scholarly journals Surface micromorphology characterization of PDI8-CN2 thin films on H-Si by AFM analysis

2020 ◽  
Vol 38 (2) ◽  
pp. 334-340 ◽  
Author(s):  
Ştefan Ţălu ◽  
Slawomir Kulesza ◽  
Miroslaw Bramowicz ◽  
Shahram Solaymani ◽  
Mihai Ţălu ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphical Models ◽  
Surface Texture ◽  
Three Dimensional ◽  
Fractal Structures ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Surface Micromorphology ◽  
Semiconducting Compounds

AbstractA nanoscale investigation of three-dimensional (3-D) surface micromorphology of archetypical N, N0- bis (n-etyl) x:y, dicyanoperylene- 3, 4:9, 10 bis (dicarboximide) (PDI8-CN2) thin films on H-Si substrates, which are applicable in n-type semiconducting compounds, has been performed by using fractal analysis. In addition, surface texture characteristics of the PDI8-CN2 thin films have been characterized by using atomic force microscopy (AFM) operated in tapping-mode in the air. These analyses revealed that all samples can be described well as fractal structures at nanometer scale and their three dimensional surface texture could be implemented in both graphical models and computer simulations.

scholarly journals Tip-Based Nanomachining on Thin Films: A Mini Review

2021 ◽  
Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Data Storage ◽  
Three Dimensional ◽  
Maintenance Cost ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current State ◽  
Two Dimensional Materials

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Characterization of sputtered iridium dioxide thin films

1998 ◽  
Vol 13 (5) ◽  
pp. 1318-1326 ◽  
Author(s):  
P. C. Liao ◽  
W. S. Ho ◽  
Y. S. Huang ◽  
K. K. Tiong
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Iridium Dioxide ◽  
Atomic Force ◽  
Average Grain Size

Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

Atomic Force Microscopy and Near-Field Scanning Optical Microscopy Study of Quantum-Dot Assemblies and Fractal Films

1999 ◽  
Vol 5 (S2) ◽  
pp. 968-969
Author(s):  
W. D. Bragg ◽  
K. Banerjee ◽  
M. J. Campin ◽  
Z. C. Ying ◽  
Jane G. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Quantum Dot ◽  
Optical Microscopy ◽  
Metal Salt ◽  
Fractal Structures ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Optical Microscopy

Quantum dots and nanocrystalline films are interesting materials due to their novel properties, not achievable from the bulk materials [1]. New materials fabricated by assembling of quantum dots and nanostructured materials exhibit, for example, high optical nonlinearities. Fractal structures [2] can be formed from quantum-dot aggregates or films. Scanning probe microscopy is the essential technique to characterize these nanometer-scaled materials?Gold nanocluster colloids are synthesized in the interior of surfactant aggregates known as inverse micelles, without the use of water to solubilize the metal salt [3]. The size of the Au quantum dots is well controlled in the colloid synthesis and selected using chromatography. The Au clusters are then sprayed onto a glass slides to form thin films made of Au quantum dots. We have also used the laser ablation technique [4] to grow Ag nanoparticles, fractal aggregates and thin films. These samples have been studied using atomic force microscopy (AFM) and nearfield scanning optical microscopy.

PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREE A0.5Bi0.5TiO3 (A = Na OR K) THIN FILMS

2011 ◽  
Vol 18 (03n04) ◽  
pp. 121-125 ◽  
Author(s):  
Y. L. DING ◽  
X. H. ZHANG ◽  
C. H. YANG ◽  
X. Y. ZHANG ◽  
H. L. YANG
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Dielectric Constants ◽  
Lead Free ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Surface Morphologies

Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) μC/cm2 and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.

CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS DEPOSITED BY RF SPUTTER

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4339-4342 ◽  
Author(s):  
JINXIANG DENG ◽  
GUANGHUA CHEN ◽  
XUEMEI SONG
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Cubic Phase ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Fourier Transformation Infrared Spectroscopy

Cubic boron nitride (c-BN) thin films have been deposited on Si substrates by radio frequency sputter. Sputtering target was hot pressed hexagonal boron nitride of 4N purity. Sputtering gas was the mixture of nitrogen and argon. During depositing c-BN thin films, substrates were biased by dc voltage negatively with respect to ground. By optimizing the deposition conditions, the boron nitride (BN) films containing a large amount of cubic phase were obtained. The samples were characterized with Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). According to FTIR, the cubic phase content of c-BN thin films was evaluated to be 92. The B/N ratio was estimated to be approximately 1 from XPS. The AFM shows that the c-BN thin films delaminated from Si substrates obviously.

Temperature Effect on the Quality of Ain Thin Films

1998 ◽  
Vol 537 ◽  
Author(s):  
Margarita P. Thompson ◽  
Andrew R. Drews ◽  
Changhe Huang ◽  
Gregory W. Auner
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Plasma Source ◽  
High Energy ◽  
Mis Structure ◽  
X Ray Diffraction ◽  
Diffuse Intensity ◽  
Force Microscopy ◽  
Atomic Force

AbstractAIN thin films were deposited at various substrate temperatures via Plasma Source Molecular Beam Epitaxy. The films were grown on 6H-SiC (0001) substrates. Reflection High Energy Electron Diffraction and Atomic Force Microscopy showed a dramatic change in the surface morphology of the film grown at 640°C. This is attributed to a change in the growth mechanism from pseudomorphic at lower temperatures to three-dimensional at higher than 640°C temperatures. Photoreflectance measurements showed an absorption shift toward 200 nm as the deposition temperature increases which is attributed to the change in the growth mechanism at higher temperatures. X-Ray Diffraction was unable to conclusively determine the AIN (0002) peak due to a significant diffuse intensity from the SiC (0002) peak. A MIS structure was created by depositing Pt contacts on the film grown at 500°C. I-V measurements showed that the Pt/AIN contact is Schottky.

STRUCTURE AND PHOTOLUMINESCENT PROPERTIES OF SiCO THIN-FILMS DOPED WITH Al PREPARED BY DUAL MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (16) ◽  
pp. 2149-2156
Author(s):  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
ZHIJIE SHI ◽  
BAOXING ZHAO ◽  
FU LIU ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Dispersive Spectrometer ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Related Defect ◽  
Amorphous Sic

SiCO thin-films doped with aluminum (Al) prepared by alternate deposition of SiC and Al thin layers using Ar and O 2 as sputtering gas were deposited on n- Si substrates. The as-deposited thin-films were annealed under 600°C in nitrogen ambient. The thin-films have been characterized by atomic force microscopy, energy dispersive spectrometer, X-ray diffraction, fourier transform infrared spectroscopy, and photoluminescence spectra. The results showed that the introduction of Al promotes the formation of Si — C bonds, but hinders amorphous SiC to further transform to crystalline SiC . The doped Al would react with SiO x in the thin-films to form more Si particles which strongly affect the optical properties. After Al doped, there presented a seven times of enhancement emission band centered around 412 nm, which is ascribed to nanostructure Si -related defect centers embedded in the SiCO thin-films. The obtained results are expected to have important applications in modern optoelectronic devices.

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