scholarly journals Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors

2020 ◽  
Vol 10 (1) ◽  
pp. 348 ◽  
Author(s):  
Donggeun You ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Kwonsang Han ◽  
Hyunwoo Heo ◽  
...  
Keyword(s):  
Low Noise ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Cmos Process ◽  
Frequency Noise ◽  
Readout Circuit ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Chopper Stabilization ◽  
Total Power Consumption

This paper presents a low-noise reconfigurable sensor readout circuit with a multimodal sensing chain for voltage/current/resistive/capacitive microsensors such that it can interface with a voltage, current, resistive, or capacitive microsensor, and can be reconfigured for a specific sensor application. The multimodal sensor readout circuit consists of a reconfigurable amplifier, programmable gain amplifier (PGA), low-pass filter (LPF), and analog-to-digital converter (ADC). A chopper stabilization technique was implemented in a multi-path operational amplifier to mitigate 1/f noise and offsets. The 1/f noise and offsets were up-converted by a chopper circuit and caused an output ripple. An AC-coupled ripple rejection loop (RRL) was implemented to reduce the output ripple caused by the chopper. When the amplifier was operated in the discrete-time mode, for example, the capacitive-sensing mode, a correlated double sampling (CDS) scheme reduced the low-frequency noise. The readout circuit was designed to use the 0.18-µm complementary metal-oxide-semiconductor (CMOS) process with an active area of 9.61 mm2. The total power consumption was 2.552 mW with a 1.8-V supply voltage. The measured input referred noise in the voltage-sensing mode was 5.25 µVrms from 1 Hz to 200 Hz.

scholarly journals Noise-Cancelling CMOS Active Inductor and Its Application in RF Band-Pass Filter Design

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Santosh Vema Krishnamurthy ◽  
Kamal El-Sankary ◽  
Ezz El-Masry
Keyword(s):  
Filter Design ◽  
Low Noise ◽  
Total Power ◽  
Active Inductor ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Noise Cancelling ◽  
Total Power Consumption ◽  
Band Pass

A CMOS active inductor with thermal noise cancelling is proposed. The noise of the transistor in the feed-forward stage of the proposed architecture is cancelled by using a feedback stage with a degeneration resistor to reduce the noise contribution to the input. Simulation results using 90 nm CMOS process show that noise reduction by 80% has been achieved. The maximum resonant frequency and the quality factor obtained are 3.8 GHz and 405, respectively. An RF band-pass filter has been designed based on the proposed noise cancelling active inductor. Tuned at 3.46 GHz, the filter features total power consumption of 1.4 mW, low noise figure of 5 dB, and IIP3 of −10.29 dBm.

LOW-POWER, LOW-VOLTAGE, DUAL-OUTPUT, SECOND GENERATION CURRENT CONVEYOR AND ITS APPLICATION IN LOW-PASS FILTER DESIGN

2013 ◽  
Vol 22 (06) ◽  
pp. 1350044 ◽  
Author(s):  
MOHAMMAD HOSSEIN MAGHAMI ◽  
AMIR M. SODAGAR
Keyword(s):  
Second Generation ◽  
Current Conveyor ◽  
The Body ◽  
Total Power ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Silicon Area ◽  
Total Power Consumption ◽  
Low Pass

A new simple dual-output second generation current conveyor (DO-CCII) circuit is proposed. Designed in a standard 0.5-μm CMOS process, the circuit operates at ±1.5 V supply voltages with a total power consumption of 106 nW. Main characteristics of the proposed DO-CCII are its simplicity, small silicon area consumption, and not suffering from the body effect of MOS transistors. The proposed circuit is employed to implement a first-order low-pass filter with upper -3 dB cut-off frequency of as low as 3.2 Hz.

scholarly journals A Potentiostat Readout Circuit with a Low-Noise and Mismatch-Tolerant Current Mirror Using Chopper Stabilization and Dynamic Element Matching for Electrochemical Sensors

