scholarly journals Modeling and analysis of wavering redistribution of energy in the presence of its own electromagnetic radiation in key electronic circuits on MOS transistors.

2021 ◽  
Author(s):  
K.A. Boikov ◽  
Keyword(s):  
Electromagnetic Radiation ◽  
Gate Dielectric ◽  
Vibrational Energy ◽  
Reference Sample ◽  
Technical Diagnostics ◽  
Mos Transistors ◽  
Modeling And Analysis ◽  
Mos Transistor ◽  
Significant Difference ◽  
Electrical Component

For the first time, a simplified model of the redistribution of vibrational energy in a MOS transistor has been developed and analyzed. The transistor is turned on in open drain mode and in inverter mode. After calculating the parameters, the numerical radio profiles of the signals of the electrical component of electromagnetic radiation, created by the key unit itself, were obtained. An experiment was carried out to register the vibrational redistribution of energy in a MOS transistor using a specially designed sample. The results of registration of a series of radio profiles of signals with the configuration of the universal ports of the sample of a digital device are presented, and a correlation assessment of the reproducibility of the experiment is carried out. The correlation of the radio profiles of the signals obtained as a result of modeling and as a result of the experiment is not lower than 0.93. This testifies to the correctness of the developed models. On the basis of the presented development, a correlation assessment of the radiation of a reference sample and a sample with a slight deviation of parameters has been carried out. Even with a slight change in the parameters of the key node associated with degradation of the gate dielectric, the cross-correlation in the normal state and with a defect r < 0.7, which indicates a significant difference in the signal radio profile of normal functioning and with deterioration of parameters. The proposed models can be used in passive radio-wave technical diagnostics based on the registration of the electrical component of electromagnetic radiation generated by the radio-electronic devices themselves and opens up new possibilities for diagnosing malfunctions at the early stages of their occurrence.

Effect of Technology Scaling on MOS Transistor Performance with High-K Gate Dielectrics

2002 ◽  
Vol 716 ◽  
Author(s):  
Nihar R. Mohapatra ◽  
Madhav P. Desai ◽  
Siva G. Narendra ◽  
V. Ramgopal Rao
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Length ◽  
Mos Transistors ◽  
Short Channel ◽  
Technology Scaling ◽  
Mos Transistor ◽  
Wide Range ◽  
Impact Of Technology ◽  
The Impact

AbstractThe impact of technology scaling on the MOS transistor performance is studied over a wide range of dielectric permittivities using two-dimensional (2-D) device simulations. It is found that the device short channel performance is degraded with increase in the dielectric permittivity due to an increase in dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we observe a substantial coupling between source and drain regions through the gate dielectric. We provide extensive 2-D device simulation results to prove this point. Since much of the coupling between source and drain occurs through the gate dielectric, it is observed that the overlap length is an important parameter for optimizing DC performance in the short channel MOS transistors. The effect of stacked gate dielectric and spacer dielectric on the MOS transistor performance is also studied to substantiate the above observations.

Simulation and Analysis of Two-Mass Suspension Modification Using MATLAB Programming

2019 ◽  
Vol 3 (1) ◽  
pp. 160-165
Author(s):  
Hendry D. Chahyadi
Keyword(s):  
Vibrational Energy ◽  
State Space Model ◽  
Mass System ◽  
Modeling And Analysis ◽  
The Road ◽  
Final Project ◽  
Quarter Car ◽  
Automotive Suspension ◽  
Mass Spring ◽  
Matlab Programming

The designs of automotive suspension system are aiming to avoid vibration generated by road condition interference to the driver. This final project is about a quarter car modeling with simulation modeling and analysis of Two-Mass modeling. Both existing and new modeling are being compared with additional spring in the sprung mass system. MATLAB program is developed to analyze using a state space model. The program developed here can be used for analyzing models of cars and vehicles with 2DOF. The quarter car modelling is basically a mass spring damping system with the car serving as the mass, the suspension coil as the spring, and the shock absorber as the damper. The existing modeling is well-known model for simulating vehicle suspension performance. The spring performs the role of supporting the static weight of the vehicle while the damper helps in dissipating the vibrational energy and limiting the input from the road that is transmitted to the vehicle. The performance of modified modelling by adding extra spring in the sprung mass system provides more comfort to the driver. Later on this project there will be comparison graphic which the output is resulting on the higher level of damping system efficiency that leads to the riding quality.

