETI

2016 ◽  
pp. 78-89 ◽  
Author(s):  
V. Luchinin ◽  
Keyword(s):  
Silicon Carbide ◽  
Extreme Conditions ◽  
Electronic Components

PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs

2009 ◽  
Vol 19 (01) ◽  
pp. 173-181
Author(s):  
HEATHER O'BRIEN ◽  
M. GAIL KOEBKE
Keyword(s):  
Silicon Carbide ◽  
Recovery Time ◽  
Pulse Current ◽  
Pulse Discharge ◽  
Single Pulse ◽  
Electronic Components ◽  
Army Research Laboratory ◽  
Pulse Switching ◽  
Reliable Performance ◽  
High Pulse

The U. S. Army Research Laboratory (ARL) is investigating compact, energy-dense electronic components to realize high-power, vehicle-mounted survivability and lethality systems. These applications require switching components that are low in weight and volume, exhibit reliable performance, and are easy to integrate into the vehicles' systems. The devices reported here are 4 mm × 4 mm silicon carbide GTOs rated for 3000 V blocking. These devices were packaged at ARL for high pulse current capability, high voltage protection, and minimum package inductance. The GTOs were switched in a 1-ms half-sine, single-pulse discharge circuit to determine reliable peak current and recovery time (or Tq). The GTOs were repeatedly switched over 300 A peak (3.3 A/cm2 and an action of 60 A2s) with a recovery time of 20 µs. The switches were also evaluated for dV/dt immunity up to an instantaneous slope of 3 kV/ µs.

scholarly journals Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 737
Author(s):  
Rongzhen Liu ◽  
Gong Chen ◽  
Yudi Qiu ◽  
Peng Chen ◽  
Yusheng Shi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Selective Laser Sintering ◽  
Minimum Energy ◽  
Laser Sintering ◽  
Extreme Conditions ◽  
Sintering Process ◽  
Application Performance ◽  
Chemical Corrosion ◽  
Porous Sic ◽  
Sintered Silicon

Additive manufactured porous SiC is a promising material applied in extreme conditions characterised by high temperatures, chemical corrosion, and irradiation etc. However, residual Si’s existence deteriorates its performance and limits its application in harsh environments. In this study, B4C was introduced into the selective laser sintering process of SiC, and its effects on forming ability, pore parameters, microstructure, and phases were investigated. The results showed that when B4C was added, the processing window was enlarged. The minimum energy density was reduced from 457 J/cm2 to 214 J/cm2 when the content of B4C reached 15 wt%. Microstructure orientation was enhanced, and the residual silicon content was decreased from 38 at.% to about 8 at.%. Small pores were turned into large pores with the increase of B4C addition. The findings indicate that the addition of B4C increases the amount of liquid phase during the laser sintering process of silicon carbide, improving the SiC struts’ density and reducing the residual silicon by reacting with it. Therefore, the addition of B4C will help improve the application performance of selected laser-sintered silicon carbide under extreme conditions.

scholarly journals Phase transformations of the Al2O3‒SiC‒C concretes under the slagging testing

2018 ◽  
pp. 29-38
Author(s):  
V. A. Perepelitsyn ◽  
L. V. Ostryakov ◽  
M. N. Dunaeva ◽  
A. Yu. Kolobov
Keyword(s):  
Silicon Carbide ◽  
Phase Transformations ◽  
Structural Transformation ◽  
Petrographic Analysis ◽  
Extreme Conditions ◽  
Slag Resistance ◽  
Oxidation Reduction ◽  
Different Parts

The investigating results are given in the article for the detailed mineral-petrographic analysis of the phase and structural transformation in the corundum, silicon carbide and graphite components of the samples taken at different parts of the concrete crucible in course of the extreme conditions testing (1600 °С, 10 hours, varying oxidation-reduction environment). It was defned that the main concrete's minerals components had the relative slag resistance which decreased in the consequence: graphite, silicon carbide, corundum, mullite, glass phase.Ill.12. Ref. 27. Tab. 2.

scholarly journals Import substitution of silicon carbide electronic components. Strategic partnership of LETI and Svetlana PJSC

2017 ◽  
Vol 79 (8) ◽  
pp. 50-59 ◽  
Author(s):  
A. Afanasyev ◽  
V. Vyuginov ◽  
N. Gladkov ◽  
A. Zybin ◽  
V. Ilyin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Import Substitution ◽  
Strategic Partnership ◽  
Electronic Components

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

1980 ◽  
Vol 41 (C4) ◽  
pp. C4-111-C4-112 ◽  
Author(s):  
V. V. Makarov ◽  
T. Tuomi ◽  
K. Naukkarinen ◽  
M. Luomajärvi ◽  
M. Riihonen
Keyword(s):  
Silicon Carbide ◽  
Ion Implanted
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