2021 ◽  
Vol 11 (18) ◽  
pp. 8287
Author(s):  
Kyeongsik Nam ◽  
Gyuri Choi ◽  
Hyungseup Kim ◽  
Mookyoung Yoo ◽  
Hyoungho Ko
Keyword(s):  
Electrochemical Sensors ◽  
Low Noise ◽  
Cmos Process ◽  
Frequency Noise ◽  
Current Mirror ◽  
Readout Circuit ◽  
Dynamic Element Matching ◽  
Chopper Stabilization ◽  
Cascode Current Mirror ◽  
Dynamic Element

This paper presents a potentiostat readout circuit with low-noise and mismatch-tolerant current mirror using chopper stabilization and dynamic element matching (DEM) for electrochemical sensors. Current-mode electrochemical sensors are widely used to detect the blood glucose and viruses in the diagnosis of various diseases such as diabetes, hyperlipidemia, and the H5N1 avian influenza virus (AIV). Low-noise and mismatch-tolerant characteristics are essential for sensing applications that require high reliability and high sensitivity. To achieve these characteristics, a proposed potentiostat readout circuit is implemented using the chopper stabilization scheme and the DEM technique. The proposed potentiostat readout circuit consists of a chopper-stabilized programmable gain transimpedance amplifier (TIA), gain-boosted cascode current mirror, and a control amplifier (CA). The chopper scheme, which is implemented in the TIA and CA, can reduce low frequency noise components, such as 1/f noise, and can obtain low-noise levels. The mismatch offsets of the cascode current mirror can be reduced by the DEM operation. The proposed current-mirror-based potentiostat readout circuit is designed using a standard 0.18 μm CMOS process and can measure the sensor current from 350 nA to 2.8 μA. The input-referred noise integrated from 0.1 Hz to 1 kHz is 21.7 pARMS, and the power consumption was 287.9 μW with a 1.8 V power supply.

scholarly journals A Low-Power, Low-Noise, Resistive-Bridge Microsensor Readout Circuit with Chopper-Stabilized Recycling Folded Cascode Instrumentation Amplifier

2021 ◽  
Vol 11 (17) ◽  
pp. 7982
Author(s):  
Gyuri Choi ◽  
Hyunwoo Heo ◽  
Donggeun You ◽  
Hyungseup Kim ◽  
Kyeongsik Nam ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Readout Circuit ◽  
Output Stage ◽  
Current Feedback ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Folded Cascode

In this paper, a low-power and low-noise readout circuit for resistive-bridge microsensors is presented. The chopper-stabilized, recycling folded cascode current-feedback instrumentation amplifier (IA) is proposed to achieve the low-power, low-noise, and high-input impedance. The chopper-stabilized, recycling folded cascode topology (with a Monticelli-style, class-AB output stage) can enhance the overall noise characteristic, gain, and slew rate. The readout circuit consists of a chopper-stabilized, recycling folded cascode IA, low-pass filter (LPF), ADC driving buffer, and 12-bit successive-approximation-register (SAR) analog-to-digital converter (ADC). The prototype readout circuit is implemented in a standard 0.18 µm CMOS process, with an active area of 12.5 mm2. The measured input-referred noise at 1 Hz is 86.6 nV/√Hz and the noise efficiency factor (NEF) is 4.94, respectively. The total current consumption is 2.23 μA, with a 1.8 V power supply.

scholarly journals A Two-Module Linear Regulator with 3.9–10 V Input, 2.5 V Output, and 500 mA Load

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1143
Author(s):  
Quanzhen Duan ◽  
Weidong Li ◽  
Shengming Huang ◽  
Yuemin Ding ◽  
Zhen Meng ◽  
...  
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Input Voltage ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Silicon Area ◽  
Chip Area ◽  
Linear Regulator