Physical and Mental Health of Different Types of Orchestra Musicians Compared to Other Professions

2012 ◽  
Vol 27 (1) ◽  
pp. 9-14 ◽  
Author(s):  
Edgar Voltmer ◽  
Mark Zander ◽  
Joachim E Fischer ◽  
Brigitte M Kudielka ◽  
Bernhard Richter ◽  
...  
Keyword(s):  
Mental Health ◽  
General Population ◽  
Physical Health ◽  
Reference Sample ◽  
Physical And Mental Health ◽  
Health Score ◽  
Professional Groups ◽  
Significant Difference ◽  
Different Types ◽  
Physical Health Score

Objectives: This study examined the physical and mental health of orchestra musicians of different types of orchestras compared to a reference sample of the general population and of two other professions. Methods: Professional musicians (n = 429) from nine opera and/or concert orchestras were surveyed with the Short Form-12 general health questionnaire (SF-12). Data were compared with a reference sample (n = 2805) with a sample of physicians (n = 549) and aircraft manufacturers (n = 822). Results: Compared to the reference sample and the two other professional groups, the musicians had a higher physical health score: 53.07 (SD 5.89) vs 49.03 (SD 9.35) reference, 51.26 (SD 7.53) physicians, and 49.31 (SD 7.99) aircraft manufacturers. The musicians’ mental health score was lower compared to the reference sample but did not differ from the other professional groups: 48.33 (SD 9.52) for musicians vs 52.24 (SD 8.10) reference, 48.26 (SD 10.06) physicians, and 48.54 (SD 9.59) aircraft manufacturers. Physical health but not mental health decreased with age in all groups. In physical and mental health, women scored lower than men. There was no significant difference in physical and mental health scores between musicians of concert and opera orchestras. Age and gender accounted for 3.6% of the variance of the physical health score, but none of the demographic characteristics or orchestral roles and functions was predictive for mental health scores. Conclusions: Musicians report better physical but poorer mental health than the general population, but they did not differ in mental health scores from physicians or aircraft manufacturers.

scholarly journals Minimum MOS Transistor Count Fractional-Order Voltage-Mode and Current-Mode Filters

Technologies ◽  
2019 ◽  
Vol 7 (4) ◽  
pp. 85
Author(s):  
Panagiotis Bertsias ◽  
Costas Psychalinos ◽  
Ahmed S. Elwakil ◽  
Brent Maundy
Keyword(s):  
Fractional Order ◽  
Transfer Functions ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Process ◽  
Mos Transistors ◽  
Correct Operation ◽  
Mos Transistor ◽  
Voltage Mode ◽  
Filter Structures

Voltage-mode and current-mode fractional-order filter topologies, which are capable of realizing various types of transfer functions, are introduced in this paper. Thanks to the employment of the transconductance parameter of the MOS transistors, the derived filter structures offer the benefit of the electronic adjustment of their frequency characteristics. With regards to the literature, the number of MOS transisitors is minimized leading to significant reduction of the circuit complexity and power dissipation. Simulation results, derived using the Design Kit of the 0.35 μm Austria Mikro Systeme CMOS process and the Cadence IC design suite, confirm the correct operation of the presented filter structures.

Correlations of ΔNp73 and TAp73 Expression Pattern with Specific Genetic Rearrengents in AML.

Blood ◽  
2006 ◽  
Vol 108 (11) ◽  
pp. 4501-4501
Author(s):  
Antonio Roberto L. Araújo ◽  
Ana Silvia G. Lima ◽  
Rodrigo A. Panepucci ◽  
Eduardo M. Rego
Keyword(s):  
Bone Marrow ◽  
De Novo ◽  
Expression Patterns ◽  
Reference Sample ◽  
Distinct Pattern ◽  
Dominant Negative ◽  
Leukemic Cells ◽  
Transactivation Domain ◽  
Expression Levels ◽  
Significant Difference

Abstract The p73 protein is a p53 homolog and acts on cell cycle and apoptosis regulation. Resistance to apoptosis is a common feature of Acute Myeloid Leukemia (AML), but mutations on the genes p53 and p73 are rare. It is translated in two distinct isoforms: TAp73 and ΔNp73. The later does not possess the N-terminal transactivation domain and exerts a dominant negative action over TAp73 and p53 functions. Theoretically an aberrant high expression of ΔNp73 may lead to a block of p53 and TAp73, thus conferring a proliferative advantage to the leukemic cells. In order to evaluate this issue, we proposed to: Compare the gene expression levels of TAp73 and ΔNp73 isoforms in the bone marrow from de novo AML patients and normal individuals; Correlate these expression patterns with the presence of the rearrangements PML-RARα, AML1-ETO and CBFβ-MHY11, (previously determined by RT-PCR according the BIOMED-1 protocol). From 137 AML patients whose samples were evaluated by Real Time PCR, 78 harbored the genetic rearrangements (referred to as RP group): PML-RARα (n = 30), AML1-ETO (n = 16) or CBFβ-MHY11 (n = 32), whereas in the 59 remaining samples these rearrangements were not detected (RN group). Additionally, CD34+ cell samples of 22 normal bone marrow donors were also evaluated. Sample input was normalized by GAPDH expression and the relative expression was calculated using the cell line k562 as reference sample. The mean expression of TAp73 and ΔNp73 was significantly lower on normal CD34+ cell compared to leukemic samples [(TAp73: mean (m) = 0.0162 ± standard deviation = 0.004 vs m = 0.623 ± 0.0845, p = 0,0047); (ΔNp73: m = 0.277 ± 0.09 vs m = 8.09 ± 1.34, p = 0,0215)]. A higher expression of TAp73 and ΔNp73 was observed on RN compared to RP samples [(TAp73: m = 0.992 ± 0.171 vs m = 0.344 ± 0.055, p &lt; 0,0001); (ΔNp73: m = 12.44 ± 2.434 vs m = 4.80 ± 1.382, p = 0,0046)]. There was no difference in the expression of TAp73 between PML-RARα positive samples (m = 0.391 ± 0.095) and the remaining leukemic samples (m = 0.688 ± 0.104, p = 0,1476). However, the expression levels of ΔNp73 were significantly lower in the PML-RARα positive samples (m = 2.656 ± 0.370 vs m = 9.62 ± 1.69, p = 0,0317). No significant difference was observed in ΔNp73 and TAp73 expression between PML-RARα positive samples and the remaining samples with gene rearrengements (TAp73: m = 0.391 ± 0.095 vs m = 0.3144 ± 0.0671, p = 0,4990; ΔNp73: m = 2.656 ± 0.37 vs m = 6.153 ± 2.221, p = 0,2205). When compared to AML1-ETO and CBFβ-MHY11, the RN samples had a higher expression level of TAp73 (m = 0.3144 ± 0.0672 vs m = 0.992 ± 0.1717, p = 0.001), while there was no significant difference on the expression levels of ΔNp73 (m = 6.15 ± 2.22 vs m = 12.44 ± 2.43, p = 0.0642). These findings suggest that both p73 isoforms pathways are involved in the leukemogenic process. Moreover, the lower expression of ΔNp73 in the group with gene rearrangements may contribute to its better prognosis. The distinct pattern of ΔNp73 isoforms expression in AML with PML-RARα rearrangements suggests that it may be associated to a distinct response to apoptotic stimuli and to treatment outcome.

