scholarly journals Thin-Film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime

2010 ◽  
Vol 5 (2) ◽  
pp. 160-167
Author(s):  
Michelly De Souza ◽  
Bertrand Rue ◽  
Denis Flandre ◽  
Marcelo Antonio Pavanello

This paper presents the performance of lateral SOI PIN diodes for temperature sensing in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen for calibration. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend the analysis, verifying the accuracy of the existing model.

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Satoshi Konishi ◽  
Akiya Hirata

Abstract The integration of a flexible temperature sensor with a soft microactuator (a pneumatic balloon actuator) for a functional microfinger is presented herein. A sensor integrated with a microactuator can actively approach a target for contact detection when a distance exists from the target or when the target moves. This paper presents a microfinger with temperature sensing functionality. Moreover, thermocouples, which detect temperature based on the Seebeck effect, are designed for use as flexible temperature sensors. Thermocouples are formed by a pair of dissimilar metals or alloys, such as copper and constantan. Thin-film metals or alloys are patterned and integrated in the microfinger. Two typical thermocouples (K-type and T-type) are designed in this study. A 2.0 mm × 2.0 mm sensing area is designed on the microfinger (3.0 mm × 12 mm × 400 μm). Characterization indicates that the output voltage of the sensor is proportional to temperature, as designed. It is important to guarantee the performance of the sensor against actuation effects. Therefore, in addition to the fundamental characterization of the temperature sensors, the effect of bending deformation on the characteristics of the temperature sensors is examined with a repeated bending test consisting of 1000 cycles.


2019 ◽  
Vol 19 (1) ◽  
pp. 8-16
Author(s):  
Zhitao Xiao ◽  
Lei Pei ◽  
Fang Zhang ◽  
Ying Sun ◽  
Lei Geng ◽  
...  

Abstract In this paper, a new method based on phase congruency is proposed to measure pitch lengths and surface braiding angles of two-dimensional biaxial braided composite preforms. Lab space transform and BM3D (block-matching and 3D filter) are used first to preprocess the original acquired images. A corner detection algorithm based on phase congruency is then proposed to detect the corners of the preprocessed images. Pitch lengths and surface braiding angles are finally measured based on the detected corner maps. Experimental results show that our method achieves the automatic measurement of pitch lengths and the surface braiding angles of biaxial braided composite preforms with high accuracy.


1989 ◽  
Vol 146 ◽  
Author(s):  
J-M. Dilhac

ABSTRACTIn this paper, we present experimental kinetics data from the literature, and the large discrepancies between them is discussed. An analytical equation for oxide thickness vs. oxidation time and temperature, adequatly describing thin film growth, is used to estimate the temperature error likely to explain the discrepancy between the above data. We also assess this error by considering the temperature sensors.


1992 ◽  
Vol 258 ◽  
Author(s):  
M.F. Willums ◽  
M. Hack ◽  
P.G. Lecomber ◽  
J. Shaw

ABSTRACTTransient measurements of the source-drain current ISD of amorphous silicon (a-Si:H) thin film transistors are compared with the results of two dimensional simulations. In particular, we have investigated the effect of different amorphous silicon layer thicknesses on the transient response. It is found that the dynamic response of a transistor with 0.4 μm a-Si:H is significantly slower than that of a device with only 0.06 μm of a-Si:H.


2021 ◽  
Vol 9 (2B) ◽  
Author(s):  
Deiglys Borges Monteiro ◽  
Duvan Alejandro Castellanos Gonzalez ◽  
José Rubens Maiorino

The cooling of a nuclear reactor depends on a suitable fluid flow pattern among its fuel elements aiming the removal of heat produced in the fuel. In case of light water reactors, an excess of heat drives the fluid to change its phase from liquid to vapor, significantly reducing its capacity to remove heat and leading the reactor to a Loss of Coolant Accident. Numerical simulations using a CFD code is a suitable tool to address this kind of problem and explore the conditions that should be avoided during the reactor operation. The commercial CFD codes had proven to be reliable to simulate with a high accuracy and confidence the thermal-hydraulics of a sort of equipment and systems, avoiding spending efforts and financial resources in the development of new codes that, essentially, perform the same tasks. Despite of it, the CFD codes must be validated, such as against experimental results. To comply with this objective, a benchmark fuel element was purposed and experimentally essayed to provide experimental results for CFD codes calibration. The results of this essay are provided to the four types of subchannels for a 5x5 PWR fuel element, with results provided as density and void fraction. This work presentes the preliminary results obtained with CFD numerical simulations using the ANSYS-CFX® code for the central subchannel with active rods for stead state operation. The results demonstrated that the ANSYS-CFX® is adequate to simulate with high accuracy the flow in this subchannel.


2008 ◽  
Vol 3 (2) ◽  
pp. 69-75
Author(s):  
Michelly De Souza ◽  
Denis Flandre ◽  
Marcelo A. Pavanello

In this paper an overall analysis on the matching properties of Graded-Channel (GC) SOI MOSFETs in comparison to conventional SOI transistors is performed. Experimental results show that GC devices present poorer matching behavior in comparison to conventional SOI counterpart for equal mask channel length, whereas for same effective channel length, almost the same matching behavior. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to validate the modelbased analysis both in linear and saturation regions.


2011 ◽  
Vol 6 (2) ◽  
pp. 107-113
Author(s):  
Michelly De Souza ◽  
Olivier Bulteel ◽  
Denis Flandre ◽  
Marcelo Antonio Pavanello

This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.


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