scholarly journals Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3362 ◽  
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Epitaxial Layers ◽  
Extended Defects ◽  
Experimental Activity ◽  
Transmission Electron ◽  
Testing Chamber ◽  
Process Viability

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 1 h as well as P and Al implanted samples annealed at 1650 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

4H-SiC MOSFET Source and Body Laser Annealing Process

2020 ◽  
Vol 1004 ◽  
pp. 705-711
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Surface Roughening ◽  
Dopant Activation ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Recovery Technique ◽  
Lattice Damage

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

Tem Investigation of Hydrogen Implanted and Laser Annealed Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
P. Zheng ◽  
R.G. Saint-Jacques ◽  
B. Terreault ◽  
G. Veilleux
Keyword(s):  
Structural Damage ◽  
Laser Annealing ◽  
Bubble Formation ◽  
Laser Pulses ◽  
Hydrogen Gas ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Means Of Transmission

AbstractIn order to explain the relatively easy laser-induced desorption of hydrogen implanted in silicon, and particularly the lower temperature needed for desorption at higher implantation energy, the microstructural modifications produced by laser pulses were studied by means of transmission electron microscopy. The structural damage, such as defect clusters and hydrogen gas bubbles was observed. In the case of low dose implantation (H/Si ≤ 15&), most of the bubbles were produced during laser annealing rather than during implantation. This bubble formation in the course of desorption explains the higher temperature needed. When blisters are already present on the as-implanted surface, desorption starts at a lower temperature.

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

2008 ◽  
Vol 600-603 ◽  
pp. 611-614 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Annealing Process ◽  
Extended Defects ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Activation Annealing ◽  
Shallow Groove

Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

scholarly journals Influence of the Interface Composition to the Superconductivity of Ti/PdAu Films

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Xiaolong Xu ◽  
Mauro Rajteri ◽  
Jinjin Li ◽  
Shuo Zhang ◽  
Jian Chen ◽  
...  
Keyword(s):  
Transition Edge Sensor ◽  
Energy Dispersive Spectrometer ◽  
Annealing Process ◽  
Bilayer Film ◽  
Superconducting Transition ◽  
Infiltration Process ◽  
Interface Composition ◽  
Transition Edge ◽  
Transmission Electron ◽  
Function Unit

In this work, the interface composition of the superconducting Ti/PdAu bilayer is tuned by an annealing process in N2 from 100 to 500 °C to control the superconducting transition temperature (Tc). This Ti-PdAu composition layer is characterized with a high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) to show the infiltration process. The surface topography, electrical, and cryogenic properties are also shown. The inter-infiltration of Ti and PdAu induced by the thermal treatments generates an intermixed layer at the interface of the bilayer film. Due to the enforced proximity effect by the annealing process, the Tc of Ti (55 nm)/PdAu (60 nm) bilayer thin films is tuned from an initial value of 243 to 111 mK which is a temperature that is suitable for the application as the function unit of a superconducting transition edge sensor.

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

Laser annealing of defects in CdTe epitaxial layers

1985 ◽  
Vol 72 (1-2) ◽  
pp. 246-251 ◽  
Author(s):  
D.J. As ◽  
L. Palmetshofer
Keyword(s):  
Laser Annealing ◽  
Epitaxial Layers

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

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