scholarly journals Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 106 ◽  
Author(s):  
Ivan Pisarenko ◽  
Eugeny Ryndin
Keyword(s):  
Numerical Simulation ◽  
Integrated Circuits ◽  
High Speed ◽  
Carrier Transport ◽  
Optoelectronic Devices ◽  
Analytical Models ◽  
Technological Parameters ◽  
Drift Diffusion ◽  
Construction Methods ◽  
Applied Software

In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.

scholarly journals The Effect of Initial Cooling Temperature on Deformation of U75V Heavy Rail after Cooling

2011 ◽  
Vol 2-3 ◽  
pp. 667-672 ◽  
Author(s):  
Ming Xin Gao ◽  
Hao Jia ◽  
Juan Juan Jiang ◽  
Pei Long Wang ◽  
Hua Song ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
High Speed ◽  
Reference Value ◽  
Cooling Process ◽  
Technological Parameters ◽  
Stress Couple ◽  
Cooling Temperature ◽  
Section Size ◽  
Couple Method ◽  
Heavy Rail

The initial cooling temperature has important effect on the bending change and section size of rolled heavy rail, when rolled heavy rail is on the cooling bed for natural cooling. In the paper, the heat-stress couple method is adopted to carry on numerical simulation to cooling process of 60kg/m U75V heavy rail, and we has obtained the bending change value and section size of rolled heavy rail in different initial cooling temperature. The study is of great reference value on the design of cooling bed which is for hundred-meter high speed heavy rail and the formulation of cooling technological parameters.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Numerical simulation of high-speed civil transport inlet operability with angle of attack

AIAA Journal ◽  
1998 ◽  
Vol 36 ◽  
pp. 1223-1229
Author(s):  
Ge-Cheng Zha ◽  
Doyle Knight ◽  
Donald Smith ◽  
Martin Haas
Keyword(s):  
Numerical Simulation ◽  
High Speed ◽  
Angle Of Attack

The Radio Probe™: A New Measurement Tool for High Speed Integrated Circuits

2005 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Attenuation Factor ◽  
Cost Effective ◽  
Frequency Measurement ◽  
Single Frequency ◽  
Measurement Tool ◽  
Probe Design ◽  
Differential Measurement

Abstract This article presents a novel tool designed to allow circuit node measurements in a radio frequency (RF) integrated circuit. The discussion covers RF circuit problems; provides details on the Radio Probe design, which achieves an input impedance of 50Kohms and an overall attenuation factor of 0 dB; and describes signal to noise issues in the output signal, along with their improvement techniques. This cost-effective solution incorporates features that make it well suited to the task of differential measurement of circuit nodes within an RF IC. The Radio Probe concept offers a number of advantages compared to active probes. It is a single frequency measurement tool, so it complements, rather than replaces, active probes.

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