Nanoprobing and EBAC for Improving Failure Analysis Success Rates on Sub-14nm Logic and SRAM

2018 ◽  
Author(s):  
John Masnik ◽  
Noor Jehan Saujauddin ◽  
Kevin Davidson ◽  
Esther P.Y. Chen
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Case Studies ◽  
Electrical Measurement ◽  
Success Rates ◽  
Electron Microscopic ◽  
Microscopic Scale ◽  
Static Technique

Abstract Nanoprobing, electrical probing (DC electrical measurement of semiconductors using nanoscale probes) on an electron microscopic scale, and EBAC, a high-resolution, static technique, can be used for isolating defects and improving failure analysis success rates on both logic and SRAM devices. This paper presents three case studies of subtle defects on a technology beyond 14nm that required nanoprobing.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

An electron microscopic study of a rapidly solidified Al-5 wt. % Co alloy

1987 ◽  
Vol 2 (5) ◽  
pp. 547-556 ◽  
Author(s):  
G. Van Tendeloo ◽  
Jyothi Menon ◽  
C. Suryanarayana
Keyword(s):  
Solid Solution ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Orientation Relationships ◽  
Electron Microscopic ◽  
Microscopic Scale ◽  
Resolution Electron ◽  
The Matrix ◽  
Aluminum Solid Solution ◽  
Rapidly Solidified

An Al-5 wt. % Co alloy has been rapidly solidified from the liquid state, resulting in the formation of a slightly supersaturated aluminum solid solution and the monoclinic Al9Co2 phase. High-resolution electron microscopy and electron diffraction have been extensively employed to characterize the as-solidified as well as the annealed foils. The high-resolution micrographs of the as-solidified solid solution showed the presence of clustering and D 1a - type ordering on an extremely small microscopic scale. Annealing at temperatures above 623 K resulted in the precipitation of Al9Co2 in the form of platelets arranged in a Widmanstätten pattern. Orientation relationships between the Al9Co2 platelets and the matrix have been established. Guinier-Preston zonelike platelets on close-packed {111} planes, however, have also been observed upon electron irradiation in the annealed alloys, presumably due to the enhanced diffusivity of cobalt atoms.

EBAC for Isolating Partially-Localized FEOL Electrical Shorts on Test Structures during Sub-14 nm Technology Development

2017 ◽  
Author(s):  
John Masnik ◽  
Noor Jehan Saujauddin ◽  
Kevin Davidson ◽  
Esther P.Y. Chen ◽  
Felix Beaudoin
Keyword(s):  
High Resolution ◽  
Case Studies ◽  
Technology Development ◽  
Static Technique

Abstract EBAC is a high-resolution, static technique that can be used for isolating electrical shorts, but it begins to fail for large, interconnected, test structures. In such cases, localization can be achieved when combined with optical localization techniques such as OBIRCH. This paper presents two case studies of subtle, FEOL shorts on a sub-14nm technology that required the resolution of EBAC

The High Resolution Appearance of Biological Substrates

1969 ◽  
Vol 27 ◽  
pp. 416-417
Author(s):  
Glen B. Haydon
Keyword(s):  
High Resolution ◽  
Phase Image ◽  
Biological Structure ◽  
Electron Microscopic ◽  
Thin Sections ◽  
Resolution Electron ◽  
Discrete Structures ◽  
Large Phase ◽  
Biological Substrates ◽  
High Resolution Electron Micrographs

High resolution electron microscopic study of negatively stained macromolecules and thin sections of tissue embedded in a variety of media are difficult to interpret because of the superimposed phase image granularity. Although all of the information concerning the biological structure of interest may be present in a defocused electron micrograph, the high contrast of large phase image granules produced by the substrate makes it impossible to distinguish the phase ‘points’ from discrete structures of the same dimensions. Theory predicts the findings; however, it does not allow an appreciation of the actual appearance of the image under various conditions. Therefore, though perhaps trivial, training of the cheapest computer produced by mass labor has been undertaken in order to learn to appreciate the factors which affect the appearance of the background in high resolution electron micrographs.

mRNA localization by Electron microscopic in situ hybridization

1991 ◽  
Vol 49 ◽  
pp. 430-431
Author(s):  
J. A. Pollock ◽  
M. Martone ◽  
T. Deerinck ◽  
M. H. Ellisman
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Nucleic Acids ◽  
Recombinant Dna ◽  
Light And Electron Microscopy ◽  
Electron Microscopic ◽  
High Voltage Electron Microscopy ◽  
Functional Sites ◽  
Voltage Electron

Localization of specific proteins in cells by both light and electron microscopy has been facilitate by the availability of antibodies that recognize unique features of these proteins. High resolution localization studies conducted over the last 25 years have allowed biologists to study the synthesis, translocation and ultimate functional sites for many important classes of proteins. Recently, recombinant DNA techniques in molecular biology have allowed the production of specific probes for localization of nucleic acids by “in situ” hybridization. The availability of these probes potentially opens a new set of questions to experimental investigation regarding the subcellular distribution of specific DNA's and RNA's. Nucleic acids have a much lower “copy number” per cell than a typical protein, ranging from one copy to perhaps several thousand. Therefore, sensitive, high resolution techniques are required. There are several reasons why Intermediate Voltage Electron Microscopy (IVEM) and High Voltage Electron Microscopy (HVEM) are most useful for localization of nucleic acids in situ.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Correlative video enhanced differential interference contrast light microscopy (VDIC)-LM), low-voltage high-resolution SEM (LV-HR-SEM), and high-voltage electron microscopy (HVEM) in the observation of gold-labelled surface antigens and the subjacent cytoskeletal matrix

