Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.

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Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Nanomaterials ◽

10.3390/nano10030457 ◽

2020 ◽

Vol 10 (3) ◽

pp. 457 ◽

Cited By ~ 4

Author(s):

Lei Wu ◽

Hongxia Liu ◽

Jinfu Lin ◽

Shulong Wang

Keyword(s):

Thermal Annealing ◽

High Performance ◽

Electrical Characteristic ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Before And After ◽

Retention Characteristics

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

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The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

MRS Proceedings ◽

10.1557/opl.2014.792 ◽

2014 ◽

Vol 1691 ◽

Cited By ~ 1

Author(s):

Ryosuke Ogata ◽

Masataka Yoshihara ◽

Naohiro Murayama ◽

Satoru Kishida ◽

Kentaro Kinoshita

Keyword(s):

Grain Boundary ◽

Room Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Influence Of Water ◽

Retention Characteristics ◽

Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

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Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

Applied Physics Letters ◽

10.1063/1.2339032 ◽

2006 ◽

Vol 89 (10) ◽

pp. 103509 ◽

Cited By ~ 187

Author(s):

K. Kinoshita ◽

T. Tamura ◽

M. Aoki ◽

Y. Sugiyama ◽

H. Tanaka

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Random Access ◽

Random Access Memory ◽

Transition Metal Oxide ◽

Resistive Random Access Memory ◽

Dependent Data ◽

Data Retention ◽

Access Memory

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A Survey of ReRAM-Based Architectures for Processing-In-Memory and Neural Networks

Machine Learning and Knowledge Extraction ◽

10.3390/make1010005 ◽

2018 ◽

Vol 1 (1) ◽

pp. 75-114 ◽

Cited By ~ 33

Author(s):

Sparsh Mittal

Keyword(s):

Machine Learning ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Low Energy ◽

Power Budget ◽

Access Memory ◽

Computing Systems ◽

Data Movement ◽

Similarities And Differences

As data movement operations and power-budget become key bottlenecks in the design of computing systems, the interest in unconventional approaches such as processing-in-memory (PIM), machine learning (ML), and especially neural network (NN)-based accelerators has grown significantly. Resistive random access memory (ReRAM) is a promising technology for efficiently architecting PIM- and NN-based accelerators due to its capabilities to work as both: High-density/low-energy storage and in-memory computation/search engine. In this paper, we present a survey of techniques for designing ReRAM-based PIM and NN architectures. By classifying the techniques based on key parameters, we underscore their similarities and differences. This paper will be valuable for computer architects, chip designers and researchers in the area of machine learning.

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Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5054983 ◽

2019 ◽

Vol 37 (1) ◽

pp. 012202 ◽

Cited By ~ 6

Author(s):

Eduardo Perez ◽

Mamathamba K. Mahadevaiah ◽

Cristian Zambelli ◽

Piero Olivo ◽

Christian Wenger

Keyword(s):

High Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Accelerated Tests ◽

Data Retention ◽

Access Memory ◽

Memory Arrays

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Enhanced Switching Stability in Forming-Free SiN x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

Advanced Electronic Materials ◽

10.1002/aelm.201800739 ◽

2018 ◽

Vol 5 (2) ◽

pp. 1800739 ◽

Cited By ~ 4

Author(s):

Peng Fei Jiang ◽

Hai Xia Gao ◽

Mei Yang ◽

Zhen Fei Zhang ◽

Xiao Hua Ma ◽

...

Keyword(s):

Low Power ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Switching Stability

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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Electronics ◽

10.3390/electronics10030272 ◽

2021 ◽

Vol 10 (3) ◽

pp. 272

Author(s):

Guodu Han ◽

Yanning Chen ◽

Hongxia Liu ◽

Dong Wang ◽

Rundi Qiao

Keyword(s):

Random Access ◽

Resistive Random Access Memory ◽

Light Transmittance ◽

Electrical Characteristics ◽

Data Retention ◽

Access Memory ◽

Reset Voltage ◽

Retention Characteristic ◽

Visible Light Range ◽

Application Potential

Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al2O3/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO3/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO3 layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.

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