scholarly journals Hydrogenated Graphene Based Organic Thin Film Transistor Sensor for Detection of Chloride Ions as Corrosion Precursors

2022 ◽  
Vol 12 (2) ◽  
pp. 863
Author(s):  
Mounia Chakik ◽  
Siziwe Bebe ◽  
Ravi Prakash
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Environmental Factors ◽  
Low Cost ◽  
Chloride Ions ◽  
Functionalized Graphene ◽  
Organic Thin Film ◽  
Surface Wetness ◽  
Hydrogenated Graphene ◽  
Monitoring Protocols

Corrosion monitoring and management has been at the center of structural health monitoring protocols due to its damaging effects on metallic structures. Current corrosion prevention and management programs often fail to include environmental factors such as Cl− ions and surface wetness. Early detection of these environmental factors can prevent the onset of corrosion and reduce repair and maintenance-related expenses. There is growing interest in creating solution-processed thin film environmental sensors with high sensitivity to corrosion precursors, low-cost fabrication, and small footprint, rendering them viable candidates for investigation as potential corrosion sensors that could be easily integrated into existing structures and screen printed or patterned directly into surface coatings. In this work, we have implemented C60-based n-type organic thin film transistors (OTFTs) with functionalized graphene oxide for humidity sensing and functionalized graphene nanoparticles for Cl− ion detection, using low-cost solution processing techniques. The reduced graphene oxide (rGO)-coated OTFT humidity sensor is designed for the qualitative estimation of surface moisture levels and high levels of humidity, and it exhibits a relative responsivity for dry to surface wetness transition of 122.6% to surface wetness, within a response time of 20 ms. We furthermore implemented an in-house synthesized hydrogenated graphene coating in conjunction with a second OTFT architecture for Cl− ions sensing which yielded a sensitivity of 4%/ppm to ultrafine ionic concentrations, over an order of magnitude lower than the range identified to cause corrosion in aircraft structures.

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

New tailored organic semiconductors thin films for optoelectronic applications

2021 ◽  
Author(s):  
Dinesh Pathak ◽  
Sanjay Kumar ◽  
Sonali Andotra ◽  
Jibin Thomas ◽  
Navneet Kaur ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Organic Semiconductors ◽  
Low Cost ◽  
Organic Thin Film ◽  
Vis Spectroscopy ◽  
Carbon Based

In this study, we have investigated new tailored organic semiconductors materials for the optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin-films are suitable and cheaper than inorganic thin-film. The band gap of organic semiconductors materials can be tuned and mostly lies between 2.0eV to 4eV and the optical absorption edge of organic semiconductors typically lies in between 1.7eV to 3eV. They can be easily tailored by modifying the carbon chain and legends and looks promising for engineering the band gap to harness solar spectrum. In this work, with new tailored organic semiconductors the solution route is explored which is low cost processing method. (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline thin-films are processed by spin coating method with changing concentration such as 0.05 wt% and 0.08 wt%. Thin films of Organic semiconductors were prepared on glass substrate and annealed at 55°C. The structural and optical behaviour of (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline organic semiconductors thin films is studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Visible Spectroscopy technique. The XRD data of synthesized sample suggests the Nano crystallinity of the Organic layers. The SEM micrographs shows the dense packing when we increase the wt% 0.05 to 0.08. Analysis of the optical absorption measurements found that the engineered band gap of synthesized thin films are 2.18eV, 2.35eV, 2.36eV, 2.52eV and 2.65eV which suggest suitability for applications of Optoelectronic devices such as solar cell. Such light weight, eco-friendly and disposable new carbon based materials seems to have potential to replace other traditional hazardous heavy materials for future eco-friendly flat fast electronics. Keywords: Thin-film, solar cell, tailored organic semiconductors, XRD, SEM, UV-Vis spectroscopy.

Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation

2015 ◽  
Vol 1107 ◽  
pp. 514-519
Author(s):  
Umar Faruk Shuib ◽  
Khairul Anuar Mohamad ◽  
Afishah Alias ◽  
Tamer A. Tabet ◽  
Bablu K. Gosh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Mobility Model ◽  
Channel Length ◽  
Analytical Models ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Transistor

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

scholarly journals Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1871-1876 ◽  
Author(s):  
Chen Jiang ◽  
Hanbin Ma ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Low Cost ◽  
Organic Thin Film Transistors ◽  
Operating Voltage ◽  
Wearable Electronics ◽  
Organic Thin Film ◽  
Large Area ◽  
Mechanical Bending

Abstract:All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (<3 V), small subthreshold slope (128 mV/decade), good mobility (0.1 cm2 V−1 s−1), close-to-zero threshold voltage (−0.16 V), and high on/off ratio (>105). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

scholarly journals Enhancing the performance of thin-film nanocomposite nanofiltration membranes using MAH-modified GO nanosheets

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54898-54910 ◽  
Author(s):  
Quanling Xie ◽  
Wenyao Shao ◽  
Shishen Zhang ◽  
Zhuan Hong ◽  
Qiuquan Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Maleic Anhydride ◽  
Interfacial Polymerization ◽  
Water Flux ◽  
Functionalized Graphene ◽  
Nanofiltration Membranes ◽  
Functionalized Graphene Oxide ◽  
Salt Rejection ◽  
Thin Film Nanocomposite

In this work, novel thin-film nanocompostie NF membranes were developed through modification with maleic anhydride functionalized graphene oxideviainterfacial polymerization, which showed the enhanced water flux with retaining high salt rejection.

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