Lead Frame Metal Migration in an Encapsulated IC Package

2008 ◽  
Author(s):  
William Eslinger
Keyword(s):  
Metal Oxide ◽  
Failure Mechanism ◽  
Integrated Circuit ◽  
Lead Frame ◽  
Low Resistance ◽  
Die Attach ◽  
Metal Migration ◽  
Silicon Device ◽  
Ic Package

Abstract This case study details a latent integrated circuit (IC) failure mechanism caused by the migration of silver (Ag) inside the encapsulated package of a CMOS (complementary metal-oxide-silicon) device. The plating of the lead frame was the source of the migrated silver, which was redeposited along the interface between the die attach epoxy and the plastic encapsulate. The resulting metallic ‘stringers’ bridged adjacent lead frame legs over distances greater than 150 μm and created relatively low-resistance paths capable of carrying 100’s of micro-amps.

Application of Lock-in Thermography on PCB for Fault Localization and Validation of Failure Mechanism Due to External Discrete Component Variation

2010 ◽  
Author(s):  
William Ng ◽  
Kevin Weaver ◽  
Zachary Gemmill ◽  
Herve Deslandes ◽  
Rudolf Schlangen
Keyword(s):  
Failure Mechanism ◽  
Integrated Circuit ◽  
Printed Circuit Board ◽  
Hot Spot ◽  
Circuit Board ◽  
Discrete Component ◽  
Printed Circuit ◽  
Thermal Signature ◽  
Lock In

Abstract This paper demonstrates the use of a real time lock-in thermography (LIT) system to non-destructively characterize thermal events prior to the failing of an integrated circuit (IC) device. A case study using a packaged IC mounted on printed circuit board (PCB) is presented. The result validated the failing model by observing the thermal signature on the package. Subsequent analysis from the backside of the IC identified a hot spot in internal circuitry sensitive to varying value of external discrete component (inductor) on PCB.

Sequential Reflow-Process Optimization to Reduce Die-Attach Solder Voids

2015 ◽  
Vol 137 (2) ◽  
Author(s):  
Youmin Yu ◽  
Victor Chiriac ◽  
Yingwei Jiang ◽  
Zhijie Wang
Keyword(s):  
Heat Transfer ◽  
Theoretical Prediction ◽  
Integrated Circuit ◽  
Sequential Optimization ◽  
Solder Paste ◽  
Lead Frame ◽  
Reflow Process ◽  
Sequential Method ◽  
Die Attach ◽  
Solder Reflow

Solder voids are detrimental to the thermal, mechanical, and reliability performance of integrated circuit (IC) packages and must be controlled within certain specifications. A sequential method of optimizing solder-reflow process to reduce die-attach solder voids in power quad flat no-lead (QFN) packages is presented. The sequential optimization consists, in turn, of theoretical prediction, heat transfer comparison, and experimental validation. First, the theoretical prediction uses calculations to find the optimal pause location and time for a lead frame strip (with dies bonded to it by solder paste) to receive uniform heat transfer during the solder-reflow stage. Next, reflow profiles at different locations on the lead frame strip are measured. Heat transfer during the reflow stage at these locations is calculated from the measured reflow profiles and is compared to each other to confirm the theoretical prediction. Finally, only a minimal number of actual trials are conducted to verify the predicted and confirmed optimal process. Since the theoretical prediction and heat transfer comparison screens out most of the unnecessary trials which must be conducted in common design of experiment (DoE) and trial-and-error methods, the sequential optimization method saves significant time and cost.

scholarly journals Improvement of Productivity through the Reduction of Unexpected Equipment Faults in Die Attach Equipment

Processes ◽  
2020 ◽  
Vol 8 (4) ◽  
pp. 394
Author(s):  
You-Jin Park ◽  
Sun Hur
Keyword(s):  
Statistical Analysis ◽  
Semiconductor Manufacturing ◽  
Critical Parameters ◽  
Process Equipment ◽  
Lead Frame ◽  
Front End ◽  
Lower Productivity ◽  
Die Attach

As one of the semiconductor back-end processes, die attach process is the process that attaches an individual non-defective die (or chip) produced from the semiconductor front-end production to the lead frame on a strip. With most other processes of semiconductor manufacturing, it is very important to improve productivity by lessening the occurrence of defective products generally represented as losses, and then find the fault causes which lower productivity of the die attach process. Thus, as the case study to analyze quantitatively the faults of the die attach process equipment, in this research, we developed analysis systems including statistical analysis functions to improve the productivity of die attach process. This research shows that the developed system can find the causes of equipment faults in die attach process equipment and help improve the productivity of the die attach process by controlling the critical parameters which cause unexpected equipment faults and losses.

