Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement

2003 ◽  
Author(s):  
P. Tangyunyong ◽  
T. A. Hill ◽  
C. Y. Nakakura ◽  
J. M. Soden ◽  
E. I. Cole ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Product Development ◽  
Analytical Techniques ◽  
Yield Enhancement ◽  
Product Development Process ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Identification

Abstract Transmission electron microscopy (TEM) [1] and scanning capacitance microscopy (SCM) [2] have become common failure analysis tools at Sandia for new product development, process validation, and yield enhancement. These two techniques provide information that cannot be obtained with other analytical techniques. The information provided by these two techniques has been instrumental in identifying the root causes of several yield-limiting defects in CMOS IC technologies at Sandia. This paper describes an example of how TEM and SCM have been used to identify the root causes of SOI device failures. The corrective actions taken to reduce defects and improve yield are also described.

Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors

2005 ◽  
Author(s):  
M.L. Anderson ◽  
P. Tangyunyong ◽  
T.A. Hill ◽  
C.Y. Nakakura ◽  
T.J. Headley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Product Development ◽  
Yield Enhancement ◽  
Product Development Process ◽  
Product Lines ◽  
Scanning Capacitance Microscopy ◽  
Transmission Electron ◽  
Complementary Techniques ◽  
Analytical Tools

Abstract By combining transmission electron microscopy (TEM) [1] with scanning capacitance microscopy (SCM) [2], it is possible to enhance our understanding of device failures. At Sandia, these complementary techniques have been utilized for failure analysis in new product development, process validation, and yield enhancement, providing unique information that cannot be obtained with other analytical tools. We have previously used these instruments to identify the root causes of several yield-limiting defects in CMOS device product lines [3]. In this paper, we describe in detail the use of these techniques to identify electrically active silicon dislocations in failed SRAMs and to study the underlying leakage mechanisms associated with these defects.

Metallurgical Analysis of a Hopewell Copper Earspool

1971 ◽  
Vol 36 (3) ◽  
pp. 358-361 ◽  
Author(s):  
Arlene L. Fraikor ◽  
James J. Hester ◽  
Frederick J. Fraikor
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cold Working ◽  
Analytical Techniques ◽  
Fabrication Process ◽  
Micro Hardness ◽  
Transmission Electron ◽  
Metallurgical Analysis

AbstractA prehistoric Hopewell copper earspool was analyzed by a number of metallurgical techniques including transmission electron microscopy. While optical photomicrographs and micro-hardness data suggest that the final fabrication process was annealing, transmission electron microscopy indicates that some final cold working was applied. This paper illustrates a new application of physical analytical techniques to archaeology.

The Analyses of Anthropogenic Atmospheric Particulates by EM

1990 ◽  
Vol 48 (2) ◽  
pp. 547-547
Author(s):  
Philip A. Russell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Fine Particles ◽  
Analytical Techniques ◽  
Bulk Sample ◽  
Airborne Particulates ◽  
Discrete Particle ◽  
Transmission Electron ◽  
Physical And Chemical ◽  
Scanning Electron

This presentation will summarize fourteen years of research on the physical and chemical nature of particulates suspended in the earths atmosphere utilizing scanning electron microscopy and, to a lesser extent, transmission electron microscopy. Topics to be discussed include (1) the rationale for using electron microscopy to study airborne particulates, (2) methods for collecting airborne particulates, (3) methods of analysis and (4) a summary of results. Examples will demonstrate how conclusions about the nature and source of collected particles can differ between bulk sample analyses and discrete particle analyses. Without the input from discrete particle analyses, bulk analytical techniques may produce serious errors in the apportionment of airborne particulates to specific sources.The scanning electron microscope (SEM) and transmission electron microscopy (TEM) have proven themselves to be the preferred instruments to use in the study of discrete fine particles because they permit sufficient resolution and analytical capabilities to examine the structure and chemistry of individual particles less than a few micrometers in diameter.

