scholarly journals Combination of Zinc Oxide and Antimony Doped Tin Oxide Nanocoatings for Glazing Application

Coatings ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 248 ◽  
Author(s):  
Benjamin Schumm ◽  
Thomas Abendroth ◽  
Saleh A. Alajlan ◽  
Ahmed M. Almogbel ◽  
Holger Althues ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Tin Oxide ◽  
Near Infrared ◽  
Glass Production ◽  
Float Glass ◽  
Building Envelope ◽  
Visible Range ◽  
Production Processes

Multilayered nanocoatings allow outstanding properties with broad potential for glazing applications. Here, we report on the development of a multilayer nanocoating for zinc oxide (ZnO) and antimony doped tin oxide (ATO). The combination of ZnO and ATO thin films with their promising optical properties is a cost-efficient alternative for the production of energy-efficient glazing. It is an effective modification of the building envelope to reduce current high domestic demand of electrical power for air conditioning, especially in hot climates like Saudi Arabia. In this paper, we report the development of a nanocoating based on the combination of ZnO and ATO. Principle material and film investigations were carried out on lab-scale by dip coating with chemical solution deposition (CSD), while with regard to production processes, chemical vapor deposition (CVD) processes were evaluated in a second stage of the film development. It was found that with both processes, high-quality thin films and multilayer coatings with outstanding optical properties can be prepared. While keeping the optical transmission in the visible range at around 80%, only 10% of the NIR (near infrared) and below 1% of UV (ultraviolet) light passes these coatings. However, in contrast to CSD, the CVD process allows a free combination of the multilayer film sequence, which is of high relevance for production processes. Furthermore, it can be potentially integrated in float glass production lines.

Electrical Properties of Indium-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

2015 ◽  
Vol 1109 ◽  
pp. 593-597
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method

This project has been focused on the electrical and optical properties on the effect of Indium doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different In dopant concentrations at 1 at%, 1.5 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. In doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% In doping concentration which is 8.27× 103Ωcm-1The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

Electrical Properties of Tin-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

2015 ◽  
Vol 1109 ◽  
pp. 577-581 ◽  
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Sn Doping ◽  
Glass Substrates ◽  
Coating Method

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 103Ωcm-1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

2013 ◽  
Vol 667 ◽  
pp. 511-515 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Doping Concentration ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

Electrical Properties of Undoped Zinc Oxide Nanostructures at Different Annealing Temperature

2015 ◽  
Vol 1109 ◽  
pp. 572-576
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates ◽  
Coating Method

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 oC, 450 oC, 500 oC, and 550 oC.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 oC which its resistivity is 5.36 × 104Ωcm-1. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Tailoring the optical properties of tin oxide thin films via gamma irradiation

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ateyyah M. Al-Baradi ◽  
Ahmed A. Atta ◽  
Ali Badawi ◽  
Saud A. Algarni ◽  
Abdulraheem S. A. Almalki ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Spectrum ◽  
Gamma Irradiation ◽  
Tin Oxide ◽  
Free Charge Carrier ◽  
Oxide Thin Films ◽  
Dispersion Parameters ◽  
Absorption Spectrum Fitting ◽  
Spectrum Fitting

Abstract In the current work, the optical properties of tin oxide thin films have been tailored via gamma irradiation for energy applications. The effect of Gamma radiation (50, 100, 150, 200 and 250 kGy) on the microstructural, absorption and oscillator parameters of SnO2 thin films has been investigated. XRD results reveal that the SnO2 films have the symmetry of the space group P42/mnm belonging to the tetragonal system. The crystallite size of γ-irradiated SnO2 thin film slightly increases as the irradiation dose increases. The allowed optical band gaps are estimated by applying various methods such as Tauc’s method, derivation of absorption spectrum fitting and absorption spectrum fitting approaches. The dispersion parameters are extracted from the dispersion curve of the real part of the refractive index. The single-effective-oscillator and Drude models for free charge carrier absorption are applied to obtain the dispersion parameters before and after γ-irradiation.

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