A Study of the Radiation Damage at the Opened/Un-Opened Contact of a Deep Trench Capacitor DRAM

2004 ◽  
Author(s):  
Jen-Lang Lue ◽  
Michael Hsieh ◽  
Danny Kao
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Radiation Damage ◽  
Ion Beam ◽  
Damage Zone ◽  
Metal Deposition ◽  
Normal Sample ◽  
Si Substrate ◽  
Cross Sectional ◽  
Deep Trench

Abstract This paper studies the effects of an electron beam and an ion beam in sample preparation at the borderless bit-line contact (CB) between a transistor and a bit line in a deep trench capacitor DRAM [1] using the Transmission Electron Microscope (TEM) and the Electron Energy Loss Spectroscope (EELS). An abnormal region in the Si substrate was observed using cross-sectional TEM (XTEM) analysis at both the opened and un-opened CB contacts when normal sample preparation procedures were applied. CBED (Convergent Beam Electron Diffraction) in the TEM verifies this region is a structure of amorphous Si. The EELS spectrum shows the relative thickness (t/λ) of the TEM sample at this amorphous region is similar to that of the single crystal Si substrate. Experimental results demonstrated that this region was the result of radiation damage caused by either the ion-beam scan or the ion-beam Pt metal deposition required for sample preparation in the Focused Ion Beam (FIB) system. This radiation damage was not caused by inline wafer processing. However, the radiation damage zone for an un-opened contact is smaller than that for an opened contact. The size of the radiation damage zone increases relative to the time of the ion beam exposure. Using electron-beam scan and electron-beam Pt metal deposition can prevent this radiation damage from occurring.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

Microstructures of The Electron-Beam Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
D.J. Cheng ◽  
S. Yeh ◽  
G.F. Chi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Second Phase ◽  
Si Substrate ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Diffraction Patterns

AbstractPolycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.

Specific Area Planar and Cross-Sectional Lift-Out Techniques: Procedures and Novel Applications

2000 ◽  
Author(s):  
Raghaw S. Rai ◽  
Swaminathan Subramanian ◽  
Stewart Rose ◽  
James Conner ◽  
Phil Schani ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Ion Beam ◽  
Specific Area ◽  
Cross Sectional ◽  
Site Specific ◽  
Focussed Ion Beam ◽  
Lattice Images ◽  
Novel Applications

Abstract Conventional focussed ion beam (FIB) based specific area transmission electron microscopy (TEM) sample preparation techniques usually requires complex grinding and gluing steps before final FIB thinning of the sample to electron transparency (<0.25 μm). A novel technique known as lift-out, plucking or pullout method that eliminates all the pre-FIB sample preparation has been developed for specific area TEM sample preparation by several authors. The advantages of the lift-out procedure include reduced sample preparation time and possibility of specific area TEM sample preparation of most components of integrated circuit with almost no geometric or dimensional limitations. In this paper, details of liftout method, developed during the present work, for site specific x-sectional and a new site specific planar sample preparation are described. Various methodologies are discussed to maximize the success rate by optimizing the factors that affect the technique. In failure analysis, the geometric and dimensional flexibility offered by the lift-out technique can be used to prepare specific area TEM sample of back thinned die, small particles and packaged parts. Such novel applications of lift-out technique in failure analysis are discussed with the examples of TEM results obtained from GaAs and Si based devices. Importantly, it was possible to obtain high resolution lattice images from the lift-out samples transferred on holey carbon supported 3mm copper grids.

Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation

2011 ◽  
Vol 189-193 ◽  
pp. 1233-1237 ◽  
Author(s):  
Tao Chen ◽  
Duo Shu Wang ◽  
Yu Qing Xiong
Keyword(s):  
Electron Beam ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Beam Energy ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Average Stress ◽  
Si Substrate ◽  
Microstructure Change ◽  
Main Factors

TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

TEM/FIB Technical Solutions to Electron Beam Induced Radiation Damage to Low K/Ultra Low K Dielectrics in Semiconductor Failure Analysis

2012 ◽  
Author(s):  
Liu Binghai ◽  
Chen Ye ◽  
Mo Zhiqiang ◽  
Zhao Si Ping ◽  
Wang Chue Yuin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Radiation Damage ◽  
Low Dose ◽  
Imaging Techniques ◽  
Single Beam ◽  
Electron Microscopes ◽  
Technical Solutions ◽  
Low K

Abstract Electron-beam induced radiation damage can give rise to large structural collapse and deformation of low k and ultra low k IMD in semiconductor devices, posing great challenges for failure analysis by electron microscopes. Such radiation damage has been frequently observed during both sample preparation by dual-beam FIB and TEM imaging. To minimize radiation damage, in this work we performed systematic studies on every possible failure analysis step that could introduce radiation damage, i.e., pre-FIB sample preparation, FIB milling, and TEM imaging. Based on these studies, we utilized comprehensive technical solutions to radiation damage by each failure analysis step, i.e., low-dose/low-kV FIB and low-dose TEM techniques. We propose and utilize the low-dose TEM imaging techniques on conventional TEM tools without using low-dose imaging control interface/software. With these new methodologies or techniques, the electron-beam induced radiation damage to ultra low k IMD has been successfully minimized, and the combination of single-beam FIB milling and low-dose TEM imaging techniques can reduce structure collapse and shrinkage to almost zero.

Cross-Sectional Sample Preparation Techniques for 2D Doping Profiling of Specific Site by SCM

2007 ◽  
Author(s):  
Tae-Kwon Lee ◽  
Tae-Sun Back ◽  
Jong-Hyeop Kim ◽  
Yoon-Baek Park ◽  
Ho-Joung Kim ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Site ◽  
Contact Mode ◽  
Cross Sectional ◽  
Precise Method ◽  
Front End ◽  
Capacitance Variation ◽  
Preparation Techniques

Abstract Scanning capacitance microscopy (SCM) is an SPM technique which measures capacitance variation between tip and sample generated by applied AC bias while the tip is scanning in contact mode. Focused ion beam (FIB) milling is the more precise method to perform cross-sectioning of a specific site. The surface amorphization and charge trap layers formed during FIB machining affect the SCM dC/dV signal. This article demonstrates that micro-cleaving and FIB milling are capable of preparing a cross-sectional sample for 2D doping profiling of a specific site for SCM observation. Using the Micro-cleaving technique, a cross-sectional sample can be prepared easily with higher accuracy and shorter time than using a polishing method. However, Micro-cleaving can't be used by itself in the case of cross-sectioning a pattern formed by front end processing of sub-micron patterns. The FIB technique can assist the Micro-cleaving technique in cleaving of front end patterns.

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