Failure Analysis Methodology on Systematic Defect in ADC_PLL Ring Pattern Due to Plasma De-Chuck Process

2010 ◽  
Author(s):  
Ang Ghim Boon ◽  
Chen Changqing ◽  
Alfred Quah ◽  
Magdeliza ◽  
Indahwan Jony ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Root Cause ◽  
Path Tracing ◽  
Analysis Methodology ◽  
Wafer Fab ◽  
Problem Solving Process

Abstract In this paper, a low yield case relating to a systematic array of failures in a ring pattern due to ADC_PLL failures on low yielding wafers will be studied. A systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current imaging, layout path tracing, PVC and XTEM together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical in a wafer foundry in which there is minimal available data on the test condition setup to duplicate the exact failure. The ring pattern was due to systematically open via as a result of polymer built-up from plasma de-chuck issue. It would serve as a good reference for a wafer Fab that encounters such an issue.

Failure Analysis Methodology on Systematic Defect in N+ poly/NWELL Varactor in RF Analog_PLL due to Implanter Charging Issue

2012 ◽  
Author(s):  
Ang Ghim Boon ◽  
Chen Changqing ◽  
Ng Hui Peng ◽  
Neo Soh Ping ◽  
Magdeliza G ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Gate Oxide ◽  
Oxide Breakdown ◽  
Root Cause ◽  
Path Tracing ◽  
Analysis Methodology ◽  
Problem Solving Process ◽  
Access To Data ◽  
Analog Circuitry

Abstract In this paper, a zero yield case relating to a systematic defect in N+ poly/N-well varactor (voltage controlled capacitor) on the RF analog circuitry will be studied. The systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current Imaging and nano-probing, manual layout path tracing, FIB circuit edit, selective etching together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical for a foundry company with restricted access to data on test condition setup to duplicate the exact failure as well as no layout tracing available at time of analysis. The systematic defect was due to gate oxide breakdown as a result of implanter charging. It serves as a good reference to other wafer Fabs encountering such an issue.

Failure Analysis Methodology on Systematic Missing Cu in RAM Due to Cu CMP

2014 ◽  
Author(s):  
Ghim Boon Ang ◽  
Changqing Chen ◽  
Hui Peng Ng ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Removal Rate ◽  
Deep Dive ◽  
The Real ◽  
Root Cause ◽  
Analysis Methodology ◽  
Strong Emphasis ◽  
Cu Cmp

Abstract This paper places a strong emphasis on the importance of applying Systematic Problem Solving approach and use of appropriate FA methods and tools to understand the “real” failure root cause. A case of wafer center cluster RAM fail due to systematic missing Cu was studied. It was through a strong “inquisitive” mindset coupled with deep dive problem solving that lead to uncover the actual root cause of large Cu voids. The missing Cu was due to large Cu void induced by galvanic effects from the faster removal rate during Cu CMP and subsequently resulted in missing Cu. This highlights that the FA analyst’s mission is not simply to find defects but also play a catalyst role in root cause/failure mechanism understanding by providing supporting FA evidence (electrically/ physically) to Fab.

A Logical Problem Solving Process for High Via Resistance Root Cause Analysis

2008 ◽  
Author(s):  
K. Li ◽  
P. Liu ◽  
J. Teong ◽  
M. Lee ◽  
H. L. Yap
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
High Resistance ◽  
Cause Analysis ◽  
Logical Problem ◽  
Root Cause ◽  
Analysis Process ◽  
Problem Solving Process

Abstract This paper presents a case study on via high resistance issue. A logical failure analysis process EDCA (Effect, Defect, Cause, and Action) is successfully applied to find out the failure mechanism, pinpoint the root cause and solve the problem. It sets up a very good example of how to do tough failure analysis in a controllable way.

Failure Analysis Methodology on Unique 68mm Single Ring Pattern Due to Load Lock Burr

2011 ◽  
Author(s):  
A.C.T Quah ◽  
G. B. Ang ◽  
C. Q. Chen ◽  
David Zhu ◽  
M. Gunawardana ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Pattern ◽  
Root Cause ◽  
Analysis Methodology ◽  
Single Ring ◽  
Memory Failure

Abstract This paper describes a low yield case which results in a unique 68 mm single ring wafer sort failure pattern. A systematic problem solving approach with the application various FA techniques and detailed Fab investigation resolved the issue. The root cause for the unique ring failure pattern was due to a burr at the implanter load lock. The burr scratched and toppled the photoresist resulting in subsequent blocked well implantation and memory failure.