scholarly journals Модель термополевой нестабильности p-МОП-транзисторов при отрицательном смещении затвора

2020 ◽  
Vol 54 (2) ◽  
pp. 181
Author(s):  
О.В. Александров
Keyword(s):  
Silicon Substrate ◽  
Gate Dielectric ◽  
Inversion Layer ◽  
Surface States ◽  
Quantitative Model ◽  
Oxide Semiconductor ◽  
Mos Transistors ◽  
Ion Diffusion ◽  
Bias Temperature Instability ◽  
P Type

Abstract A new quantitative model of the negative-bias temperature instability (NBTI) of p -MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO_2 interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO_2 IPB by positively charged hydrogen ions H^+, accumulated in the p ^+-type inversion layer of the silicon substrate. The dependences of the surface and space charges in p -MOS transistors on the NBTI time are controlled by the kinetics of H^+-ion diffusion and drift from the silicon substrate to the Si–SiO_2 IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H^+ ion segregation coefficient at the Si–SiO_2 IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.

scholarly journals MAIN LDE EFFECTS OF DEEP SUBMICRON MOS TRANSISTORS AND APPROACHES TO THEIR CONSIDERATION INTO SPICE MODELS

2020 ◽  
Author(s):  
Dmitriy Shipitsin ◽  
Aleksandr Potupchik ◽  
Aleksandr Shemyakin
Keyword(s):  
Deep Submicron ◽  
Compact Model ◽  
Mos Transistors ◽  
Mos Transistor ◽  
Subsequent Measurement

A review of the main, in terms of the influence on the electrophysical behavior of the MOS transistor, topology-dependent effects (LDE) was performed. Approaches to development test structures designed for their subsequent measurement, extraction of SPICE parameters and integration the results into a compact model are proposed.

scholarly journals Influence of type of birth on child development: a comparison by Bayley- III Scale

2020 ◽  
Vol 30 (2) ◽  
pp. 301-310
Author(s):  
Ana Paula Magosso Cavaggioni ◽  
Maria do Carmo Fernandes Martins ◽  
Miria Benincasa
Keyword(s):  
Cesarean Section ◽  
Adaptive Behavior ◽  
Motor Development ◽  
Reference Sample ◽  
Psychological Development ◽  
Elective Cesarean Section ◽  
Fine Motor ◽  
Gastrointestinal Problems ◽  
Significant Difference ◽  
Elective Cesarean

Introduction: Elective cesarean section is associated with several damages to the newborn's health, such as respiratory and gastrointestinal problems and diabetes that  last throughout life. However, few studies discuss aspects related to psychological development. Objective: To investigate the development of Brazilian children according to the type of birth and gestational age in the cognitive, language, motor, socio-emotional and adaptive behavior domains. Methods: This is an exploratory and descriptive cross-sectional study conducted in the city of São Bernardo de Campo, São Paulo, Brazil, between June 2016 and March 2017. The final sample consisted of 263 children up to 42 months of age. For data collection were applied a socio demographic questionnaire and the Bayley-III Scale. The statistical analysis was  based on  both a  North American reference sample  and a local  sample using   the SPSS version 21, through  Pearson's Chi-square statistical test and  significance criteria p <0.05. Results: A significant difference (p<0.005) was observed, with a higher risk of problems in fine motor development and expressive language in children born at pre-term between 37- 39 weeks compared to those born at term between  39 - 41 weeks. Significant difference (p<0.005) was also observed in sensory processing and adaptive behavior, with greater impairment  in children born via elective cesarean section compared to those born vaginally. Conclusion: Despite its limitations and discrepancies, this research indicates potential impairments in the psychological development of children born at early term via elective cesarean.

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