scholarly journals Modification of Nanocrystalline Porous Cu2−xSe Films during Argon Plasma Treatment

2021 ◽  
Vol 11 (2) ◽  
pp. 612
Author(s):  
Sergey P. Zimin ◽  
Ildar I. Amirov ◽  
Sergey V. Vasilev ◽  
Ivan S. Fedorov ◽  
Leonid A. Mazaletskiy ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Plasma Treatment ◽  
Argon Plasma ◽  
Rf Magnetron Sputtering ◽  
Initial Structure ◽  
Inductively Coupled ◽  
Glass Substrates ◽  
Corning Glass ◽  
Ion Energies ◽  
Complex Architecture

Cu2−xSe films were deposited on Corning glass substrates by radio frequency (RF) magnetron sputtering and annealed at 300 °C for 20 min under N2 gas ambient. The films had a thickness of 850–870 nm and a chemical composition of Cu1.75Se. The initial structure of the films was nanocrystalline with a complex architecture and pores. The investigated films were plasma treated with RF (13.56 MHz) high-density low-pressure inductively coupled argon plasma. The plasma treatment was conducted at average ion energies of 25 and 200 eV for durations of 30, 60, and 90 s. Notably, changes are evident in the surface morphology, and the chemical composition of the films changed from x = 0.25 to x = 0.10 to x = 0.00, respectively, after plasma treatment at average ion energies of 25 and 200 eV, respectively.

Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940066
Author(s):  
S. P. Zimin ◽  
A. S. Pipkova ◽  
L. A. Mazaletskiy ◽  
I. I. Amirov ◽  
E. S. Gorlachev ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Thermal Evaporation ◽  
Argon Plasma ◽  
Film Surface ◽  
Indium Sulfide ◽  
Thermal Evaporation Method ◽  
Inductively Coupled ◽  
Glass Substrates ◽  
Argon Ions ◽  
Metallic Droplets

Modification of indium sulfide (In2S3) film surface was performed by the treatment in high-density low-pressure inductively coupled argon plasma. The films with thickness of 500–800[Formula: see text]nm were fabricated on glass substrates by the thermal evaporation method and subsequent annealing in sulfur ambience. The plasma treatment of as-grown and annealed films was carried out with argon ions having the energy of 25–200[Formula: see text]eV. Nanostructuring of the film surface took place resulting in the formation of arrays of nanosized indium droplets.

Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940064
Author(s):  
S. P. Zimin ◽  
L. A. Mazaletskiy ◽  
I. I. Amirov ◽  
E. S. Gorlachev ◽  
V. F. Gremenok ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Argon Plasma ◽  
Geometrical Parameters ◽  
Treatment Results ◽  
Ion Energy ◽  
Surface Nanostructuring ◽  
Inductively Coupled ◽  
Glass Substrates ◽  
Nanostructure Arrays ◽  
Low Energy Ions

We report on surface nanostructuring of Cu(In,Ga)Se2 (CIGS) films using inductively coupled argon plasma treatment with the ion energy of 25–30[Formula: see text]eV within 30–120[Formula: see text]s. The films were fabricated on glass substrates using the selenization method and had a polycrystalline structure. We demonstrate that the plasma treatment results in the formation of tip-shaped nanostructure arrays with the geometrical parameters controlled by the treatment duration. The features of the surface nanostructuring using low energy ions are discussed.

Sputtering rates of lead chalcogenide-based ternary solid solutions during inductively coupled argon plasma treatment

2011 ◽  
Vol 26 (10) ◽  
pp. 105003 ◽  
Author(s):  
S P Zimin ◽  
E S Gorlachev ◽  
I I Amirov ◽  
H Zogg ◽  
E Abramof ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Solid Solutions ◽  
Argon Plasma ◽  
Lead Chalcogenide ◽  
Inductively Coupled

Electrical and Optical Properties of Indium and Aluminium Doped Zinc Oxide Films Prepared by RF Magnetron Sputtering

2011 ◽  
Vol 194-196 ◽  
pp. 2272-2275 ◽  
Author(s):  
Lu Ting Yan ◽  
Jatin Rath ◽  
Rudd Schropp
Keyword(s):  
Magnetron Sputtering ◽  
Elevated Temperatures ◽  
Light Transmission ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Heater Temperature ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Corning Glass ◽  
Different Temperatures

ZnO: In (IZO, 10wt % In2O3) and ZnO: Al (AZO, 1wt % Al2O3) films were deposited on Corning glass substrates by RF magnetron sputtering. The samples were either prepared on unheated substrates and post annealed in N2 at different temperatures, or prepared at elevated temperatures. Electrical, optical and structural properties were investigated as a function of deposition temperature and annealing temperature. Increasing the substrate heater temperature would lead to a decline in the electrical conductivity of IZO films, while AZO films showed unchanged performance in the substrate heater temperature range of 150 - 300°C. Post annealing appears to be an effective way to improve the electrical properties of both IZO and AZO films without sacrificing transparency. In this work, AZO films have higher conductivity and light transmission than IZO films.

scholarly journals NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Savita Sharma ◽  
Monika Tomar ◽  
Nitin K. Puri ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Glass Substrates ◽  
Corning Glass ◽  
Interdigital Electrodes ◽  
Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

Surface Treatment of Polystyrene Films with Inductively Coupled Plasma System

2008 ◽  
Vol 55-57 ◽  
pp. 753-756 ◽  
Author(s):  
R. Nakhowong ◽  
Toemsak Srikhirin ◽  
Tanakorn Osotchan
Keyword(s):  
Contact Angle ◽  
Plasma Treatment ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Moisture Absorption ◽  
Treatment Time ◽  
Argon Plasma ◽  
Contact Angles ◽  
Inductively Coupled ◽  
Before And After

The surface of polystyrene (PS) thin films in argon plasma was modified to study the hydrophilicity properties. An inductively coupled plasma (ICP) system was used to generate the argon plasma. In the experiment, the effect of RF power levels, gas flow rate and treatment time was investigated. The surface morphology of PS films was examined by the atomic force microscopy (AFM), also the contact angle goniometry was used for measuring the wettability of PS films before and after plasma treatment. After the plasma treatment, AFM images of PS revealed the increasing of the surface roughness as increasing the power levels and treatment times. Moreover, after treated with argon plasma, the contact angles of polystyrene films also decrease where the power levels and treatment times were increased. It is clear that the effects of power levels and treatment time improve the wettability of PS films. It can also be observed that by placing the sample in air after plasma treatment, the contact angle gradually increases probably due to moisture absorption in the PS films.

Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors

2007 ◽  
Vol 124-126 ◽  
pp. 931-934 ◽  
Author(s):  
Badrul Munir ◽  
Rachmat Adhi Wibowo ◽  
Eun Soo Lee ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Corning Glass ◽  
Stage Process ◽  
Elemental Layer ◽  
Selenization Process

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

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