scholarly journals Nonlinear Dynamics, Switching Kinetics and Physical Realization of the Family of Chua Corsage Memristors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 369
Author(s):  
Zubaer Ibna Mannan ◽  
Hyongsuk Kim

This article reviews the nonlinear dynamical attributes, switching kinetics, bifurcation analysis, and physical realization of a family of generic memristors, namely, Chua corsage memristors (CCM). CCM family contains three 1-st order generic memristor dubbed as 2-lobe, 4-lobe, and 6-lobe Chua corsage memristors and can be distinguished in accordance with their asymptotic stable states. The 2-lobe CCM has two asymptotically stable equilibrium states and regarded as a binary memory device. In contrast, the versatile 4-lobe CCM and 6-lobe CCM are regarded as a multi-bit-per-cell memory device as they exhibit three and four asymptotic stable states, respectively, on their complex and diversified dynamic routes. Due to the diversified dynamic routes, the CC memristors exhibit a highly nonlinear DC V-I curve. Unlike most published highly-nonlinear DC V-I curves with several disconnected branches, the DC V-I curves of CCMs are contiguous along with a locally active negative slope region. Moreover, the DC V-I curves and parametric representations of the CCMs are explicitly analytical. Switching kinetics of the CCM family can be demonstrated with universal formulas of exponential state trajectories xn(t), time period tfn, and applied minimum pulse amplitude VA and width Δw. These formulas are regarded universal as they can be applied to any piecewise linear dynamic routes for any DC or pulse input and with any number of segments. When local activity, and bifurcation and chaos theorems are employed, CMMs exhibit unique stable limit cycles spawn from a supercritical Hopf bifurcation along with static attractors. In addition, the nonlinear circuit and system theoretic approach is applied to explain the asymptotic stability behavior of CCMs and to design real memristor emulators using off-the-shelf circuit components.

Complexity ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-21 ◽  
Author(s):  
Zubaer I. Mannan ◽  
Changju Yang ◽  
Shyam P. Adhikari ◽  
Hyongsuk Kim

A novel generic memristor, dubbed the 6-lobe Chua corsage memristor, is proposed with its nonlinear dynamical analysis and physical realization. The proposed corsage memristor contains four asymptotically stable equilibrium points on its complex and diversified dynamic routes which reveals a 4-state nonlinear memory device. The higher degree of versatility of its dynamic routes reveal that the proposed memristor has a variety of dynamic paths in response to different initial conditions and exhibits a highly nonlinear contiguous DC V-I curve. The DC V-I curve of the proposed memristor is endowed with an explicit analytical parametric representation. Moreover, the derived three formulas, exponential trajectories of state xnt, time period tfn, and minimum pulse amplitude VA, are required to analyze the movement of the state trajectories on the piecewise linear (PWL) dynamic route map (DRM) of the corsage memristor. These formulas are universal, that is, applicable to any PWL DRM curves for any DC or pulse input and with any number of segments. Nonlinear dynamics and circuit and system theoretic approach are employed to explain the asymptotic quad-stable behavior of the proposed corsage memristor and to design a novel real memristor emulator using off-the-shelf circuit components.


2021 ◽  
Vol 31 (07) ◽  
pp. 2150104
Author(s):  
Cuicui Jiang ◽  
Yongxin Zhang ◽  
Wendi Wang

In this paper, a p53-Mdm2 mathematical model is analyzed to understand the biological implications of feedback loops in a p53 system. Results show that the model can undergo four types of codimension-3 Bogdanov–Takens bifurcations, including cusp, saddle, focus and elliptic. Specifically, we find new phenomena including the coexistence of four positive equilibria, two limit cycles, the coexistence of three stable states (two stable equilibria and one stable limit cycle, or three stable equilibria), a heteroclinic loop enclosing a smaller stable limit cycle and a larger stable limit cycle. These findings extend the understanding of the complex dynamics of the p53 system, and can provide some potential biological applications.


Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 315 ◽  
Author(s):  
Sobia Ali Khan ◽  
Geun Ho Lee ◽  
Chandreswar Mahata ◽  
Muhammad Ismail ◽  
Hyungjin Kim ◽  
...  

In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the cross-point array structure than the BRS mode due to more nonlinear I–V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.


2006 ◽  
Vol 937 ◽  
Author(s):  
Eric Yeow Howee Teo ◽  
Qidan Ling ◽  
Yan Song ◽  
Yoke Ping Tan ◽  
Wen Wang ◽  
...  

ABSTRACTRecently, several studies have been done by various groups to understand the memory effects behind organic materials, which include understanding in terms of conformation changes, conjugation modification and oxidation-reduction process. In this paper, a WORM (write-once read-many times) memory device using a new polymer material 2-(9H-carbazol-9-yl)ethyl methacrylate (PCz) containing carbazole donor group has been demonstrated. The device uses a MIM (metal-insulator-metal) structure with ITO coated glass as bottom electrode, the synthesized polymer material PCz as the active layer and Al as the top electrode. The toluene solution of PCz was spin-coated on the ITO, followed by solvent removal in a vacuum chamber. Finally, Al was thermally evaporated through shadow mask onto the PCz film.The memory effect of PCz was observed in the I-V characteristic of the MIM structure. The as-fabricated device is found to be in its OFF state, and can be programmed to ON state which is not reversible. The WORM device exhibits a high ON/OFF current ratio of up to 106, and shows a good retention time for both the ON and OFF states which can be sustained within a 24 h timeframe, and extrapolated to sustain for another 10 years. The effect of continuous read pulse on the ON and OFF states was evaluated and no resistance degradation is observed for read cycles up to 107 times. By comparing the electrical characteristics of PCz and PVK as well as their optimized geometry simulation corresponding to their minimized energy states, the memory effect or bi-stable states of PCz can be attributed to the long linker between the carbazole groups and backbone present in PCz which play a part in the conduction mechanism.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3004
Author(s):  
Sae-Wan Kim ◽  
JinBeom Kwon ◽  
Jae-Sung Lee ◽  
Byoung-Ho Kang ◽  
Sang-Won Lee ◽  
...  

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al2O3/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al2O3) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 103. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.


2020 ◽  
Author(s):  
Yi Li ◽  
Sam Avis ◽  
Junbo Chen ◽  
Guangfu Wu ◽  
Teng Zhang ◽  
...  

Abstract Reconfigurable three-dimensional (3D) structures that can reversibly change their geometries and thereby their functionalities are promising for a wide range of applications. Despite intensive studies, the lack of fundamental understanding of the highly nonlinear multistable states existing in these structures has significantly hindered the development of reconfigurable systems that can realize rapid, well-controlled shape change. Herein we present a systematic, integrated experimental and computational study to control and tailor the multistable states of 3D structures and their reconfiguration paths. Our energy landscape analysis using a discrete shell model and minimum energy pathway methods leads to design maps for a controlled number of stable states by varying geometry and material parameters, and energy-efficient reconfiguration paths among the multistable states. Concurrently, our experiments show that 3D structures assembled from ferromagnetic composite thin films of diverse geometries can be rapidly reconfigured among their multistable states, with the number of stable states and reconfigurable paths in excellent agreement with computational predictions. In addition, we demonstrate a wide breadth of applications including reconfigurable 3D light emitting systems, remotely- controlled release of particles/drugs from a reconfigurable structure, and 3D structure arrays that can form desired patterns following the written path of a magnetic “pen”. Our results represent a critical step towards the rational design and development of well-controlled, rapidly and remotely reconfigurable structures for many applications.


Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 451
Author(s):  
Byeongjeong Kim ◽  
Chandreswar Mahata ◽  
Hojeong Ryu ◽  
Muhammad Ismail ◽  
Byung-Do Yang ◽  
...  

Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.


Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


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