1989 ◽  
Vol 47 ◽  
pp. 904-905
Author(s):  
Ralph M. Albrecht ◽  
Scott R. Simmons ◽  
Marek Malecki
Keyword(s):  
High Resolution ◽  
Light Microscopy ◽  
Low Voltage ◽  
Microscopic Analysis ◽  
Cell Labelling ◽  
Video Technology ◽  
Electron Microscopic ◽  
Image Capture ◽  
High Voltage Electron Microscopy ◽  
Fluorescence Studies

The development of video-enhanced light microscopy (LM) as well as associated image processing and analysis have significantly broadened the scope of investigations which can be undertaken using (LM). Interference/polarization based microscopies can provide high resolution and higher levels of “detectability” especially in unstained living systems. Confocal light microscopy also holds the promise of further improvements in resolution, fluorescence studies, and 3 dimensional reconstruction. Video technology now provides, among other things, a means to detect differences in contrast difficult to detect with the human eye; furthermore, computerized image capture, processing, and analysis can be used to enhance features of interest, average images, subtract background, and provide a quantitative basis to studies of cells, cell features, cell labelling, and so forth. Improvements in video technology, image capture, and cost-effective computer image analysis/processing have contributed to the utility and potential of the various interference and confocal microscopic instrumentation.Electron microscopic technology has made advances as well. Microprocessor control and improved design have contributed to high resolution SEMs which have imaging capability at the molecular level and can operate at a range of accelerating voltages starting at 1KV. Improvements have also been seen in the HVEM and IVEM transmission instruments. As a whole, these advances in LM and EM microscopic technology provide the biologist with an array of information on structure, composition, and function which can be obtained from a single specimen. Corrrelative light microscopic analysis permits examination of living specimens and is critical where the “history” of a cell, cellular components, or labels needs to be known up to the time of chemical or physical fixation. Features such as cytoskeletal elements or gold label as small as 0.01 μm, well below the 0.2 μm limits of LM resolution, can be “detected” and their movement followed by VDIC-LM. Appropriate identification and preparation can then lead to the examination of surface detail and surface label with stereo LV-HR-SEM. Increasing the KV in the HR-SEM while viewing uncoated or thinly coated specimens can provide information from beneath the surface as well as increasing Z contrast so that positive identification of surface and subsurface colloidal gold or other heavy metal labelled/stained material is possible. Further examination of the same cells using stereo HVEM or IVEM provides information on internal ultrastructure and on the relationship of labelled material to cytoskeletal or organellar distribution, A wide variety of investigations can benefit from this correlative approach and a number of instrumentational configurations and preparative pathways can be tailored for the particular study. For a surprisingly small investment in time and technique, it is often possible to clear ambiguities or questions that arise when a finding is presented in the context of only one modality.

Case Studies of Brittle Interfacial Failures in Area Array Solder Interconnects

2000 ◽  
Author(s):  
George M. Wenger ◽  
Richard J. Coyle ◽  
Patrick P. Solan ◽  
John K. Dorey ◽  
Courtney V. Dodd ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Failure Modes ◽  
Electroless Nickel ◽  
Electrical Performance ◽  
Printed Wiring Board ◽  
Solder Interconnects ◽  
Area Array ◽  
Surface Finishes ◽  
Soldering Reaction

Abstract A common pad finish on area array (BGA or CSP) packages and printed wiring board (PWB) substrates is Ni/Au, using either electrolytic or electroless deposition processes. Although both Ni/Au processes provide flat, solderable surface finishes, there are an increasing number of applications of the electroless nickel/immersion gold (ENi/IAu) surface finish in response to requirements for increased density and electrical performance. This increasing usage continues despite mounting evidence that Ni/Au causes or contributes to catastrophic, brittle, interfacial solder joint fractures. These brittle, interfacial fractures occur early in service or can be generated under a variety of laboratory testing conditions including thermal cycling (premature failures), isothermal aging (high temperature storage), and mechanical testing. There are major initiatives by electronics industry consortia as well as research by individual companies to eliminate these fracture phenomena. Despite these efforts, interfacial fractures associated with Ni/Au surface finishes continue to be reported and specific failure mechanisms and root cause of these failures remains under investigation. Failure analysis techniques and methodologies are crucial to advancing the understanding of these phenomena. In this study, the scope of the fracture problem is illustrated using three failure analysis case studies of brittle interfacial fractures in area array solder interconnects. Two distinct failure modes are associated with Ni/Au surface finishes. In both modes, the fracture surfaces appear to be relatively flat with little evidence of plastic deformation. Detailed metallography, scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDX), and an understanding of the metallurgy of the soldering reaction are required to avoid misinterpreting the failure modes.

Submicron Simultaneous IR and Raman Spectroscopy (IR+Raman): Breakthrough Developments in Optical Photothermal IR (O-PTIR) Combined for Enhanced Failure Analysis

2019 ◽  
Author(s):  
Jay Anderson ◽  
Mustafa Kansiz ◽  
Michael Lo ◽  
Curtis Marcott
Keyword(s):  
Raman Spectroscopy ◽  
Failure Analysis ◽  
Data Quality ◽  
Raman Spectra ◽  
Spatial Resolution ◽  
Far Field ◽  
Field Mode ◽  
Microscopic Scale ◽  
Analytical Tools ◽  
Ir And Raman

Abstract Failure analysis of organics at the microscopic scale is an increasingly important requirement, with traditional analytical tools such as FTIR and Raman microscopy, having significant limitations in either spatial resolution or data quality. We introduce here a new method of obtaining Infrared microspectroscopic information, at the submicron level in reflection (far-field) mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. This novel combination of these two correlative techniques can be considered to be complimentary and confirmatory, in which the IR confirms the Raman result and vice-versa, to yield more accurate and therefore more confident organic unknowns analysis.

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

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