Design and Simulation of a 2KVA Inverter with an Overload Protector

In this research, the design and simulation of 2000VA inverter is presented. The method implemented for the design was the d.c. – a.c. inverter topologies. The d.c. – a.c. inverter circuit made use of a 555 timer, to digitally pulse the transistors on the inverter side, and the oscillating circuit, to drive the inverter. The system consists of the main inverter stage and the charging unit. These units are further subdivided into different stages. The main inverter performs the basic operation of converting the input d.c. voltage from the battery into an a.c voltage. The charging unit contains an automatic switch that charges the battery when it senses no supply from the mains. Each unit of the project was simulated individually at every different stage of the design by using a simulating software (every circuit). The waveform given at the final stage of the simulation shows that it is a modified sine wave inverter, and it successfully converts a 12V d.c. into a 220V a.c. with a load capacity of 2000VA. The inverter should be able to power the electronic device connected for a reasonable amount of hours

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High Power Inverter Circuit from GTO to IGCT and its Application on AC Driving Locomotive

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.354-355.1394 ◽

2011 ◽

Vol 354-355 ◽

pp. 1394-1399

Author(s):

Su Rong Qu ◽

Zhong Yang Zhang

Keyword(s):

High Power ◽

Electronic Device ◽

Superior Performance ◽

Power Electronic ◽

Large Power ◽

Ac Drive ◽

New Type ◽

Inverter Circuit ◽

Type Power ◽

Paper Author

IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.

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An Active-Clamp Forward Inverter Featuring Soft Switching and Electrical Isolation

Applied Sciences ◽

10.3390/app10124220 ◽

2020 ◽

Vol 10 (12) ◽

pp. 4220

Author(s):

Chien-Hsuan Chang ◽

Chun-An Cheng ◽

Hung-Liang Cheng ◽

Yen-Ting Wu

Keyword(s):

Power Systems ◽

High Efficiency ◽

Sine Wave ◽

Additional Line ◽

Electrical Isolation ◽

Analysis And Design ◽

Grid Connection ◽

Active Clamp ◽

Inverter Circuit ◽

Pv Grid

Traditional photovoltaic (PV) grid-connection inverters with sinusoidal pulse-width modulation (SPWM) control suffer the problem of buck-typed conversion. Additional line-frequency transformers or boost converters are required to step-up output voltage, leading to low system efficiency and high circuit complexity. Therefore, many flyback inverters with electrical isolation have been proposed by adopting a flyback converter to generate a rectified sine wave, and then connecting with a bridge unfolder to control polarity. However, all energy of a flyback inverter must be temporarily stored in the magnetizing inductor of transformer so that the efficiency and the out power are limited. This paper presents a high-efficiency active-clamp forward inverter with the features of zero-voltage switching (ZVS) and electrical isolation. The proposed inverter circuit is formed by adopting a forward converter to generate a rectified sine wave, and combining with the active-clamp circuit to reset the residual magnetic flux of the transformer. Due to the boost capability of the transformer, this inverter is suitable for the PV grid-connection power systems with wide input-voltage variation. The operation principles at steady-state are analyzed, and the mathematical equations for circuit design are conducted. Finally, a laboratory prototype is built as an illustration example according to proper analysis and design. Based on the experimental results, the feasibility and satisfactory performance of the proposed inverter circuit are verified.

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Single Phase Sine Wave PWM Inverter Circuit Simulation And The Design Of Filter Based On Matlab

MATEC Web of Conferences ◽

10.1051/matecconf/201823204030 ◽

2018 ◽

Vol 232 ◽

pp. 04030 ◽

Cited By ~ 2

Author(s):

Niu Yanshu

Keyword(s):

Single Phase ◽

Pulse Width Modulation ◽

Circuit Simulation ◽

Sine Wave ◽

Control Mode ◽

Simulation Tool ◽

Wave Shape ◽

Pwm Inverter ◽

Inverter Circuit ◽

Modulation Control

Inverter circuit is the most important application of PWM control technology. This paper mainly discusses the unipolar PWM ( pulse width modulation ) control mode of single-phase bridge inverter circuit, and uses MATLAB visual simulation tool Simulink to model the circuit. At the same time, a filter is designed to filter the waveform of the inverted output so that the output waveform can reach a smooth sine wave shape. This simulation not only deepens the understanding of PWM inverter circuit theory, but also lay a good experimental foundation for the study of modern power electronics.

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Rancang Bangun Inverter Menggunakan IC CD4047 INPUT Batrai 12 VDC Ke Output Lampu 220 VAC Frekuensi 50-60 HZ

Journal of Electrical Power Control and Automation (JEPCA) ◽

10.33087/jepca.v2i1.22 ◽

2020 ◽

Vol 2 (1) ◽

pp. 1

Author(s):

Andre Saputra ◽

Fadli Eka Yandra

Keyword(s):

Pulse Generator ◽

Electronic Device ◽

Alternating Current ◽

Test Results ◽

Wave Shape ◽

Square Wave ◽

Induction Process ◽

Different Types ◽

Working Principle ◽

Inverter Circuit

Inverter is an electronic device that functions to change current direct (DC) into alternating current (AC) with the magnitude of the voltage and frequency can be adjusted, the output of an inverter in the form of AC voltage in the form of a square wave. Then testing with different types of Step Up CT transformers to get the test results and analysis. And the working principle of this inverter circuit is that the TIP122 and 2N3055 Transistor driver pulses are generated by the IC CD4047 pulse generator, the pulses of the Astambil Multivibrator circuit are 2 pulses with a phase that reverses 180º. The Q and Q pulses are used to provide drivers to the TIP122 and 2N3055 transistors and will induce the Step Up Transformer in turn. So the Step Up Transformer will be able to induce in 2 directions from the CT point. because of the induction process, the transformer primary will provide an AC voltage of 220 volts with a square wave shape. This type of inverter can only be used for lamps, the price is cheaper because it is used to back up the lamp.

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Electronic Cone Illumination with the Conventional Transmission Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100077980 ◽

1977 ◽

Vol 35 ◽

pp. 72-73

Author(s):

William Krakow

Keyword(s):

Electronic Device ◽

Chromatic Aberration ◽

Objective Lens ◽

Hollow Cone ◽

Transmission Electron ◽

Lissajous Figures ◽

High Resolution Images ◽

Imaging Mode ◽

Diffraction Patterns ◽

Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

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Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100092827 ◽

1976 ◽

Vol 34 ◽

pp. 572-573

Author(s):

Russell L. Steere ◽

Eric F. Erbe ◽

J. Michael Moseley

Keyword(s):

Electronic Device ◽

Point Sources ◽

High Contrast ◽

Variable Resistor ◽

Quality Of Results ◽

Low Contrast ◽

Evaporation Source ◽

And Control ◽

At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

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Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106302 ◽

1988 ◽

Vol 46 ◽

pp. 848-849

Author(s):

J. Hefter

Keyword(s):

Image Processing ◽

Digital Image Processing ◽

Digital Image ◽

Electronic Device ◽

Processing System ◽

Average Diameter ◽

Eutectic Solidification ◽

Metal Silicide ◽

The Matrix ◽

Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

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In situ TEM measurements of the electrical properties of interface dislocations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131322 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1338-1339

Author(s):

F. M. Ross ◽

R. Hull ◽

D. Bahnck ◽

J. C. Bean ◽

L. J. Peticolas ◽

...

Keyword(s):

Electrical Properties ◽

Electronic Device ◽

In Situ Tem ◽

Device Performance ◽

Misfit Dislocations ◽

Electrical Characteristics ◽

Strained Layer ◽

Transmission Electron ◽

Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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