A linear regulator with an input range of 3.9–10 V, 2.5 V output, and a maximal 500 mA load for use with battery systems was developed and presented here. The linear regulator featured two modules of a preregulator and a linear regulator core circuit, offering minimized power dissipation and high-level stability. The preregulator delivered an internal power voltage of 3 V and supplied internal circuits including the second module (the linear regulator core). The preregulator fitted with an active, low-pass filter provided a low-noise reference voltage to the linear regulator core circuit. To ensure operational stability for the linear regulator, error amplifiers incorporating the Miller compensation technique and featuring a large slewing rate were employed in the two modules. The circuit was successfully implemented in a 0.25 µm, 5 V complementary metal-oxide semiconductor (CMOS) process featuring 20 V drain-extended MOS (DMOS)/bipolar high-voltage devices. The total silicon area, including all pads, was approximately 1.67 mm2. To reduce chip area, bipolar rather than DMOS transistors served as the power transistors. Measured results demonstrated that the designed linear regulator was able to operate at an input voltage ranging from 3.9 to 10 V and offer a maximum 500 mA load current with fixed 2.5 V output voltage.

scholarly journals A Four-Channel Low-Noise Readout IC for Air Flow Measurement Using Hot Wire Anemometer in 0.18 μm CMOS Technology

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4694
Author(s):  
Kyeongsik Nam ◽  
Hyungseup Kim ◽  
Yongsu Kwon ◽  
Gyuri Choi ◽  
Taeyup Kim ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Air Flow ◽  
Low Noise ◽  
Cmos Process ◽  
Significant Information ◽  
Flow Measurements ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Op Amp ◽  
Noise Characteristics

Air flow measurements provide significant information required for understanding the characteristics of insect movement. This study proposes a four-channel low-noise readout integrated circuit (IC) in order to measure air flow (air velocity), which can be beneficial to insect biomimetic robot systems that have been studied recently. Instrumentation amplifiers (IAs) with low-noise characteristics in readout ICs are essential because the air flow of an insect’s movement, which is electrically converted using a microelectromechanical systems (MEMS) sensor, generally produces a small signal. The fundamental architecture employed in the readout IC is a three op amp IA, and it accomplishes low-noise characteristics by chopping. Moreover, the readout IC has a four-channel input structure and implements an automatic offset calibration loop (AOCL) for input offset correction. The AOCL based on the binary search logic adjusts the output offset by controlling the input voltage bias generated by the R-2R digital-to-analog converter (DAC). The electrically converted air flow signal is amplified using a three op amp IA, which is passed through a low-pass filter (LPF) for ripple rejection that is generated by chopping, and converted to a digital code by a 12-bit successive approximation register (SAR) analog-to-digital converter (ADC). Furthermore, the readout IC contains a low-dropout (LDO) regulator that enables the supply voltage to drive digital circuits, and a serial peripheral interface (SPI) for digital communication. The readout IC is designed with a 0.18 μm CMOS process and the current consumption is 1.886 mA at 3.3 V supply voltage. The IC has an active area of 6.78 mm2 and input-referred noise (IRN) characteristics of 95.4 nV/√Hz at 1 Hz.

CMOS Amplifier for Neural Signal Recording Applications

2015 ◽  
Vol 645-646 ◽  
pp. 1279-1284
Author(s):  
Zhang Zhang ◽  
Zheng Xi Cheng ◽  
Yi Wei Zhuang
Keyword(s):  
Low Noise ◽  
Cmos Process ◽  
Differential Mode ◽  
Neural Signal ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Voltage Range ◽  
Cmos Amplifier ◽  
Signal Recording ◽  
Neural Signal Recording

A low power low noise CMOS amplifier with integrated filter for neural signal recording is designed and fabricated with CSMC 0.5 μm CMOS process. DC offsets introduced by electrode-tissue interface are rejected through a feedback low-pass filter. The bandwidth of the amplifier is in 3.5Hz-5.5KHz range, and the gain is about 48dB in the midband. AC input differential mode voltage range is 10mV, and DC input differential mode voltage range is 180mV. The amplifier can accommodate 180mV DC offsets drift and 10mV neural spikes. The neural probe array is integrated directly on the surface of the amplifier array chip, and is tested in saline solution, and also is implanted in rats in vivo , the results of the experiments show that the amplifier is suitable for neural signal recording. The power dissipation is about 14μW while consuming 0.16 mm2 of chip area, which satisfies implantable devices requirements.

