Thin-Film Absorbing Elements of Adapter-Attenuators for HIC
One of the urgent tasks in the design of hybrid integrated circuits (HIC) is the construction of adapter-attenuators – film absorbing elements providing a wide range of attenuations with specified values of input and output resistances. Known variants of adapter-attenuators based on a homogeneous and piecewise homogeneous resistive film provide (by introducing asymmetry in the dimensions of the input and output contacts, changing the location of a piecewise homogeneous resistive film, introducing dielectric or conductive regions) a resistance transformation coefficient of no more than 3 and 10–12, respectively. In this work, promising topologies of adapter-attenuators for HIC with a close to optimal profile of input and output contacts are proposed, which allow not only to obtain a wide range of transformation coefficients (more than 100), but also to reduce the maximum values of the potential gradient and power density by 10‒30 times. The rectangular topology calculations were made using the apparatus of the theory of functions of a complex variable. Modeling of the optimized topology of adapter-attenuators for HIC was carried out by the finite element method implemented in the Elcut software package. The calculated ratios and graphs showing the relationship of attenuation, the transformation coefficient, the gain in the value of the potential gradient and the power density, depending on the ratio of the size of the film element and the resistivity of the resistive films used, have been provided. The features of adapter-attenuators fitting have been considered. The results obtained are especially important for the pulse mode of operation of adapter-attenuators’ film element for HIC.