scholarly journals IGBTs working in the NDR region of their I-V characteristics

2015 ◽  
Vol 28 (1) ◽  
pp. 1-15 ◽  
Author(s):  
Riteshkumar Bhojani ◽  
Thomas Basler ◽  
Josef Lutz ◽  
Roland Jakob
Keyword(s):  
Short Circuit ◽  
Forward Bias ◽  
Destruction Mechanism ◽  
Operating Region ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Thermal Simulations ◽  
Detailed Work ◽  
Good Agreement

This paper demonstrates the detailed work on high voltage IGBTs using simulations and experiments. The current-voltage characteristics were measured up to the break through point in forward bias operating region at two different temperatures for a 50 A/4.5 kV rated IGBT chip. The experimentally measured data were in good agreement with the simulation results. It was also shown that the IGBTs are able to clamp high collector-emitter voltages although a low gate turn-off resistor in combination with a high parasitic inductance was applied. Uniform 4-cell and 8-cell IGBT models were created into the TCAD device simulator to conduct an investigation. An engendered filamentation behaviour during short-circuit turn-off was briefly reviewed using isothermal as well as thermal simulations and semiconductor approaches for development of filaments. The current filament inside the active cells of the IGBT is considered as one of the possible destruction mechanism for the device failure.

scholarly journals Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 98
Author(s):  
Eugeny Ryndin ◽  
Natalia Andreeva ◽  
Victor Luchinin
Keyword(s):  
Metal Oxide ◽  
Equation System ◽  
Software Implementation ◽  
Compact Model ◽  
Metal Oxide Films ◽  
Bipolar Switching ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

2019 ◽  
Vol 970 ◽  
pp. 75-81
Author(s):  
Alexey Zavgorodniy ◽  
Aitbek Aimukhanov ◽  
Assylbek Zeinidenov ◽  
Galina Vavilova
Keyword(s):  
Magnetic Field ◽  
Carrier Transport ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Photosensitive Cell ◽  
Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

Irregular Electron Transport Through a-Si:H Based Potential Barriers

1993 ◽  
Vol 297 ◽  
Author(s):  
Norbert Bernhard ◽  
B. Frank ◽  
B. Movaghar ◽  
G.H. Bauer
Keyword(s):  
Electron Transport ◽  
Transport Mechanism ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Potential Barriers ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Stable Formation

Irregularities in the current-voltage-characteristics of a-Si:H based potential barriers have been investigated experimentally, and are discussed theoretically with respect to different transport mechanisms. The investigated samples were different series of double and single barrier a-Si:H - a-Si1-xCx:H - heterostructures, as well as homogeneous samples without heterostructure barrier. Current-voltage-(I-V)-characteristics showing a wide variety of features, from complete smoothness of the curves, to bumps and even accidental step-like switching behaviour, as well as different forms of noise, were recorded at different temperatures. Resonant tunnelling as an explaining transport mechanism for the anomalies was excluded because of inconsistency between experiment and calculations partially including special amorphous features. Instead it is argued that all observed irregularities, i. e. bumps in I-V-curves, switching-like behaviour, and appearance of noise, are related to current transport via trap-assisted tunnelling through locally strongly confined transport paths, leading to the meta-stable formation, change and break-down of conductory filaments.

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850082 ◽  
Author(s):  
NEZIR YILDIRIM ◽  
ABDULMECIT TURUT ◽  
HULYA DOGAN
Keyword(s):  
Barrier Height ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Current Voltage Characteristic ◽  
Gaussian Distributions ◽  
Linear Behavior ◽  
Current Voltage ◽  
Device Applications ◽  
Barrier Type ◽  
Current Voltage Characteristics

The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

2014 ◽  
Vol 778-780 ◽  
pp. 657-660 ◽  
Author(s):  
Ulrike Grossner ◽  
Francesco Moscatelli ◽  
Roberta Nipoti
Keyword(s):  
Activation Energy ◽  
Ideality Factor ◽  
Reverse Current ◽  
Activation Energies ◽  
Forward Current ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
The One ◽  
Post Implantation

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

scholarly journals Прогнозирование величины захваченного заряда в захороненном оксиде кремния структур кремний-на-изоляторе с применением эффекта Пула-Френкеля

2020 ◽  
Vol 54 (5) ◽  
pp. 441
Author(s):  
А.А. Ширяев ◽  
В.М. Воротынцев ◽  
Е.Л. Шоболов
Keyword(s):  
Silicon Oxide ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Frenkel Effect ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Current Value ◽  
Dose Radiation

The opportunity to predict trapped charge value in buried silicon oxide of silicon-on-insulator structures using Poole−Frenkel effect was investigated. Using measuring and modeling of current–voltage characteristics of buried silicon oxide at different temperatures conditions for Poole−Frenkel effect in this layer were determined. Processes taking place in buried oxide during measurement of current–voltage characteristics and annealing were considered. Conditions of thermal field treatment of buried oxide for radiation exposure imitation using injection were determined. Dependence of accumulated positive charge value in buried silicon oxide as a result of injection on Poole−Frenkel current value was estimated. The opportunity to use Poole−Frenkel effect for buried oxide defectiveness evaluation during manufacturing of microcircuits with enhanced dose radiation hardness is shown.

The Nature of Native and Light Induced Defect States in i-layers of High Quality a-Si:H Solar Cells Derived from Dark Forward-Bias Current-Voltage Characteristics

2005 ◽  
Vol 862 ◽  
Author(s):  
J. Deng ◽  
M. L. Albert ◽  
J. M. Pearce ◽  
R. W. Collins ◽  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Forward Bias ◽  
Bias Current ◽  
Defect State ◽  
Defect States ◽  
High Quality ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gap States

AbstractResults are presented on the defect state distributions in intrinsic a-Si:H layers with and without hydrogen dilution in p-i-n solar cells obtained directly from the analysis of dark forwardbias current-voltage (JD-V) characteristics. It is shown that there are distinct differences in the distributions of both native and light induced defect states between the two types of i-layers. Computer simulations using these distributions are presented which show excellent agreement with the experimental results not only for the JD-V but more importantly for the bias dependent differential diode quality factor n(V) characteristics. Results are also presented on the nature of the gap states and their evolution with light induced degradation as well as their effects on the performance and stability of high quality a-Si:H solar cells.

scholarly journals Противодействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов

2019 ◽  
Vol 53 (11) ◽  
pp. 1568
Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный
Keyword(s):  
Electric Power ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Undesirable Effect ◽  
Current Dependence ◽  
Power Generators ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractThe “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

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