scholarly journals Controlled Growth of CdS Nanostep Structured Arrays to Improve Photoelectrochemical Performance

2020 ◽  
Vol 8 ◽  
Author(s):  
Jiangang Jiang ◽  
He Wang ◽  
Hongchang An ◽  
Guangyuan Du
Keyword(s):  
Tin Oxide ◽  
Energy Conversion Efficiency ◽  
Photoelectrochemical Cells ◽  
X Ray Diffraction ◽  
Reaction Parameters ◽  
Photoelectrochemical Performance ◽  
New Approach ◽  
Phase Purity ◽  
X Ray ◽  
Straight Rod

CdS nanostep-structured arrays were grown on F-doped tin oxide-coated glasses using a two-step hydrothermal method. The CdS arrays consisted of a straight rod acting as backbone and a nanostep-structured morphology on the surface. The morphology of the samples can be tuned by varying the reaction parameters. The phase purity, morphology, and structure of the CdS nanostep-structured arrays were characterized by X-ray diffraction and field emission scanning electron microscopy. The light and photoelectrochemical properties of the samples were estimated by a UV-Vis absorption spectrum and photoelectrochemical cells. The experimental results confirmed that the special nanostep structure is crucial for the remarkable enhancement of the photoelectrochemical performance. Compared with CdS rod arrays, the CdS nanostep-structured arrays showed increased absorption ability and dramatically improved photocurrent and energy conversion efficiency. This work may provide a new approach for improving the properties of photoelectrodes in the future.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Surfactant involved in Copper Sulfide Nanocrystallites Synthesis

2009 ◽  
Vol 59 (12) ◽  
Author(s):  
Claudia Maria Simonescu ◽  
Valentin Serban Teodorescu ◽  
Camelia Capatina
Keyword(s):  
Copper Sulfide ◽  
X Ray Diffraction ◽  
Reaction Parameters ◽  
Reaction Conditions ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Shape Of Nanoparticles ◽  
Tem Transmission Electron Microscopy ◽  
Shape And Size

This paper presents the obtaining of copper sulfide CuS (covelite) from Cu(CH3COO)2.H2O and thioacetamide (TAA) system. The reaction was conducted in presence or absence of sodium-bis(2-ethylhexyl) sulfosuccinate (Na-AOT). The effects of various reaction parameters on the size and on the shape of nanoparticles have been examined. CuS obtained was characterized by X ray diffraction, IR spectroscopy, TEM � transmission electron microscopy and SAED selected area electron diffraction. The influence of surfactant to the shape and size of CuS (covellite) nanocrystals was established. The size of the nanocrystals varied from 10-60 nm depending on the reaction conditions such as quantity of surfactant.

Gallium-containing Heusler phases ScRh2Ga, ScPd2Ga, TmRh2Ga and LuRh2Ga – magnetic and solid state NMR-spectroscopic characterization

2017 ◽  
Vol 72 (8) ◽  
pp. 609-615
Author(s):  
Lukas Heletta ◽  
Stefan Seidel ◽  
Christopher Benndorf ◽  
Hellmut Eckert ◽  
Rainer Pöttgen
Keyword(s):  
Solid State ◽  
Solid State Nmr ◽  
Spectroscopic Characterization ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Phase Purity ◽  
X Ray ◽  
Arc Melting ◽  
Pauli Paramagnetism

AbstractThe gallium-containing Heusler phases ScRh2Ga, ScPd2Ga, TmRh2Ga and LuRh2Ga have been synthesized by arc-melting of the elements followed by different annealing sequences to improve phase purity. The samples have been studied by powder X-ray diffraction. The structures of Lu0.97Rh2Ga1.03 (Fm3̅m, a=632.94(5) pm, wR2=0.0590, 46 F2 values, seven variables) and Sc0.88Rh2Ga1.12 (a=618.91(4) pm, wR2=0.0284, 44 F2 values, six variables) have been refined from single crystal X-ray diffractometer data. Both gallides show structural disorder through Lu/Ga and Sc/Ga mixing. Temperature dependent magnetic susceptibility measurements showed Pauli paramagnetism for ScRh2Ga, ScPd2Ga, and LuRh2Ga and Curie-Weiss paramagnetism for TmRh2Ga. 45Sc and 71Ga solid state MAS NMR spectroscopic investigations of the Sc containing compounds confirmed the site mixing effects typically observed for Heusler phases. The data indicate that the effect of mixed Sc/Ga occupancy is significantly stronger in ScRh2Ga than in ScPd2Ga.

Phase Development and Dielectric Properties of 0.98BaTiO3-0.02Ba (Mg1/3Nb2/3) O3 Ceramic

2011 ◽  
Vol 700 ◽  
pp. 58-62
Author(s):  
Rachanusorn Roongtao ◽  
Supagorn Rugmai ◽  
Wanwilai C. Vittayakorn
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Factor ◽  
X Ray Diffraction ◽  
Phase Purity ◽  
X Ray ◽  
Phase Development ◽  
Scanning Electron

The 0.98BaTiO3-0.02Ba (Mg1/3Nb2/3) O3ceramics has been synthesized through a conventional mixed-oxide by using BT nanopowder and BMN micropowder. The phase purity of the powders and the ceramics was examined using X-ray diffraction (XRD). The 0.98BT-0.02BMN powders were sintered to 92% of the theoretical density at a temperature of 1300 °C for 2 h. The microstructure of the sintered surface was investigated using scanning electron microscopy (SEM). The dielectric constant (εr) and loss factor (tanδ) of the sintered pellets at Curie temperture were 3000 and 0.015, respectively.