Investigation of Passivation Damage from the Backside

2005 ◽  
Author(s):  
Sam Subramanian ◽  
Ed Widener ◽  
Tony Chrastecky ◽  
Darryl Jones ◽  
Bill W. Jones ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Failure Mode ◽  
Cross Section ◽  
Packaging Process ◽  
Root Cause ◽  
Defect Location ◽  
Optical Inspection ◽  
Transmission Electron ◽  
Section Sample

Abstract Passivation damage, a common failure mode in microelectronics circuitry, can be easily identified by optical inspection in the form of a local 'discoloration' after exposing the die to a chemical that would penetrate through the crack and attacks metal lines. Unfortunately, this process destroys evidence of what damaged the passivation, since it attacks the damaged region. As a result, in many cases, the mechanism by which the passivation damage occurred is unclear. This problem is addressed in this paper by a procedure to examine passivation damage by transmission electron microscopy (TEM) of a cross-section sample prepared from the backside and without exposing the die from the top side. The backside approach was successfully used to assign the root cause of the passivation damage to packaging process. A topside approach to characterize the passivation damaged region can result in destruction of evidence at the defect location.

Highly Automated Transmission Electron Microscopy Tomography for Defect Understanding

2011 ◽  
Author(s):  
James J. Demarest ◽  
Hong-Ying Zhai
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Significant Advance ◽  
Data Set ◽  
Root Cause ◽  
Dual Beam ◽  
Resource Needs ◽  
Transmission Electron ◽  
Time Required ◽  
High Level

Abstract Imaging tomography by transmission electron microscopy (TEM) is a technique which has been growing in popularity in recent years, yet it has not been widely applied to semiconductor defect studies and root cause determination [1- 3]. In part this is due to the complex equipment, computing needs, and microscope time required to generate the various images which ultimately compose the data set. However, the latest generation of TEMs—with their high level of stability and automation—are greatly reducing the resource needs to create high quality and informative movies of defects rotating about a central axis. One significant advance is the reduction in time required to fabricate a sample and perform the data acquisition by TEM. Today’s microscopes allow for sample fabrication to take place in a few hours or less and can acquire more than 100 images in about an hour at different sample tilt conditions with minimal analyst intervention. This paper describes using automated TEM sample preparation with dual beam focused ion beams (previously reported [4]) in conjunction with automated tomography software on a state-of-the-art TEM. By using an advanced tomography holder ±70° of tilt can be obtained. This is a powerful way to view defects as the failure can be viewed through more than 90° of rotation. Consequently a more complete understanding of the failure site can be obtained over a typical single projection TEM image. This can greatly facilitate root cause determination in a timely manner.

Applications of Transmission Electron Microscopy and Secondary Ion Mass Spectrometry on Crystal Defect Analysis and Electronic Characterization of Advanced 512Mb DRAM

2006 ◽  
Author(s):  
Serena Lu ◽  
Esther Chen ◽  
Lang-Yu Huang ◽  
Jian-Shing Luo ◽  
Jeremy D. Russell
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Yield Enhancement ◽  
Crystal Defect ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Abstract The capabilities of analytical transmission electron microscopy (TEM), such as high spatial resolution, micro-chemical analysis, etc., have led to an increasingly essential role for TEM-based analysis in process development, defect identification, yield enhancement, and root-cause failure analysis with the dynamic random access memory (DRAM) industry. In this article, several examples are reported to carry out the applications of TEM and secondary ion mass spectrometry on crystal defect analysis and electronic characteristics of advanced 512 Mb DRAMs.

scholarly journals Transmission electron microscopy for wood and fiber analysis – A Review

BioResources ◽  
2015 ◽  
Vol 10 (3) ◽  
pp. 6230-6261
Author(s):  
Mehedi Reza ◽  
Eero Kontturi ◽  
Anna-Stiina Jääskeläinen ◽  
Tapani Vuorinen ◽  
Janne Ruokolainen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cell Wall ◽  
Imaging Techniques ◽  
Analytical Techniques ◽  
Preparation Methods ◽  
Fiber Analysis ◽  
Transmission Electron ◽  
Cell Wall Polymers ◽  
Tension And Compression

This review describes use of transmission electron microscopy (TEM) in wood and fiber analysis. Analytical techniques and sample preparation methods are used to localize substructures of the cell wall polymers and are discussed in this review. The ultrastructural features of the wood cell walls, the structures formed by microfibrils, and the distribution of cell wall polymers, as revealed by TEM, are covered. Research investigating the distribution of lignin in tension and compression woods using TEM is reviewed. Different kinds of wood biodegrading enzymes localized using TEM are mentioned. Additional features of TEM, i.e., 3D imaging, analytical TEM, and electron diffraction are discussed. Lastly, a comparison between TEM and other imaging techniques used for wood and fiber research are made. Thus, this review provides insight into the contribution of TEM in wood research since its invention and demonstrates how to use it more effectively in the future.

Sign in / Sign up

Export Citation Format

Share Document