Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors

2005 ◽  
Author(s):  
M.L. Anderson ◽  
P. Tangyunyong ◽  
T.A. Hill ◽  
C.Y. Nakakura ◽  
T.J. Headley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Product Development ◽  
Yield Enhancement ◽  
Product Development Process ◽  
Product Lines ◽  
Scanning Capacitance Microscopy ◽  
Transmission Electron ◽  
Complementary Techniques ◽  
Analytical Tools

Abstract By combining transmission electron microscopy (TEM) [1] with scanning capacitance microscopy (SCM) [2], it is possible to enhance our understanding of device failures. At Sandia, these complementary techniques have been utilized for failure analysis in new product development, process validation, and yield enhancement, providing unique information that cannot be obtained with other analytical tools. We have previously used these instruments to identify the root causes of several yield-limiting defects in CMOS device product lines [3]. In this paper, we describe in detail the use of these techniques to identify electrically active silicon dislocations in failed SRAMs and to study the underlying leakage mechanisms associated with these defects.

Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement

2003 ◽  
Author(s):  
P. Tangyunyong ◽  
T. A. Hill ◽  
C. Y. Nakakura ◽  
J. M. Soden ◽  
E. I. Cole ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Product Development ◽  
Analytical Techniques ◽  
Yield Enhancement ◽  
Product Development Process ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Identification

Abstract Transmission electron microscopy (TEM) [1] and scanning capacitance microscopy (SCM) [2] have become common failure analysis tools at Sandia for new product development, process validation, and yield enhancement. These two techniques provide information that cannot be obtained with other analytical techniques. The information provided by these two techniques has been instrumental in identifying the root causes of several yield-limiting defects in CMOS IC technologies at Sandia. This paper describes an example of how TEM and SCM have been used to identify the root causes of SOI device failures. The corrective actions taken to reduce defects and improve yield are also described.

Comparison of Elemental Detection Using Microcalorimetry, SIMS, AES and EDS (SEM, STEM, and TEM)

2000 ◽  
Vol 6 (S2) ◽  
pp. 128-129
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
D. A. Wollman ◽  
M. Antonell ◽  
R. B. Irwin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Transmission Electron ◽  
Cu Contamination ◽  
Scanning Transmission ◽  
Semiconductor Fabrication ◽  
Electron Spectrometry ◽  
Elemental Detection ◽  
Analytical Tools

Cu contamination has become a larger concern as more semiconductor fabrication facilities switch from aluminum to Cu interconnects. The resolution limits of several analytical tools are compared to determine the optimum analysis methods for detecting Cu contamination in semiconductor materials. The elemental detection limits of Secondary Ion Mass Spectrometry (SIMS), Auger Electron Spectrometry (AES), Microcalorimetry and Energy Dispersive Spectrometry (EDS) systems on Scanning Electron Microscopy (SEM), Scanning Transmission Electron Microscopy (STEM), and Transmission Electron Microscopy (TEM) instruments are evaluated for Cu in WSix.Two different samples were used in this study. One sample has a high uniform concentration (0.9% atomic, 0.7 wt.%) of Cu that was incorporated during the sputter deposition of WSi2. A lower concentration was ion implanted with 63Cu to a dose of lel4 cm-2 and has a peak concentration of lel9 cm"3, or 0.02% atomic.

Application of Channeling Techniques and High Resolution Transmission Electron Microscopy to Ion-Beam Damaged Zircon

1994 ◽  
Vol 373 ◽  
Author(s):  
N. Bordes ◽  
R.C. Ewing
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Radiation Effects ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Layer Depth ◽  
Damage Layer ◽  
Transmission Electron ◽  
Complementary Techniques

AbstractZircon (ZrSiO4) samples were irradiated at 100K with 400 keV Ar+ and Xe+ ion beams to fluences ranging from 5x1013 to 5x1015 ions/cm2. Rutherford backscattering spectroscopy (RBS) experiments were completed to study the dechanneling of He ions in the irradiated zircons. Cross-sections of some irradiated samples were prepared, and the zircon microstructure was examined by highresolution transmission electron microscopy (HRTEM). At doses greater than 8x1014 ions/cm2 or 0.8 dpa (displacements per atom), RBS channeling experiments showed the presence of a disordered or amorphous layer. The electron microscopy confirmed the presence of an amorphous layer extending over a depth of 300 to 350 nm (Ar+ irradiation) and 200 nm (Xe+ irradiation) in agreement with the damage layer depth calculated by TRIM. At depths extending beyond the damage peak, TEM reveals an amorphous layer with “islands” of crystalline material of σ 30 nm in size. These experiments show that RBS and TEM are complementary techniques in investigating radiation effects in irradiations of bulk ceramic.