Package Reliability and Integrity Improvements for a Thermally Enhance Non-Conductive Die Attach Adhesive for ASIC Devices on Exposed Pad Packages

2019 ◽  
Vol 2019 (1) ◽  
pp. 000091-000094
Author(s):  
Alvin Denoyo ◽  
Darwin De Lazo ◽  
Ivan Costa ◽  
Allen Menor
Keyword(s):  
Integrated Circuit ◽  
Primary Objective ◽  
Surface Enhancement ◽  
Material Compatibility ◽  
Humid Environment ◽  
Die Attach ◽  
Ic Package ◽  
Package Reliability ◽  
Delamination Failure

Abstract Polymers being used in a plastic-encapsulated integrated circuit (IC) package exposed to a humid environment absorbed moisture and expand resulting to a so called delamination failure. Weak or imperfect adhesions between the interfaces of the mold compound and adhesive unto the leadframe surface are often the main sources of these failures. In response to automotive requirements and to ensure excellent package reliability and integrity, delamination in all interfaces should then be eliminated. Thus the primary objective of this work is to fulfill the no delamination criteria in all interfaces after moisture soak for an exposed pad package. To satisfy these requirements, activities includes leadframe design improvements, surface enhancement and bill-of-material changes. With the design improvements implemented, still the material compatibility plays an important role in achieving improved package reliability.

Acoustic microscopy techniques for the inspection of integrated circuit devices and packages

1992 ◽  
Vol 50 (2) ◽  
pp. 966-967
Author(s):  
Thomas M. Moore
Keyword(s):  
Integrated Circuit ◽  
Acoustic Microscopy ◽  
Hybrid Technique ◽  
Frequency Scanning ◽  
Ic Packaging ◽  
Ic Package ◽  
Microscopy Techniques ◽  
Ic Package Inspection ◽  
Pulse Echo ◽  
Scanning Acoustic Microscope

In the last decade, a variety of characterization techniques based on acoustic phenomena have come into widespread use. Characteristics of matter waves such as their ability to penetrate optically opaque solids and produce image contrast based on acoustic impedance differences have made these techniques attractive to semiconductor and integrated circuit (IC) packaging researchers.These techniques can be divided into two groups. The first group includes techniques primarily applied to IC package inspection which take advantage of the ability of ultrasound to penetrate deeply and nondestructively through optically opaque solids. C-mode Acoustic Microscopy (C-AM) is a recently developed hybrid technique which combines the narrow-band pulse-echo piezotransducers of conventional C-scan recording with the precision scanning and sophisticated signal analysis capabilities normally associated with the high frequency Scanning Acoustic Microscope (SAM). A single piezotransducer is scanned over the sample and both transmits acoustic pulses into the sample and receives acoustic echo signals from the sample.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

Investigation of High Frequency Failures on a 0.35μm CMOS IC

1999 ◽  
Author(s):  
Alan Kennen ◽  
John F. Guravage ◽  
Lauren Foster ◽  
John Kornblum
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Integrated Circuit ◽  
Metal Layer ◽  
Ion Beam ◽  
Stress Test ◽  
Design For Test ◽  
Interface Failure ◽  
Serial Interface ◽  
High Impedance

Abstract Rapidly changing technology highlights the necessity of developing new failure analysis methodologies. This paper will discuss the combination of two techniques, Design for Test (DFT) and Focused Ion Beam (FIB) analysis, as a means for successfully isolating and identifying a series of high impedance failure sites in a 0.35 μm CMOS design. Although DFT was designed for production testing, the failure mechanism discussed in this paper may not have been isolated without this technique. The device of interest is a mixed signal integrated circuit that provides a digital up-convert function and quadrature modulation. The majority of the circuit functions are digital and as such the majority of the die area is digital. For this analysis, Built In Self Test (BIST) circuitry, an evaluation board for bench testing and FIB techniques were used to successfully identify an unusual failure mechanism. Samples were subjected to Highly Accelerated Stress Test (HAST) as part of the device qualification effort. Post-HAST electrical testing at 200MHz indicated that two units were non-functional. Several different functional blocks on the chip failed electrical testing. One part of the circuitry that failed was the serial interface. The failure analysis team decided to look at the serial interface failure mode first because of the simplicity of the test. After thorough analysis the FA team discovered increasing the data setup time at the serial port input allowed the device to work properly. SEM and FIB techniques were performed which identified a high impedance connection between a metal layer and the underlying via layer. The circuit was modified using a FIB edit, after which all vectors were read back correctly, without the additional set-up time.

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