scholarly journals Exploiting superspace to clarify vacancy and Al/Si ordering in mullite

IUCrJ ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 497-509 ◽  
Author(s):  
Paul Benjamin Klar ◽  
Iñigo Etxebarria ◽  
Gotzon Madariaga
Keyword(s):  
Density Functional ◽  
X Ray Diffraction ◽  
Intrinsic Structure ◽  
Functional Theory ◽  
New Approach ◽  
X Ray ◽  
Vacancy Ordering ◽  
Harmonic Modulation ◽  
First Time

Synchrotron single-crystal X-ray diffraction has revealed diffuse scattering alongside sharp satellite reflections for different samples of mullite (Al4+2xSi2−2xO10−x). Structural models have been developed in (3+1)-dimensional superspace that account for vacancy ordering and Al/Si ordering based on harmonic modulation functions. A constraint scheme is presented which explains the crystal-chemical relationships between the split sites of the average structure. The modulation amplitudes of the refinements differ significantly by a factor of ∼3, which is explained in terms of different degrees of ordering,i.e.vacancies follow the same ordering principle in all samples but to different extents. A new approach is applied for the first time to determine Al/Si ordering by combining density functional theory with the modulated volumes of the tetrahedra. The presence of Si–Si diclusters indicates that the mineral classification of mullite needs to be reviewed. A description of the crystal structure of mullite must consider both the chemical composition and the degree of ordering. This is of particular importance for applications such as advanced ceramics, because the physical properties depend on the intrinsic structure of mullite.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

scholarly journals Time-resolved XRD experiments for a fine description of mechanisms induced during reactive sintering

2005 ◽  
Vol 37 (1) ◽  
pp. 27-34 ◽  
Author(s):  
S. Paris ◽  
E. Gaffet ◽  
D. Vrel ◽  
D. Thiaudiere ◽  
M. Gailhanou ◽  
...  
Keyword(s):  
Reactive Sintering ◽  
X Ray Diffraction ◽  
Reaction Parameters ◽  
Time Resolved ◽  
X Ray ◽  
Synthesis Conditions ◽  
Nanostructure Materials ◽  
Synchrotron Beam ◽  
The One

The control of Mechanically Activated Field Activated Pressure Assisted Synthesis hereafter called the MAFAPAS process is the main objective to be achieved for producing nanostructure materials with a controlled consolidation level. Consequently, it was essential to develop characterization tools "in situ" such as the Time Resolved X-ray Diffraction (TRXRD), with an X-ray synchrotron beam (H10, LURE Orsay) coupled to an infrared thermography to study simultaneously structural transformations and thermal evolutions. From the 2003 experiments, we took the opportunity to modify the sample-holder in order to reproduce the better synthesis conditions of the MAFAPAS process, but without the consolidation step. The versatility of the setup has been proved and could even be enhanced by the design of new sample holders. In addition, this work clearly shows that this equipment will allow, on the one hand, to make progress of the understanding of MAFAPAS mechanisms and, on the other hand, to adjust reaction parameters (mechanical activation and combustion synthesis) for producing many materials with an expected microstructure.

scholarly journals Screen Printing Strategy for Investigation of Spectrophotometric Properties of Modified Thick Films of Zirconium Oxide (ZrO2): Tin Oxide (SnO2) Composites

2021 ◽  
Vol 37 (5) ◽  
pp. 1117-1124
Author(s):  
R. M. Nikam ◽  
A. P. Patil ◽  
K. H. Kapadnis ◽  
A. D. Ahirrao ◽  
R.Y. Borse
Keyword(s):  
Tin Oxide ◽  
Integrated Circuit ◽  
Zirconium Oxide ◽  
Screen Printing ◽  
Thick Films ◽  
Ultra Violet ◽  
Spectrophotometric Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hybrid Integrated Circuit

There are numerous methods has been investigated and developed for the preparation of thin and thick films. Thick film technology is utilized for the production of electronic devices like surface mount devices, in the preparation of hybrid integrated circuit, in the formulation of heating elements, in the construction of integrated passive devices and sensors. Pure tin oxide (SnO2) and composite 1%, 3%, 5%, 7% and 9 % zirconium oxide (ZrO2) thick films of dimensions 2 cm×1 cm incorporated into pure tin oxide (SnO2) were prepared with standard screen printing method. All samples were fabricated on glass support. The thick films were subjected to drying and firing at 5000C at 5 hours in muffle furnace. Thick films of tin oxide (SnO2) and composite 1%, 3%, 5%, 7% and 9 % zirconium oxide (ZrO2) incorporated into pure tin oxide (SnO2) were checked for Scanning Electron Microscopy (S.E.M), Energy Dispersive X-ray Spectroscopy (E.D.A.X), X-ray diffraction (X.R.D), Fourier Transform infra-Red (F.T.I.R) and Ultra-Violet-Visible spectroscopy (U.V) for surface morphology, elemental analysis, crystalline phases of films, vibrational and spectrophotometric study respectively. In this research paper the spectrophotometric parameters such as absorbance and absorption coefficient with pure and compositional thick films were a part of investigation and surveillance.

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