scholarly journals Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 204 ◽  
Author(s):  
Rainald Mientus ◽  
Michael Weise ◽  
Stefan Seeger ◽  
Rene Heller ◽  
Klaus Ellmer

By reactive magnetron sputtering from a ceramic SnO2:Ta target onto unheated substrates, X-ray amorphous SnO:Ta films were prepared in gas mixtures of Ar/O2(N2O, H2O). The process windows, where the films exhibit the lowest resistivity values, were investigated as a function of the partial pressure of the reactive gases O2, N2O and H2O. We found that all three gases lead to the same minimum resistivity, while the width of the process window is broadest for the reactive gas H2O. While the amorphous films were remarkably conductive (ρ ≈ 5 × 10−3 Ωcm), the films crystallized by annealing at 500 °C exhibit higher resistivities due to grain boundary limited conduction. For larger film thicknesses (d ≳ 150 nm), crystallization occurs already during the deposition, caused by the substrate temperature increase due to the energy influx from the condensing film species and from the plasma (ions, electrons), leading to higher resistivities of these films. The best amorphous SnO2:Ta films had a resistivity of lower than 4 × 10−3 Ωcm, with a carrier concentration of 1.1 × 1020 cm−3, and a Hall mobility of 16 cm2/Vs. The sheet resistance was about 400 Ω/□ for 100 nm films and 80 Ω/□ for 500 nm thick films. The average optical transmittance from 500 to 1000 nm is greater than 76% for 100 nm films, where the films, deposited with H2O as reactive gas, exhibit even a slightly higher transmittance of 80%. These X-ray amorpous SnO2:Ta films can be used as low-temperature prepared transparent and conductive protection layers, for instance, to protect semiconducting photoelectrodes for water splitting, and also, where appropriate, in combination with more conductive TCO films (ITO or ZnO).

2011 ◽  
Vol 18 (05) ◽  
pp. 189-195 ◽  
Author(s):  
Q. L. HUANG ◽  
L. FANG ◽  
H. B. RUAN ◽  
B. D. GUO ◽  
F. WU ◽  
...  

A series of Zn 1-x Mg x O (x = 0 ~ 0.16) films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap (Eg) has linear relationship with Mg content: Eg = 1.67x + 3.274 (eV) (0 < x < 0.16). The resistivity of the films increases with the increase of Mg content. The Raman spectra of the films show that the position of E2 peaks (473 cm-1) has not changed, but the A1(LO) mode (577 cm-1) frequency shifts to lower wavenumbers with the increase of Mg content, indicating that Mg -doping does not cause intensive lattice deformation, but results in the decrease of the carrier concentration, which is corresponding to the degradation of the conductivity of ZnMgO films with the increase of Mg content.


2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.


2015 ◽  
Vol 1131 ◽  
pp. 8-11 ◽  
Author(s):  
Thitikorn Boonkoom ◽  
Kittipong Tantisantisom ◽  
Jedsada Manyam

We examined structural properties of nitrogen doped (ZnO:N) thin films prepared by reactive RF magnetron sputtering technique in conjunction with gas timing method. The deposited films were polycrystalline ZnO in wurtzite structure. Morphology of the ZnO:N films could be modified by adjusting gas timing conditions. The x-ray photoelectron spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) analysis showed that incorporation of nitrogen may cause structural distortion in the ZnO:N crystal.


2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.


2015 ◽  
Vol 75 (7) ◽  
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie @ Mani ◽  
Lam Mui Li ◽  
Saafie Salleh ◽  
Afishah Alias ◽  
...  

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %. 


2019 ◽  
Vol 372 ◽  
pp. 442-450 ◽  
Author(s):  
I. Cosme ◽  
S. Vázquez-y-Parraguirre ◽  
O. Malik ◽  
S. Mansurova ◽  
N. Carlos ◽  
...  

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.


2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.


2003 ◽  
Vol 769 ◽  
Author(s):  
E. Fortunato ◽  
A. Gonçalves ◽  
A. Marques ◽  
V. Assunção ◽  
I. Ferreira ◽  
...  

AbstractHighly transparent and conductive ZnO:Ga thin films were produced by rf magnetron sputtering at room temperature on polyethylene naphthalate substrates. The films present a good electrical and optical stability, surface uniformity and a very good adhesion to the polymeric substrates. The lowest resistivity obtained was 5×10-4 Ωcm with a sheet resistance of 15 Ω/sqr and an average optical transmittance in the visible part of the spectra of 80 %. It was also shown that by passivating the polymeric surface with a thin SiO2 layer, the electrical and structural properties of the films are improved nearly by a factor of 2.


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