scholarly journals The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

2014 ◽  
Vol 9 (2) ◽  
pp. 110-117
Author(s):  
Rodrigo T. Doria ◽  
Renan D. Trevisoli ◽  
Michelly De Souza ◽  
Magali Estrada ◽  
Antonio Cerdeira ◽  
...  
Keyword(s):  
Experimental Data ◽  
Doping Concentration ◽  
Series Resistance ◽  
Harmonic Distortion ◽  
Physical Parameters ◽  
Gate Bias ◽  
Linear Regime ◽  
Third Order ◽  
Nanowire Transistors ◽  
The Third

The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature, the doping concentration and the geometry on the overall linearity have been evaluated. The increase of the series resistance associated both to the variation of the physical parameters and the incomplete ionization effect has shown to improve the second order distortion and degrade the third order one.

Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors

2016 ◽  
Vol 39 ◽  
pp. 17-33 ◽  
Author(s):  
Tamara Rudenko ◽  
Sylvain Barraud ◽  
Yordan M. Georgiev ◽  
Vladimir Lysenko ◽  
Alexei N. Nazarov
Keyword(s):  
Experimental Data ◽  
Threshold Voltage ◽  
Carrier Mobility ◽  
Doping Concentration ◽  
Series Resistance ◽  
Electrical Characterization ◽  
Parameter Extraction ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Nanowire Transistors

This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.

scholarly journals Surface modification of date seeds (Phoenix dactylifera) using potassium hydroxide for wastewater treatment to remove azo dye

2018 ◽  
Vol 13 (4) ◽  
pp. 859-870 ◽  
Author(s):  
Abinaya Arunachalam ◽  
Rajib Ghosh Chaudhuri ◽  
Eldhose Iype ◽  
B. G. Prakash Kumar
Keyword(s):  
Experimental Data ◽  
Azo Dye ◽  
Potassium Hydroxide ◽  
Low Cost ◽  
Carbon Adsorbent ◽  
Phoenix Dactylifera ◽  
Third Order ◽  
23 Factorial Design ◽  
The Third ◽  
Equilibrium Adsorption Capacity

Abstract In this study, a low cost carbon adsorbent was prepared from date seeds. Their surface was modified with potassium hydroxide for use as an adsorbent for the removal of synthetic dye (methyl orange (MO)) from aqueous solutions. The effects of initial MO concentration, adsorbent dosage and temperature were studied. A two-cubed (23) factorial design was carried out on the experimental data, with two replications for the process optimization. The results showed that all three factors and their interactions up to the third order were significant for the removal efficiency of MO. Maximum equilibrium adsorption capacity was 66.26 mg/g at 318 K.

A New Criterion to Determine the Start of Combustion in Diesel Engine

2004 ◽  
Author(s):  
Tomazˇ Katrasˇnik ◽  
Samuel Rodman Opresˇnik ◽  
Ferdinand Trenc ◽  
Nedjeljko Sˇkific´
Keyword(s):  
Experimental Data ◽  
Diesel Engine ◽  
Cylinder Pressure ◽  
Third Order ◽  
First Law Of Thermodynamics ◽  
The Third ◽  
Crank Angle ◽  
New Criterion ◽  
Start Of Combustion

A new criterion for the determination of the start of combustion (SOC) from the diesel engine in-cylinder pressure diagram was developed. It is defined as the maximum of the third order derivative of the cylinder pressure with respect the crank angle. This criterion declares SOC more precisely than other previously published criterions based on pressure diagnostics. This fact was proven analytically and was discernable from the analysis of the experimental data. Beside its accuracy it is also robust enough to allow automatic evaluation of the SOC during processing of the pressure data for a large number of cycles. Analysis of the first law of thermodynamics applied to the engine cylinder showed that the third order derivative of the cylinder pressure with respect to the crank angle is the most suitable criterion for determination of the SOC from the cylinder pressure diagram. Subsequently the criterion was validated through experimental data analysis of the cylinder pressure diagrams for various engine speeds and loads. Cylinder pressure diagrams were processed with a computer code based on the first law of thermodynamics to evaluate the rate of heat release (ROHR), which formed the base for experimental validation. The cylinder pressure was measured with an advanced piezoelectric sensor at the resolution 0.1 deg. CA. Top dead center was determined with the capacitive top dead center sensor. Due to the analytic foundation of the developed method and its validation through highly accurate experimental data it can be concluded that new criterion is credible for the determination of the SOC.

A New Criterion to Determine the Start of Combustion in Diesel Engines

2005 ◽  
Vol 128 (4) ◽  
pp. 928-933 ◽  
Author(s):  
Tomaž Katrašnik ◽  
Ferdinand Trenc ◽  
Samuel Rodman Oprešnik
Keyword(s):  
Experimental Data ◽  
Order Derivative ◽  
Cylinder Pressure ◽  
Third Order ◽  
First Law Of Thermodynamics ◽  
The Third ◽  
Crank Angle ◽  
New Criterion ◽  
Start Of Combustion

A new criterion for the determination of the start of combustion (SOC) from the diesel engine in-cylinder pressure diagram was developed. It is defined as the maximum of the third-order derivative of the cylinder pressure with respect to the crank angle. This criterion declares SOC more precisely than other previously published criteria based on pressure diagnostics. This fact was proven analytically and was discernable from the analysis of the experimental data. Besides its accuracy it is also robust enough to allow automatic evaluation of the SOC during processing of the pressure data for a large number of cycles. By applying the first law of thermodynamics analysis to the engine cylinder it was discovered that the third-order derivative of the in-cylinder pressure with respect to the crank angle is the most suitable criterion for determination of the SOC from the in-cylinder pressure diagram. Subsequently, the criterion was validated through experimental data analysis of the in-cylinder pressure diagrams for various engine speeds and loads. In order to evaluate the rate of heat release (ROHR), which formed the base for the experimental validation, in-cylinder pressure diagrams were processed with a computer code based on the first law of thermodynamics. The cylinder pressure was measured with an advanced piezoelectric sensor at the resolution 0.1 deg CA. Top dead center was determined with the capacitive top dead center sensor. Due to the analytic foundation of the developed method and its validation through highly accurate experimental data it can be concluded that new criterion is credible for the determination of the SOC.

