scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

Studies on Lead Sulfide (PbS) Semiconducting Thin Films Deposited from Nanoparticles and Its NLO Application

2014 ◽  
Vol 13 (01) ◽  
pp. 1450001 ◽  
Author(s):  
T. S. Shyju ◽  
S. Anandhi ◽  
R. Sivakumar ◽  
R. Gopalakrishnan
Keyword(s):  
Lead Sulfide ◽  
Raman Shift ◽  
Saturable Absorption ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type ◽  
Semiconducting Thin Films ◽  
Deposited Films

Nanoparticle Lead sulfide was synthesized via simple chemical method and deposited on glass substrates at different substrate temperatures by thermal evaporation technique. The synthesized nanoparticle PbS was analyzed and confirmed by X-ray diffraction (XRD), Scanning electron microscopy SEM with EDX and thermogravimetry. The structural, optical, morphological and electrical properties of the deposited films were studied using XRD, UV-Vis, Raman, SEM with EDX, atomicforce microscopy AFM and Hall Effect measurements. The thickness of the deposited samples was measured using thickness profilometer. The Raman shift in the peak occurs toward lower energy with increasing substrate temperature deposited lead sulfide. The Z-scan study with open aperture was carried out at 532 nm using 5 ns laser pulse on the deposited films which shows that nonlinear absorption arises from saturable absorption process. The deposited PbS film exhibits p-type conductivity in Hall measurement.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

scholarly journals Studying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering

2015 ◽  
Vol 18 (1) ◽  
pp. 23-33
Author(s):  
Phuc Huu Dang ◽  
Duan Van Nguyen ◽  
Vu Si Hoai Nguyen ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
The Other ◽  
Working Pressure ◽  
Rutile Structure ◽  
Different Temperatures ◽  
Ambient Gas ◽  
Optimum Annealing Temperature ◽  
P Type ◽  
Deposited Films

Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

Effect of Film Thickness on Some Optical Properties of Sprayed Pyrolysis Cobalt Oxide Thin Films

2011 ◽  
Vol 316-317 ◽  
pp. 23-29
Author(s):  
S.A. Aly
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Cobalt Oxide ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Structural Characteristics ◽  
Wave Length ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Deposited Films

The optical properties of cobalt oxide samples prepared by spray pyrolysis technique on glass substrates with different film thicknesses have been studied. The structural characteristics of the samples were investigated using X-ray diffraction. The optical properties of the prepared films were studied by transmittance and reflectance measurements, and the integrated transmittance (TVIS, and TNIR) and absorptance (AVIS and ANIR) in VIS and NIR regions was calculated and found to be affected by film thickness. The dependence of absorption coefficient on wave length was also reported. The energy gap was calculated and two energies have been observed at 2.15 and 1.5 eV suggesting that the deposited films are semi-conducting with allowed direct transitions.

scholarly journals Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

2016 ◽  
Vol 19 (4) ◽  
pp. 137-146
Author(s):  
Phuc Huu Dang ◽  
Nhan Van Pham ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
Ar Gas ◽  
Optimum Annealing Temperature ◽  
Quartz Glasses ◽  
P Type ◽  
Deposited Films

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

ZITO (ZnO-SnO2-In2O3 ) Transparent Conducting Oxides: Electrical and Optical Properties of DC Magnetron Sputtered Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Cleva Ow-Yang ◽  
Hyo-Yong Yeom ◽  
Burag Yaglioglu ◽  
David C. Paine
Keyword(s):  
Visible Spectral Region ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Conducting Oxides ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Transparent Conducting ◽  
Hall Effect Measurements ◽  
Deposited Films

AbstractAmorphous ZITO films were deposited by dc magnetron sputtering onto glass substrates from ceramic oxide targets containing Zn:In:Sn cation ratios of 1:2:1 and 1:2:1.5. The microstructure, carrier density, mobility, and resistivity of as-deposited and annealed samples were evaluated using x-ray diffraction and Hall effect measurements. The as-deposited films were amorphous and remained so after annealing at 200°C in air for up to five hours. Transmissivity of the films exceeded 80% in the visible spectral region. The minimum resistivity value (7.6×10−4 Ω-cm) was obtained from thin films deposited using the 1:2:1 composition target and a substrate temperature of 300°C.

scholarly journals Influence of Cu Doping on Bipolar Conduction Suppression for p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 Alloys

2020 ◽  
Vol 58 (6) ◽  
pp. 439-445
Author(s):  
Hyun-Jun Cho ◽  
Hyun-Sik Kim ◽  
Woong-hee Sohn ◽  
Sang-il Kim
Keyword(s):  
Thermal Conductivity ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Band Model ◽  
Cu Doping ◽  
Conduction Bands ◽  
P Type ◽  
Bipolar Conduction ◽  
Additional Point

In this study, we report how Cu doping can modify the thermoelectric performance of p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 thermoelectric alloys, including their electronic and thermal transport properties. For electronic transport, the power factors of both Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 compositions were increased by Cu doping. The origins of the enhanced power factors were examined using a single parabolic band model, by estimating the changes in deformation potential, effective mass, nondegenerate mobility and weighted mobility in both valence and conduction bands. The weighted mobility of the valence band was increased by Cu doping and increased Sb ratio, while the weighted mobility of the conduction band decreased, suggesting bipolar conduction was greatly reduced. For thermal transport, Cu0.0075Bi0.4Sb1.6Te3 and Bi0.4Sb1.6Te3 had a lower lattice thermal conductivity than Cu0.0075Bi0.5Sb1.5Te3 and Bi0.5Sb1.5Te3, respectively, due to an increase in Umklapp scattering. In addition, Cu doping suppressed bipolar thermal conductivity at high temperatures, by increasing hole concentration. It was also confirmed that Cu-doped samples had a lower lattice thermal conductivity than undoped samples due to additional point defect scattering. As a result, the thermoelectric figure of merit (zT) was greatly enhanced by 0.0075 mol of Cu doping, from 0.80 to 1.11 in Bi0.5Sb1.5Te3, while the zT is increased from 1.0 to 1.05 for Bi0.4Sb1.6Te3.

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