High Gain and Low Noise Single Balanced Wireless Receiver Front-End Circuit Design

2013 ◽  
Vol 284-287 ◽  
pp. 2647-2651
Author(s):  
Zhe Yang Huang ◽  
Che Cheng Huang ◽  
Jung Mao Lin ◽  
Chung Chih Hung
Keyword(s):  
Return Loss ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Total Power ◽  
Cmos Process ◽  
Chip Area ◽  
Wireless Receiver ◽  
Front End ◽  
Total Power Consumption

This paper presents a wideband wireless receiver front-end for 3.1-5.0GHz band group-1 (BG-1) WiMedia application. The front-end circuits are designed in 0.18um standard CMOS process. The experimental results show the maximum conversion power gain is 45.5dB; minimum noise figure is 2.9dB. Input return loss is lower than -9.3dB and output return loss is lower than -6.8dB. The maximum LO conversion power is 0dBm. 3dB working frequency is 1.9GHz (3.1GHz-5.0GHz) Total power consumption is 24.3mW including LNA, mixer and all buffers. Total chip area is 1.27mm2 including dummy and pads.

scholarly journals A One-Dimensional Magnetic Chip with a Hybrid Magnetosensor and a Readout Circuit

2018 ◽  
Vol 2018 ◽  
pp. 1-10
Author(s):  
Guo-Ming Sung ◽  
Hsin-Kwang Wang ◽  
Leenendra Chowdary Gunnam
Keyword(s):  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Maximum Output ◽  
Hall Voltage ◽  
Readout Circuit ◽  
Pass Filter ◽  
Low Pass Filter ◽  
One Dimensional ◽  
Macro Model

This work presents a one-dimensional magnetic chip composed of a hybrid magnetosensor and a readout circuit, which were fabricated with 0.18 μm 1P6M CMOS technology. The proposed magnetosensor includes a polysilicon cross-shaped Hall plate and two separated metal-oxide semiconductor field-effect transistors (MOSFETs) to sense the magnetic induction perpendicular to the chip surface. The readout circuit, which comprises a current-to-voltage converter, a low-pass filter, and an instrumentation amplifier, is designed to amplify the output Hall voltage with a gain of 43 dB. Furthermore, a SPICE macro model is proposed to predict the sensor’s performance in advance and to ensure sufficient comprehension of the magnetic mechanism of the proposed magnetosensor. Both simulated and measured results verify the correctness and flexibility of the proposed SPICE macro model. Measurements reveal that the maximum output Hall voltage VH, the optimum current-related magnetosensitivity SRI, the optimum voltage-related magnetosensitivity SRV, the averaged nonlinearity error NLE, and the relative bias current Ibias are 4.381 mV, 520.5 V/A·T, 40.04 V/V·T, 7.19%, and 200 μA, respectively, for the proposed 1-D magnetic chip with a readout circuit of 43 dB. The averaged NLE is small at high magnetic inductions of ±30 mT, whereas it is large at low magnetic inductions of ±30 G.

scholarly journals Design consideration in low dropout voltage regulator for batteryless power management unit

2019 ◽  
Vol 8 (4) ◽  
Author(s):  
Mohamad Khairul bin Mohd Kamel ◽  
Yan Chiew Wong
Keyword(s):  
System Development ◽  
Maximum Load ◽  
Open Loop ◽  
Low Noise ◽  
Green Technology ◽  
Voltage Regulator ◽  
Cmos Process ◽  
Process Technology ◽  
Pass Filter ◽  
Low Pass Filter

Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology.

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