Applications of Transmission Electron Microscopy and Secondary Ion Mass Spectrometry on Crystal Defect Analysis and Electronic Characterization of Advanced 512Mb DRAM

2006 ◽  
Author(s):  
Serena Lu ◽  
Esther Chen ◽  
Lang-Yu Huang ◽  
Jian-Shing Luo ◽  
Jeremy D. Russell
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Yield Enhancement ◽  
Crystal Defect ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Abstract The capabilities of analytical transmission electron microscopy (TEM), such as high spatial resolution, micro-chemical analysis, etc., have led to an increasingly essential role for TEM-based analysis in process development, defect identification, yield enhancement, and root-cause failure analysis with the dynamic random access memory (DRAM) industry. In this article, several examples are reported to carry out the applications of TEM and secondary ion mass spectrometry on crystal defect analysis and electronic characteristics of advanced 512 Mb DRAMs.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Direct Observation of Heat Exchanger Deposits by Cross Sectioning

1967 ◽  
Vol 25 ◽  
pp. 364-365
Author(s):  
R. W. Anderson ◽  
D. L. Senecal
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heat Exchanger ◽  
Direct Observation ◽  
Cross Sections ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Flowing Water ◽  
Transmission Electron ◽  
Deposit Layer

A problem was presented to observe the packing densities of deposits of sub-micron corrosion product particles. The deposits were 5-100 mils thick and had formed on the inside surfaces of 3/8 inch diameter Zircaloy-2 heat exchanger tubes. The particles were iron oxides deposited from flowing water and consequently were only weakly bonded. Particular care was required during handling to preserve the original formations of the deposits. The specimen preparation method described below allowed direct observation of cross sections of the deposit layers by transmission electron microscopy.The specimens were short sections of the tubes (about 3 inches long) that were carefully cut from the systems. The insides of the tube sections were first coated with a thin layer of a fluid epoxy resin by dipping. This coating served to impregnate the deposit layer as well as to protect the layer if subsequent handling were required.

Phase Transformations in Ti-7w/oMo-3w/oMe Alloy

1974 ◽  
Vol 32 ◽  
pp. 514-515
Author(s):  
S. Fujishiro
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Tensile Strength ◽  
Mechanical Processing ◽  
Ray Method ◽  
X Ray ◽  
Transmission Electron ◽  
Water Quench ◽  
Alpha Beta

The mechanical properties of three titanium alloys (Ti-7Mo-3Al, Ti-7Mo- 3Cu and Ti-7Mo-3Ta) were evaluated as function of: 1) Solutionizing in the beta field and aging, 2) Thermal Mechanical Processing in the beta field and aging, 3) Solutionizing in the alpha + beta field and aging. The samples were isothermally aged in the temperature range 300° to 700*C for 4 to 24 hours, followed by a water quench. Transmission electron microscopy and X-ray method were used to identify the phase formed. All three alloys solutionized at 1050°C (beta field) transformed to martensitic alpha (alpha prime) upon being water quenched. Despite this heavily strained alpha prime, which is characterized by microtwins the tensile strength of the as-quenched alloys is relatively low and the elongation is as high as 30%.

Two- or three-way observations of the identical cell elements within the same sections by LM, TEM and/or SEM

1978 ◽  
Vol 36 (2) ◽  
pp. 82-83 ◽  
Author(s):  
Nakazo Watari ◽  
Yasuaki Hotta ◽  
Yoshio Mabuchi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Fine Structure ◽  
Light Microscopy ◽  
Thin Sections ◽  
Transmission Electron ◽  
Identical Cell ◽  
Electron Microscopes ◽  
Scanning Electron

It is very useful if we can observe the identical cell elements within the same sections by light microscopy (LM), transmission electron microscopy (TEM) and/or scanning electron microscopy (SEM) sequentially, because, the cell fine structure can not be indicated by LM, while the color is; on the other hand, the cell fine structure can be very easily observed by EM, although its color properties may not. However, there is one problem in that LM requires thick sections of over 1 μm, while EM needs very thin sections of under 100 nm. Recently, we have developed a new method to observe the same cell elements within the same plastic sections using both light and transmission (conventional or high-voltage) electron microscopes.In this paper, we have developed two new observation methods for the identical cell elements within the same sections, both plastic-embedded and paraffin-embedded, using light microscopy, transmission electron microscopy and/or scanning electron microscopy (Fig. 1).

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