Device Characterization Using AFP Nanoprobing for the Localization of New Product Design Weakness

2013 ◽  
Author(s):  
Ghim Boon Ang ◽  
Alfred Quah ◽  
Changqing Chen ◽  
Si Ping Zhao ◽  
Dayanand Nagalingam ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Product Design ◽  
New Product ◽  
Analysis Tool ◽  
Deep Dive ◽  
Root Cause ◽  
Strong Emphasis ◽  
New Product Design ◽  
Testing Issue

Abstract This paper illustrated the beauty of AFP nano-probing as the critical failure analysis tool in localizing new product design weakness. A 40nm case of HTOL Pin Leakage due to Source/Drain punch-through at a systematic location was discussed. The root cause and mechanism was due to VDS overdrive testing issue. This paper placed a strong emphasis on systematic problem solving approach, deep dive and use of right FA approach/tool that are essentially critical to FA analysts in wafer foundry since there is always minimal available data provided. It would serve as a good reference to wafer Fab that encountered such issue.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Suspension ball joint failure analysis based on problem solving process

2006 ◽  
Author(s):  
Helena Osorio Fracasso ◽  
Artur Andrade ◽  
Sergio Cardoso ◽  
Henrique Satkunas ◽  
Marcus Zucchini
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Ball Joint ◽  
Joint Failure ◽  
Problem Solving Process

scholarly journals AN INDISPENSABLE ROLE OF COUNSELOR: THE BRIDGE BETWEEN COUPLES, STAKEHOLDERS AND RECONCILIATION FOR MARITAL DISPUTES

2021 ◽  
Vol 9 (66) ◽  
pp. 15376-15382
Author(s):  
Vandana Uday Shinde
Keyword(s):  
Problem Solving ◽  
Family Court ◽  
Counselor Educator ◽  
Root Cause ◽  
The Family ◽  
Marital Disputes ◽  
Problem Solving Process ◽  
The Stability ◽  
Primary Unit

The family is universally regarded as the primary unit of society and family tend to be very close knit. When the stability, faith and confidence of the members of the family are threatened by a dispute, people mostly approach to the elders of the family or other authority who has influence or NGOs. If it doesn’t settle there they approach to the arms of judiciary like police or court to stop the dispute or secure their right within the family. While working in the family court witnessed and intervened in such cases regularly. Counselors in family court are the key persons as every case filed in the family court are directed to counselors for amicable settlement. The counselors are helping couples realize the root cause of their problem and engaging them in the problem solving process by intervening as counselor, educator, mentor, mediator, negotiator, conciliator, facilitator, etc. Once the rapport is built then they act as friend and philosopher to the couple.

Fault Localization Improvement through an Intra-Cell Diagnosis Approach

2012 ◽  
Author(s):  
Zhenzhou Sun ◽  
Alberto Bosio ◽  
Luigi Dilillo ◽  
Patrick Girard ◽  
Aida Todri ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Critical Path ◽  
Experimental Results ◽  
Precise Localization ◽  
Localization Accuracy ◽  
Root Cause ◽  
Path Tracing ◽  
Critical Path Tracing ◽  
Defect Localization ◽  
Diagnosis Approach

Abstract Logic diagnosis is the process of isolating the source of observed errors in a defective circuit, so that a physical failure analysis can be performed to determine the root cause of such errors. In this paper, we propose a new “Effect-Cause” based intra-cell diagnosis approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing (CPT) here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.

Nanoprobing as an Essential and Fast Methodology in Identification of Failure’s Root Cause for Advanced Technology

2013 ◽  
Author(s):  
Yinzhe Ma ◽  
Chong Khiam Oh ◽  
Ohnmar Nyi ◽  
Chuan Zhang ◽  
Donald Nedeau ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Turnaround Time ◽  
Advanced Technology ◽  
Electrical Behavior ◽  
Root Cause ◽  
Front End

Abstract This paper highlights the use of nanoprobing as a crucial and fast methodology for failure analysis (FA) in sub 20nm with an improved semi-auto nanoprobing system. Nanoprobing has the capability to localize as well as characterize the electrical behavior of the malfunctioning device for a better understanding of the failure mechanism. It provides a valuable guide to choose a proper physical FA technique to identify the root cause of the failure. This established methodology helps to accelerate the FA turnaround time and improve the success rate. Its application to a few of the front end of line and one back end of line issues is highlighted in the paper.

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