Antireflection Coatings for Semiconductor Failure Analysis

Author(s):  
Brennan Davis ◽  
Wilson Chi

Abstract The use of an antireflection coating for backside semiconductor failure analysis is discussed. The process of selecting an appropriate coating is described. Several known coatings are also described in regards to imaging quality, material properties, and the benefits to device analysis applications.

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 64 ◽  
Author(s):  
Pallabi Paul ◽  
Kristin Pfeiffer ◽  
Adriana Szeghalmi

Antireflection coatings (ARC) are essential for various optical components including such made of plastics for high volume applications. However, precision coatings on plastics are rather challenging due to typically low adhesion of the coating to the substrate. In this work, optimization of the atomic layer deposition (ALD) processes towards conformal optical thin films of Al2O3, TiO2 and SiO2 on poly(methyl methacrylate) (PMMA) has been carried out and a five-layer ARC is demonstrated. While the uncoated PMMA substrates have a reflectance of nearly 8% in the visible (VIS) spectral range, this is reduced below 1.2% for the spectral range of 420–670 nm by applying a double-side ARC. The total average reflectance is 0.7%. The optimized ALD coatings show a good adhesion to the PMMA substrates even after the climate test. Microscopic analysis on the cross-hatch areas on PMMA after the climate test indicates very good environmental stability of the ALD coatings. These results enable a possible route by ALD to deposit uniform, crack free, adhesive and environmentally durable thin film layers on sensitive thermoplastics like PMMA.


Author(s):  
Fritz Christian Awitan ◽  
Camille Joyce Garcia ◽  
Dirk Andrew Doyle ◽  
Lawrence Benedict

Abstract An ARC solution that can be used to improve backside imaging for backside photoemission microscopy applications is presented in this paper. Zinc Oxide (ZnO) -based thin films used as ARCs are deposited at the backside of the failing units through a simple and low cost spray pyrolysis technique. An improvised set-up, composed of an atomizer and a hot plate, is used in the experiment. The paper provides evidence of acceptable process repeatability and demonstrates that the technique and the material have important applications in the field of failure analysis. Furthermore, it shows that the application of ARC resulted in better defect localization. The location of the defect is easily been determined upon doing frontside inspection - to - backside image comparison on the deposited unit. By using high kV ion beam passive voltage contrast (PVC) and angled cut focused ion beam (FIB) cross section, we are able to isolate further and show the nature of the defect at the failing block.


2010 ◽  
Vol 24 (11) ◽  
pp. 1145-1150 ◽  
Author(s):  
FILIZ KARAOMERLIOGLU

Antireflection coatings have had the greatest impact on optics. The antireflection (AR) coating is the critically important technology in obtaining high performance of optoelectronic devices. In the present paper, characteristics of the ferroelectric based multilayered antireflection coating systems are investigated. Multilayer antireflection coatings consisting of insulator thin films have been modeled in the region between the 400 nm and 800 nm visible bands of electromagnetic spectrum to reduce reflectance from ferroelectric based substrate.In this type of antireflection coating we can regulate the optical properties of a system by external electric (or thermal field) and design a broadband low reflection coating system for optoelectronic devices. In order to design and simulate the normal incidence wideband visible multilayer AR coatings, we have developed a Fortran software program based upon Fresnell equations. Different types of layers which are two-different materials like ZnSe and ZrO2for even-folded multilayer (two-, four-, six-, eight-, ten-, and twelve-layer) antireflection coatings are used. Ferroelectric material, LiNbO3is used as the substrate. The optical thicknesses of each layer are equal to a quarter-wave thick at a certain wavelength.


2011 ◽  
Vol 66-68 ◽  
pp. 1-4
Author(s):  
Wen Liang Wang ◽  
Xiao Hong Rong

The refractive index of silicon material is very high, and antireflection coatings are widely used to improve conversion efficiencies of silicon solar cells. An ideal antireflection structure should lead to zero reflection loss on its surfaces over an extended solar spectral range for all angles of incidence. Based on optical thin film theory, a multilayer structure are adopted as initial stack, and with the aid of conjugate graduate optimized method, a broadband and wide-angle antireflection is designed for using on silicon solar cell. In our design, the incident angles of antireflection coating are considered from to , working wavelength ranges are considered from 400nm to 1200nm. Within these ranges, the design results show that it can reduce residual reflection evidently in theory.


2005 ◽  
Vol 128 (1) ◽  
pp. 140-147 ◽  
Author(s):  
Jeffrey T. Fong ◽  
James J. Filliben ◽  
Roland deWit ◽  
Richard J. Fields ◽  
Barry Bernstein ◽  
...  

In this paper, we first review the impact of the powerful finite element method (FEM) in structural engineering, and then address the shortcomings of FEM as a tool for risk-based decision making and incomplete-data-based failure analysis. To illustrate the main shortcoming of FEM, i.e., the computational results are point estimates based on “deterministic” models with equations containing mean values of material properties and prescribed loadings, we present the FEM solutions of two classical problems as reference benchmarks: (RB-101) The bending of a thin elastic cantilever beam due to a point load at its free end and (RB-301) the bending of a uniformly loaded square, thin, and elastic plate resting on a grillage consisting of 44 columns of ultimate strengths estimated from 5 tests. Using known solutions of those two classical problems in the literature, we first estimate the absolute errors of the results of four commercially available FEM codes (ABAQUS, ANSYS, LSDYNA, and MPAVE) by comparing the known with the FEM results of two specific parameters, namely, (a) the maximum displacement and (b) the peak stress in a coarse-meshed geometry. We then vary the mesh size and element type for each code to obtain grid convergence and to answer two questions on FEM and failure analysis in general: (Q-1) Given the results of two or more FEM solutions, how do we express uncertainty for each solution and the combined? (Q-2) Given a complex structure with a small number of tests on material properties, how do we simulate a failure scenario and predict time to collapse with confidence bounds? To answer the first question, we propose an easy-to-implement metrology-based approach, where each FEM simulation in a grid-convergence sequence is considered a “numerical experiment,” and a quantitative uncertainty is calculated for each sequence of grid convergence. To answer the second question, we propose a progressively weakening model based on a small number (e.g., 5) of tests on ultimate strength such that the failure of the weakest column of the grillage causes a load redistribution and collapse occurs only when the load redistribution leads to instability. This model satisfies the requirement of a metrology-based approach, where the time to failure is given a quantitative expression of uncertainty. We conclude that in today’s computing environment and with a precomputational “design of numerical experiments,” it is feasible to “quantify” uncertainty in FEM modeling and progressive failure analysis.


Open Physics ◽  
2014 ◽  
Vol 12 (9) ◽  
Author(s):  
Leszek Dobrzański ◽  
Marek Szindler ◽  
Aleksandra Drygała ◽  
Magdalena Szindler

AbstractThe paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.


Sign in / Sign up

Export Citation Format

Share Document