Specific Area Planar and Cross-Sectional Lift-Out Techniques: Procedures and Novel Applications

2000 ◽  
Author(s):  
Raghaw S. Rai ◽  
Swaminathan Subramanian ◽  
Stewart Rose ◽  
James Conner ◽  
Phil Schani ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Ion Beam ◽  
Specific Area ◽  
Cross Sectional ◽  
Site Specific ◽  
Focussed Ion Beam ◽  
Lattice Images ◽  
Novel Applications

Abstract Conventional focussed ion beam (FIB) based specific area transmission electron microscopy (TEM) sample preparation techniques usually requires complex grinding and gluing steps before final FIB thinning of the sample to electron transparency (<0.25 μm). A novel technique known as lift-out, plucking or pullout method that eliminates all the pre-FIB sample preparation has been developed for specific area TEM sample preparation by several authors. The advantages of the lift-out procedure include reduced sample preparation time and possibility of specific area TEM sample preparation of most components of integrated circuit with almost no geometric or dimensional limitations. In this paper, details of liftout method, developed during the present work, for site specific x-sectional and a new site specific planar sample preparation are described. Various methodologies are discussed to maximize the success rate by optimizing the factors that affect the technique. In failure analysis, the geometric and dimensional flexibility offered by the lift-out technique can be used to prepare specific area TEM sample of back thinned die, small particles and packaged parts. Such novel applications of lift-out technique in failure analysis are discussed with the examples of TEM results obtained from GaAs and Si based devices. Importantly, it was possible to obtain high resolution lattice images from the lift-out samples transferred on holey carbon supported 3mm copper grids.

Fibxtem— Focussed Ion Beam Milling for TEM Sample Preparation

1991 ◽  
Vol 254 ◽  
Author(s):  
David P. Basile ◽  
Ron Boylan ◽  
Brian Baker ◽  
Kathy Hayes ◽  
David Soza
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Protective Layer ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Area Of Interest ◽  
Focussed Ion Beam

AbstractIn the semiconductor industry, shrinking geometries and increasing process complexity have greatly increased the demand for TEM analysis of specific submicron regions. Until recently, samples of this nature have been difficult if not impossible to prepare. We have combined cross-sectional TEM sample preparation (XTEM) and the precise material sputtering of focussed ion beam milling (FIB) to thin samples to electron transparency. We call this sample preparation technique FIBXTEM.Three advantages of this technique are: 1) The area of interest can be analyzed in the scanning electron microscope before final thinning; 2) Any specific defect area becomes a candidate for TEM analysis, including failed sub-micron structures; and 3) Samples are generally artifact-free and of uniform thickness.Key elements of the FIBXTEM technique include precision planar polishing, unique holders for mounting and transferring samples between systems, and the FIB-induced deposition of a sacrificial protective layer over the area of interest during ion thinning.This technique extends the use of TEM analysis into new areas of semiconductor process development and failure analysis. Recent applications for materials problem solving and failure analysis are discussed.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

High-Throughput, Site-Specific Sample Prep of Ultra-Thin TEM Lamella for Process Metrology and Failure Analysis

2012 ◽  
Author(s):  
Roger Alvis ◽  
Jeff Blackwood ◽  
Sang-Hoon Lee ◽  
Matthew Bray
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Process Monitoring ◽  
High Throughput ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Memory Devices ◽  
Site Specific ◽  
Critical Dimensions ◽  
Tem Lamella

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

A Method for Preparation of Site-Specific Multiple Samples of Semiconductor Material for Transmission Electron Microscopy

2001 ◽  
Vol 7 (S2) ◽  
pp. 948-949
Author(s):  
R. S. Rai ◽  
S. Bagchi ◽  
L. Duncan ◽  
L. Prabhu ◽  
J. Beck ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Ion Beam ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Site Specific ◽  
New Approach ◽  
Area Of Interest ◽  
Transmission Electron

In recent years, the availability of focused ion beam (FIB) milling systems has given a much-needed boost for transmission electron microscopy (TEM) as a technique for site-specific analysis. Much progress has been made in the area of site-specific cross-sectional and planar TEM sample preparation techniques. However, a continuing need exists to reduce the sample preparation time, in order to improve TEM cycle time for better support of process development, yield improvement and production in a high-volume industrial environment. Thus, a faster TEM sample preparation technique is always desirable to meet this demand. A new approach to TEM sample preparation is described in this paper.Following the new approach developed in the present work, one can prepare on a single TEM grid at least two different cross-sectional samples of site-specific device structures or up to four different cross-sectional samples of blanket films. Two different samples, each containing an area of interest near the center, are cleaved or cut to a width of about 1.25 mm; these samples may be from two separate locations of a wafer, or from two different wafers where TEM analyses are required.

A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits

1998 ◽  
Author(s):  
S. Subramanian ◽  
P. Schani ◽  
E. Widener ◽  
P. Liston ◽  
J. Moss ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Ion Beam ◽  
Preparation Technique ◽  
Mechanical Grinding ◽  
Cross Sectional ◽  
Plan View ◽  
The Cross

Abstract A selected area planar TEM (SAPTEM) sample preparation technique for failure analysis of integrated circuits using a transmission electron microscope has been developed. The technique employs a combination of mechanical grinding, selective wet/dry chemical etching (if required) and a two step focused ion beam IIFIB) milling. The mechanical grinding steps include: (a) a backside grind to achieve a die thickness less than 30 µm, (b) the support half ring glue, and (c) a cross-section grind from one side to reach less than 35 pm to the failing site. A selective wet or dry chemical etch is applied before, between,, or after FIB thinning depending on the nature of problem and device components. The FIB milling steps involve: (is) a high ion current cross-sectional cut to reach as close as 5-8 µm to the area of interest (b) a final planar thinning with the ion beam parallel to the surface of the die. The plan view procedure offers unique geometric advantage over the cross-section method for failure analysis of problems that are limited to silicon or certain layers of the device. Iln the cross-sectional approach, a thin section (thickness less than 250 µm) of a device is available for failure analysis, whereas in the planar procedure a 20 µm2 area of any layer (thickness less than 250 µm) of the device is available. The above advantage has been successfully exploited to identify and solve the following prablems in fast static random access memories (FSRAM): (i) random gateoxide rupture that resulted in single bit failures, (ii) random dislocations from the buried contact trenching that caused single bit failures and general silicon defectivity (e.g. implant damage and spacer edge defects), and (iii) interracial reactions.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

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