scholarly journals Hybrid Cross Coupled Differential Pair and Colpitts Quadrature Digitally Controlled Oscillator Architecture

Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1132
Author(s):  
Igor Butryn ◽  
Krzysztof Siwiec ◽  
Witold Adam Pleskacz

Growing importance of wireless communication systems forces reduction of power consumption of the designed integrated circuits. The paper focuses on minimization of power consumption in a digitally controlled oscillator (DCO) that can be employed as oscillator in GPS/Galileo receiver. The new hybrid architecture of DCO combines good phase noise performance of a Colpitts oscillator and relaxed startup conditions of a cross-coupled differential pair oscillator. The proposed new DCO generates a quadrature signal in a current reused frequency divider. Such solution allows of the dissipated power to be reduced. The DCO has been implemented in 110 nm CMOS technology. It generates output signal in frequency range from 1.52 GHz to 1.6 GHz and consumes 1.1 mW from 1.5 V supply voltage. The measured phase noise equals −116 dBc/Hz at 1 MHz offset from 1.575 GHz output signal.

2021 ◽  
Vol 11 (3) ◽  
pp. 1059
Author(s):  
Min-Su Kim ◽  
Sang-Sun Yoo

This paper presents an optimum layout method of a low-power, digitally controlled oscillator (DCO) for a Bluetooth low-energy (BLE) transceiver in a 4G/5G LTE system. For the optimal LC-based DCO layout, three different layouts, including different gm cell locations and an Al metal layer, were implemented, and performance was compared and verified for BLE application. The implemented neck DCO (NDCO), where the gm cell is located in the neck of the main inductor, showed superior performance compared to other layouts in terms of low phase noise and low power consumption. The designed NDCO had a low phase noise of −116.1 dBc/Hz at 1 MHz with a 0.5 mW power consumption. The supply voltage and oscillation frequency range were 0.8 V and 4.7–5.7 GHz, respectively, and the NDCO designed with the optimal layout had a good figure-of-merit of −192.6 dBc/Hz.


2017 ◽  
Vol 26 (11) ◽  
pp. 1750184 ◽  
Author(s):  
Qiuzhen Wan ◽  
Jun Dong ◽  
Hui Zhou ◽  
Fei Yu

In this paper, a very low power modified current-reused quadrature voltage-controlled oscillator (QVCO) is proposed with the back-gate coupling technique for the quadrature signal generation. By stacking switching transistors in series like a cascode, the modified current-reused QVCO can be constructed in a totem-pole manner to reuse the dc biasing current and lower the power consumption. By utilizing the back-gates of switching transistors as coupling terminals to achieve the quadrature outputs, the back-gate coupled QVCO improves the phase noise and reduces the power consumption compared to the conventional coupling transistor based topology. Together with the modified current-reuse and back-gate coupling techniques, the proposed QVCO can operate at reduced supply voltage and power consumption while maintaining remarkable circuit performance in terms of low phase noise and wide tuning range. With a dc power of 1.6[Formula: see text]mW under a 0.8[Formula: see text]V supply voltage, the simulation results show the tuning range of the QVCO is from 2.36 to 3.04[Formula: see text]GHz as the tuning voltage is varied from 0.8 to 0.0[Formula: see text]V. The phase noise is [Formula: see text]118.3[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset frequency from the carrier frequency of 2.36[Formula: see text]GHz and the corresponding figure-of-merit of the QVCO is [Formula: see text]183.7[Formula: see text]dBc/Hz.


2020 ◽  
Vol 35 (9) ◽  
pp. 1059-1063 ◽  
Author(s):  
Wen-Cheng Lai ◽  
Sheng-Lyang Jang

An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.


Sensors ◽  
2020 ◽  
Vol 20 (18) ◽  
pp. 5309
Author(s):  
Shengbiao An ◽  
Shuang Xia ◽  
Yue Ma ◽  
Arfan Ghani ◽  
Chan Hwang See ◽  
...  

Analogue-to-digital converters (ADC) using oversampling technology and the Σ-∆ modulation mechanism are widely applied in digital audio systems. This paper presents an audio modulator with high accuracy and low power consumption by using a discrete second-order feedforward structure. A 5-bit successive approximation register (SAR) quantizer is integrated into the chip, which reduces the number of comparators and the power consumption of the quantizer compared with flash ADC-type quantizers. An analogue passive adder is used to sum the input signals and it is embedded in a SAR ADC composed of a capacitor array and a dynamic comparator which has no static power consumption. To validate the design concept, the designed modulator is developed in a 180 nm CMOS process. The peak signal to noise distortion ratio (SNDR) is calculated as 106 dB and the total power consumption of the chip is recorded as 3.654 mW at the chip supply voltage of 1.8 V. The input sine wave of 0 to 25 kHz is sampled at a sampling frequency of 3.2 Ms/s. Moreover, the results achieve a 16-bit effective number of bits (ENOB) when the amplitude of the input signal is varied between 0.15 and 1.65 V. By comparing with other modulators which were realized by a 180 nm CMOS process, the proposed architecture outperforms with lower power consumption.


2016 ◽  
Vol 21 (1) ◽  
pp. 67-77
Author(s):  
Vasilis Kolios ◽  
Konstantinos Giannakidis ◽  
Grigorios Kalivas

Abstract The over 5 GHz available spectral space allocated worldwide around the 60 GHz band, is very promising for very high data rate wireless short-range communications. In this article we present two key components for the 60 GHz front-end of a transceiver, in 130 nm RF CMOS technology: a single-balanced mixer with high Conversion Gain (CG), reduced Noise Figure (NF) and low power consumption, and an LC cross-coupled Voltage Controlled Oscillator (VCO) with very good linearity, with respect to Vctrl, and very low Phase Noise (PN). In both circuits, custom designed inductors and a balun structure for the mixer are employed, in order to enhance their performance. The VCO’s inductor achieves an inductance of 198 pH and a quality factor (Q) of 30, at 30 GHz. The balun shows less than 1o Phase Imbalance (PI) and less than 0.2 dB Amplitude Imbalance (AI), from 57 to 66 GHz. The mixer shows a CG greater than 15 dB and a NF lower than 12 dB. In addition, the VCO achieves a Phase Noise lower than -106 dBc/Hz at 1 MHz offset, and shows great linearity for the entire band. Both circuits are biased with a 1.2 V supply voltage and the total power consumption is about 10.6 mW for the mixer and 10.92 mW for the VCO.


Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1377
Author(s):  
Duo Sheng ◽  
Wei-Yen Chen ◽  
Hao-Ting Huang ◽  
Li Tai

This paper presents a digitally controlled oscillator (DCO) with a low-complexity circuit structure that combines multiple delay circuits to achieve a high timing resolution and wide output frequency range simultaneously while also significantly reducing the overall power consumption. A 0.18 µm complementary metal–oxide–semiconductor standard process was used for the design, and measurements showed that the chip had a minimum controllable timing resolution of 4.81 ps and power consumption of 142 µW with an output signal of 364 MHz. When compared with other designs using advanced processes, the proposed DCO demonstrated the best power-to-frequency ratio. Therefore, it can output a signal at the required frequency more efficiently in terms of power consumption. Additionally, because the proposed DCO uses digital logic gates only, a cell-based design flow can be implemented. Hence, the proposed DCO is not only easy to implement in different processes but also easy to integrate with other digital circuits.


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