scholarly journals Higher Order Perturbation Corrections of Rotating Excited States in the Standard SU(3) Skyrme Model to Baryon Mass Spectrum

1997 ◽  
Vol 12 (05) ◽  
pp. 873-890 ◽  
Author(s):  
Jin-Ping Li ◽  
Mu-Lin Yan ◽  
Rong-Hua Yu
Keyword(s):  
Experimental Data ◽  
Mass Spectrum ◽  
Excited States ◽  
Higher Order ◽  
Skyrme Model ◽  
Order Perturbation ◽  
Third Order ◽  
The Third ◽  
Baryon Mass ◽  
Higher Order Corrections

The higher order corrections of SU(3) rotating excited states to the Gell-Mann–Okubo Relations (or GOR) are presented in the standard SU(3) Skyrme model. The Improved GOR (or IGOR) are obtained. The results show the IGOR for decuplet up to the third order and for octet up to the second order are much compatible with the experimental data. But things become quite inadequate for the octet to the third order. In order to overcome the inadequacy, a heuristic discussion is presented. The properties of SU(3) rotating excited states 27-let (with spin [Formula: see text] or [Formula: see text]), 10*-let (with spin [Formula: see text]) and 35-let (with spin [Formula: see text]) are also discussed.

scholarly journals The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Nilton Graziano Junior ◽  
Renan Trevisoli ◽  
Rodrigo T. Doria
Keyword(s):  
Surface Potential ◽  
Doping Concentration ◽  
Gate Oxide ◽  
Channel Width ◽  
Interface Traps ◽  
Gate Bias ◽  
Nanowire Transistors

This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from physical devices and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping concentration and the gate bias are varied.

scholarly journals Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion

2011 ◽  
Vol 6 (2) ◽  
pp. 114-121
Author(s):  
Rodrigo T. Doria ◽  
Marcelo Antonio Pavanello ◽  
Renan D. Trevisoli ◽  
Michelly De Souza ◽  
Chi-Woo Lee ◽  
...  
Keyword(s):  
Harmonic Distortion ◽  
Drain Current ◽  
Voltage Gain ◽  
Third Order ◽  
Inversion Mode ◽  
Nanowire Transistors ◽  
Operation Temperature ◽  
Analog Performance ◽  
Junctionless Transistors ◽  
Fixed Input

This paper performs a comparative study of the analog performance of Junctionless Nanowire Transistors (JNTs) and classical Trigate inversion mode (IM) devices focusing on the harmonic distortion. The study has been carried out in the temperature range of 223 K up to 473 K. The non-linearity or harmonic distortion (HD) has been evaluated in terms of the total and the third order distortions (THD and HD3, respectively) at a fixed input bias and at a targeted output swing. Several parameters important for the HD evaluation have also been observed such as the transconductance to the drain current ratio (gm/IDS), the Early voltage (VEA) and the intrinsic voltage gain (AV). Trigate devices showed maximum AV around room temperature whereas in JNTs the intrinsic voltage gain increases with the temperature. Due to the different AV characteristics, Junctionless transistors present improved HD at higher temperatures whereas inversion mode Trigate devices show better HD properties at room temperature.When both devices are compared, Junctionless transistors present better THD and HD3 with respect to the IM Trigate devices.

scholarly journals Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature

2012 ◽  
Vol 7 (2) ◽  
pp. 121-129
Author(s):  
Rodrigo T. Doria ◽  
Renan D. Trevisoli ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Doping Concentration ◽  
Series Resistance ◽  
Simulated Data ◽  
Zero Temperature ◽  
Inversion Mode ◽  
Nanowire Transistors ◽  
Parasitic Resistance ◽  
Opposite Behavior ◽  
The One ◽  
The Impact

The effect of the source/drain parasitic resistance (RS) on the I-V characteristics of Junctionless Nanowire Transistors (JNTs) has been evaluated through experimental and simulated data. The impact of several parameters such as the temperature, the fin width, the total doping concentration, the source/drain length and the source/drain doping concentration on RS has been addressed. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices, showing opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on RS is noted with the temperature increase, which is related to the incomplete ionization. This effect inhibits the presence of a Zero Temperature Coefficient (ZTC) operation bias in the Junctionless devices.

Probe size and 5th-order aberration

1987 ◽  
Vol 45 ◽  
pp. 134-135 ◽  
Author(s):  
Zhifeng Shao
Keyword(s):  
Electron Probe ◽  
Spherical Aberration ◽  
Wave Length ◽  
Cylindrical Symmetry ◽  
Electron Wave ◽  
Third Order ◽  
The Third ◽  
Probe Radius ◽  
Small Probe ◽  
Probe Size

A small electron probe has many applications in many fields and in the case of the STEM, the probe size essentially determines the ultimate resolution. However, there are many difficulties in obtaining a very small probe.Spherical aberration is one of them and all existing probe forming systems have non-zero spherical aberration. The ultimate probe radius is given byδ = 0.43Csl/4ƛ3/4where ƛ is the electron wave length and it is apparent that δ decreases only slowly with decreasing Cs. Scherzer pointed out that the third order aberration coefficient always has the same sign regardless of the field distribution, provided only that the fields have cylindrical symmetry, are independent of time and no space charge is present. To overcome this problem, he proposed a corrector consisting of octupoles and quadrupoles.

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